GB1311404A - Photoelectric conductor devices - Google Patents

Photoelectric conductor devices

Info

Publication number
GB1311404A
GB1311404A GB3858971A GB3858971A GB1311404A GB 1311404 A GB1311404 A GB 1311404A GB 3858971 A GB3858971 A GB 3858971A GB 3858971 A GB3858971 A GB 3858971A GB 1311404 A GB1311404 A GB 1311404A
Authority
GB
United Kingdom
Prior art keywords
selenide
layer
cadmium
selenium
sulphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3858971A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1311404A publication Critical patent/GB1311404A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36Photoelectric screens; Charge-storage screens
    • H01J29/39Charge-storage screens
    • H01J29/45Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233Manufacture of photoelectric screens or charge-storage screens

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Light Receiving Elements (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)

Abstract

1311404 Image pick-up tubes; phoioconductive devices TOKYO SHIBAURA ELECTRIC CO Ltd 17 Aug 1971 [17 Aug 1970] 38589/71 Headings H1D and H1K A photoconductive target comprises a first layer comprising photoconductive cadmium selenide, a second layer comprising a cadmium salt of an oxy-acid, and a high resistance third layer comprising a compound other than cadmium selenide. Typically the layers are deposited in the above order on a nesa glass signal electrode. The first layer may consist of CdSe which is substantially pure or doped with copper, silver, gold, indium, gallium, aluminium, halogens, tellurium antimony, bismuth, lead, tin, or alkali or alkaline earth metals. The second layer, which is preferably less than 2000 Š thick, may consist of the cadmium salt of selenious acid with or without an admixture of cadmium oxide, while suitable materials for the third layer, which may consist of a number of sublayers, are one or more of zinc sulphide, arsenic dier tri-sulphide, arsenic tri-selenide, germanium selenide, thallium sulphide or selenide, bismuth trisulphide or selenide, zinc selenide, cadmium telluride and antimony trisulphide or selenide. For solid state scanning the target may be additionally provided with strip electrodes on the third layer and for improved resolution the signal electrode may also be divided into strips. The targets exhibit lower dark currents varying less with ageing while retaining the sensitivity of known targets. A typical target is made by first vacuum depositing CdSe, then heating it for 15 minutes at 600‹ C, in nitrogen, for 30 minutes at 500‹ C. in Se vapour, and then heating in nitrogen containing oxygen and selenium vapour and cooling rapidly to form the selenious acid salt. Finally zinc sulphide is vacuum deposited to a thickness of 0À1 Á. Alternatively, after deposition the cadmium selenide is heated at 500‹ C. for 10- 50 minutes in nitrogen containing oxygen and selenium and the oxygen and selenium content reduced to zero while cooling rapidly. In this case the third layer is arsenic triselenide vacuum deposited to a thickness of 0À4 Á. Another way of forming the cadmium salt is by heating the selenide layer to 300‹ C. in the presence of selenium dioxide. A single crystal slice of the selenide may be stuck to the nesa glass in place of the deposited layer.
GB3858971A 1970-08-17 1971-08-17 Photoelectric conductor devices Expired GB1311404A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP45071392A JPS4830193B1 (en) 1970-08-17 1970-08-17

Publications (1)

Publication Number Publication Date
GB1311404A true GB1311404A (en) 1973-03-28

Family

ID=13459185

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3858971A Expired GB1311404A (en) 1970-08-17 1971-08-17 Photoelectric conductor devices

Country Status (7)

Country Link
US (1) US3816787A (en)
JP (1) JPS4830193B1 (en)
CA (1) CA922421A (en)
DE (1) DE2141233B2 (en)
FR (1) FR2112921A1 (en)
GB (1) GB1311404A (en)
NL (1) NL161613C (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA995989A (en) * 1972-10-12 1976-08-31 Matsushita Electric Industrial Co., Ltd. Method for manufacturing a target for an image pickup tube
DE2452934A1 (en) * 1973-12-07 1975-06-12 Xerox Corp XEROGRAPHIC ELEMENT
US3947717A (en) * 1975-03-31 1976-03-30 Rca Corporation Photoconductor of cadmium selenide and aluminum oxide
JPS58147414U (en) * 1982-03-29 1983-10-04 チロン・ジヤパン株式会社 Accessories
JP2753264B2 (en) * 1988-05-27 1998-05-18 株式会社日立製作所 Imaging tube

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2843772A (en) * 1953-03-25 1958-07-15 Rca Corp Cathode ray tube and target
GB840763A (en) * 1955-08-17 1960-07-13 Emi Ltd Improvements in light sensitive targets
DE1614753A1 (en) * 1966-01-11 1970-12-10 Tokyo Shibaura Electric Co Photoelectric conductors
US3346755A (en) * 1966-03-31 1967-10-10 Rca Corp Dark current reduction in photoconductive target by barrier junction between opposite conductivity type materials
US3571646A (en) * 1967-07-17 1971-03-23 Tokyo Shibaura Electric Co Photoconductive target with n-type layer of cadmium selenide including cadmium chloride and cuprous chloride

Also Published As

Publication number Publication date
CA922421A (en) 1973-03-06
US3816787A (en) 1974-06-11
NL161613C (en) 1980-02-15
FR2112921A1 (en) 1972-06-23
NL161613B (en) 1979-09-17
JPS4830193B1 (en) 1973-09-18
DE2141233B2 (en) 1973-09-20
DE2141233A1 (en) 1972-02-24
NL7111347A (en) 1972-02-21

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
435 Patent endorsed 'licences of right' on the date specified (sect. 35/1949)
PCNP Patent ceased through non-payment of renewal fee