NL6616015A - - Google Patents

Info

Publication number
NL6616015A
NL6616015A NL6616015A NL6616015A NL6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A NL 6616015 A NL6616015 A NL 6616015A
Authority
NL
Netherlands
Application number
NL6616015A
Other versions
NL153377B (nl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of NL6616015A publication Critical patent/NL6616015A/xx
Publication of NL153377B publication Critical patent/NL153377B/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
    • G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
    • G03G5/08207—Selenium-based
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
    • H01J9/233—Manufacture of photoelectric screens or charge-storage screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electromagnetism (AREA)
  • Light Receiving Elements (AREA)
  • Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
NL666616015A 1965-11-15 1966-11-14 Foto-elektrische inrichting en werkwijze voor het vervaardigen daarvan. NL153377B (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US507728A US3350595A (en) 1965-11-15 1965-11-15 Low dark current photoconductive device

Publications (2)

Publication Number Publication Date
NL6616015A true NL6616015A (enrdf_load_stackoverflow) 1967-05-16
NL153377B NL153377B (nl) 1977-05-16

Family

ID=24019868

Family Applications (1)

Application Number Title Priority Date Filing Date
NL666616015A NL153377B (nl) 1965-11-15 1966-11-14 Foto-elektrische inrichting en werkwijze voor het vervaardigen daarvan.

Country Status (7)

Country Link
US (1) US3350595A (enrdf_load_stackoverflow)
JP (1) JPS4613044Y1 (enrdf_load_stackoverflow)
DE (1) DE1564544B2 (enrdf_load_stackoverflow)
FR (1) FR1501227A (enrdf_load_stackoverflow)
GB (1) GB1135460A (enrdf_load_stackoverflow)
NL (1) NL153377B (enrdf_load_stackoverflow)
SE (1) SE334539B (enrdf_load_stackoverflow)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3405298A (en) * 1965-03-04 1968-10-08 Rca Corp Photoconductive device having a target including a selenium blocking layer
US3526543A (en) * 1966-02-28 1970-09-01 Hitachi Ltd Photoconductive film
US3517241A (en) * 1966-08-31 1970-06-23 Japan Broadcasting Corp Photoconductive target comprising aluminum,selenium and arsenic triselenide layers
US3539883A (en) * 1967-03-15 1970-11-10 Ion Physics Corp Antireflection coatings for semiconductor devices
US3990894A (en) * 1969-10-29 1976-11-09 Katsuragawa Denki Kabushiki Kaisha Method of preparing photosensitive element for use in electrophotography
US3904408A (en) * 1969-11-14 1975-09-09 Canon Kk Electrophotographic member with graded tellurium content
US3922579A (en) * 1970-04-22 1975-11-25 Hitachi Ltd Photoconductive target
JPS4937862B1 (enrdf_load_stackoverflow) * 1970-12-29 1974-10-12
US3861913A (en) * 1972-03-31 1975-01-21 Ibm Electrophotographic charge generation layer
US3890524A (en) * 1972-06-27 1975-06-17 Hitachi Ltd Photo-conductive target comprising both solid and porous layers
US3890525A (en) * 1972-07-03 1975-06-17 Hitachi Ltd Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer
US3783324A (en) * 1972-09-11 1974-01-01 Rca Corp Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface
DE2248054B2 (de) * 1972-09-30 1974-12-12 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrophotographisches Aufzeichnungsmaterial
DE2305407C3 (de) * 1973-02-03 1978-04-06 Standard Elektrik Lorenz Ag, 7000 Stuttgart Elektroradiografisches Aufzeichnungsmaterial
US4126457A (en) * 1973-05-30 1978-11-21 Xerox Corporation Evaporation technique for producing high temperature photoreceptor alloys
JPS5052927A (enrdf_load_stackoverflow) * 1973-09-10 1975-05-10
US4001014A (en) * 1973-09-17 1977-01-04 Matsushita Electric Industrial Co., Ltd. Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness
US4086512A (en) * 1973-10-27 1978-04-25 U.S. Philips Corporation Camera tube employing silicon-chalcogenide target with heterojunction
DE2452934A1 (de) * 1973-12-07 1975-06-12 Xerox Corp Xerographisches element
JPS5530657B2 (enrdf_load_stackoverflow) * 1974-06-14 1980-08-12
US4103203A (en) * 1974-09-09 1978-07-25 Rca Corporation Wafer mounting structure for pickup tube
US4132918A (en) * 1975-09-15 1979-01-02 Rca Corporation Polycrystalline selenium imaging devices
US4021375A (en) * 1975-09-15 1977-05-03 Rca Corporation Method of fabricating polycrystalline selenium imaging devices
JPS5244194A (en) * 1975-10-03 1977-04-06 Hitachi Ltd Photoelectric conversion device
US4246510A (en) * 1976-01-07 1981-01-20 The United States Of America As Represented By The Secretary Of The Army Retina for pyroelectric vidicon
US4242373A (en) * 1976-02-20 1980-12-30 Hitachi, Ltd. Method for vapor depositing a cerium oxide film
JPS6051774B2 (ja) * 1976-11-17 1985-11-15 株式会社日立製作所 撮像管タ−ゲツト
NL7805418A (nl) * 1978-05-19 1979-11-21 Philips Nv Opneembuis.
NL7805417A (nl) 1978-05-19 1979-11-21 Philips Nv Opneembuis.
NL7902838A (nl) * 1979-04-11 1980-10-14 Philips Nv Opneembuis.
JPS55159445A (en) * 1979-05-31 1980-12-11 Ricoh Co Ltd Electrophotographic receptor
JPS56103477A (en) * 1980-01-21 1981-08-18 Hitachi Ltd Photoelectric conversion element

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3310700A (en) * 1964-05-28 1967-03-21 Rca Corp Photoconductive device incorporating stabilizing layers on the face of the selenium layer

Also Published As

Publication number Publication date
FR1501227A (fr) 1967-11-10
GB1135460A (en) 1968-12-04
NL153377B (nl) 1977-05-16
DE1564544A1 (de) 1970-04-30
SE334539B (enrdf_load_stackoverflow) 1971-04-26
JPS4613044Y1 (enrdf_load_stackoverflow) 1971-05-10
DE1564544B2 (de) 1971-05-19
US3350595A (en) 1967-10-31

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Legal Events

Date Code Title Description
V1 Lapsed because of non-payment of the annual fee
NL80 Information provided on patent owner name for an already discontinued patent

Owner name: RCA