GB1422381A - Photoconductive target for an image pickup tube - Google Patents
Photoconductive target for an image pickup tubeInfo
- Publication number
- GB1422381A GB1422381A GB2932373A GB2932373A GB1422381A GB 1422381 A GB1422381 A GB 1422381A GB 2932373 A GB2932373 A GB 2932373A GB 2932373 A GB2932373 A GB 2932373A GB 1422381 A GB1422381 A GB 1422381A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- type
- type layer
- content
- crystallization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 abstract 4
- 238000002425 crystallisation Methods 0.000 abstract 2
- 230000008025 crystallization Effects 0.000 abstract 2
- 230000008020 evaporation Effects 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 238000001228 spectrum Methods 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- 229910052718 tin Inorganic materials 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
Landscapes
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
- Light Receiving Elements (AREA)
Abstract
1422381 Image pick-up tubes HITACHI Ltd and NIPPON HOSO KYOKAI 20 June 1973 [3 July 1972] 29323/73 Headings H1D and H1K A photoconductive target of an image pick-up tube e.g. a vidicon, includes, in sequence, a light-transmitting substrate, e.g. glass, an N-type conductive layer, and a P- type conductive layer forming a rectifying contact therewith, the P-type layer including at least Se and Te and having a composition which varies through its thickness such that the average content of Se is not less than 50 atomic per cent, the content of Te at the two surfaces of the layer is not more than 10 atomic per cent, and the maximum Te content of 10 to 40% lies in a plane which is to the N-type layer side of the mid-plane of the P-type layer. The P-type layer may also contain one or more of As, Sb, P, Bi, Ge, and Si, to reduce the speed of crystallization, and may have its free surface coated with a 1000 Angstrom thick evaporated layer of Sb 2 S 3 , As 2 Se 3 , or As 2 S 2 , to reduce electron beam landing disturbance arising from secondary emission. The controlled variation of composition may be produced either by simultaneously evaporating the separate components from different evaporation boats and adjusting the different rates of evaporation, or by evaporating the different components in cyclic succession to build up a multiple sandwich of thin layers. The N-type layer either be formed wholly of the oxide of Sn, In, or Ti, or-to further assist in the reduction in the speed of crystallization of the P-type layer-may be of CdS, CdSe, ZnS, or ZnSe, in which case a higher conductivity layer, to act as an electrode is also required. This high conductivity layer may either be an oxide layer of Sn, In, or Ti, or a transparent metal layer evaporated on to the substrate. The target provides increased sensitivity to the red portion of the spectrum.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP47059514A JPS5230091B2 (en) | 1972-07-03 | 1972-07-03 | |
| US370446A US3890525A (en) | 1972-07-03 | 1973-06-15 | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1422381A true GB1422381A (en) | 1976-01-28 |
Family
ID=26400561
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2932373A Expired GB1422381A (en) | 1972-07-03 | 1973-06-20 | Photoconductive target for an image pickup tube |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3890525A (en) |
| FR (1) | FR2237307B1 (en) |
| GB (1) | GB1422381A (en) |
| NL (1) | NL158019B (en) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5246772B2 (en) * | 1973-05-21 | 1977-11-28 | ||
| JPS5530657B2 (en) * | 1974-06-14 | 1980-08-12 | ||
| JPS5419128B2 (en) * | 1974-06-21 | 1979-07-12 | ||
| JPS51120611A (en) * | 1975-04-16 | 1976-10-22 | Hitachi Ltd | Photoconducting film |
| NL7805418A (en) * | 1978-05-19 | 1979-11-21 | Philips Nv | TAKING TUBE. |
| NL7805417A (en) * | 1978-05-19 | 1979-11-21 | Philips Nv | TAKING TUBE. |
| FR2441264A1 (en) * | 1978-11-08 | 1980-06-06 | Hitachi Ltd | RADIATION SENSITIVE SCREEN |
| NL7902838A (en) * | 1979-04-11 | 1980-10-14 | Philips Nv | RECORDING TUBE. |
| JPS5832454B2 (en) * | 1979-06-07 | 1983-07-13 | 日本放送協会 | photoconductive target |
| JPS56132750A (en) * | 1980-03-24 | 1981-10-17 | Hitachi Ltd | Photoelectric converter and manufacture |
| JPS57197876A (en) * | 1981-05-29 | 1982-12-04 | Nippon Hoso Kyokai <Nhk> | Photoconductive film |
| JPH0648616B2 (en) * | 1984-05-21 | 1994-06-22 | 株式会社日立製作所 | Photoconductive film |
| JPS61193337A (en) * | 1985-02-20 | 1986-08-27 | Hitachi Ltd | Image pickup tube target |
| JPS62223951A (en) * | 1986-03-26 | 1987-10-01 | Hitachi Ltd | Photoconductive film |
| JP2686266B2 (en) * | 1988-01-28 | 1997-12-08 | 株式会社日立製作所 | Manufacturing method of light receiving element |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3350595A (en) * | 1965-11-15 | 1967-10-31 | Rca Corp | Low dark current photoconductive device |
| US3346755A (en) * | 1966-03-31 | 1967-10-10 | Rca Corp | Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials |
-
1973
- 1973-06-15 US US370446A patent/US3890525A/en not_active Expired - Lifetime
- 1973-06-20 GB GB2932373A patent/GB1422381A/en not_active Expired
- 1973-07-02 FR FR7324257A patent/FR2237307B1/fr not_active Expired
- 1973-07-02 NL NL7309190.A patent/NL158019B/en not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| NL158019B (en) | 1978-09-15 |
| FR2237307A1 (en) | 1975-02-07 |
| US3890525A (en) | 1975-06-17 |
| NL7309190A (en) | 1974-01-07 |
| DE2333283A1 (en) | 1974-01-31 |
| FR2237307B1 (en) | 1977-05-13 |
| DE2333283B2 (en) | 1976-05-06 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PE20 | Patent expired after termination of 20 years |
Effective date: 19930619 |