GB1135460A - Photoconductive device and method - Google Patents
Photoconductive device and methodInfo
- Publication number
- GB1135460A GB1135460A GB46631/66A GB4663166A GB1135460A GB 1135460 A GB1135460 A GB 1135460A GB 46631/66 A GB46631/66 A GB 46631/66A GB 4663166 A GB4663166 A GB 4663166A GB 1135460 A GB1135460 A GB 1135460A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- photo
- selenium
- electrode
- germanium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 4
- 229910052711 selenium Inorganic materials 0.000 abstract 4
- 239000011669 selenium Substances 0.000 abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 3
- 229910052714 tellurium Inorganic materials 0.000 abstract 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052733 gallium Inorganic materials 0.000 abstract 2
- 239000011521 glass Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 239000008188 pellet Substances 0.000 abstract 2
- 229910052684 Cerium Inorganic materials 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- NVWBARWTDVQPJD-UHFFFAOYSA-N antimony(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[Sb+3].[Sb+3] NVWBARWTDVQPJD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052792 caesium Inorganic materials 0.000 abstract 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 abstract 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000004020 conductor Substances 0.000 abstract 1
- 230000007423 decrease Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052741 iridium Inorganic materials 0.000 abstract 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 229910052703 rhodium Inorganic materials 0.000 abstract 1
- 239000010948 rhodium Substances 0.000 abstract 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 abstract 1
- 150000003346 selenoethers Chemical class 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 1
- 229910001887 tin oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/36—Photoelectric screens; Charge-storage screens
- H01J29/39—Charge-storage screens
- H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
- H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
- H01J29/456—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions exhibiting no discontinuities, e.g. consisting of uniform layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/043—Photoconductive layers characterised by having two or more layers or characterised by their composite structure
- G03G5/0433—Photoconductive layers characterised by having two or more layers or characterised by their composite structure all layers being inorganic
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/20—Manufacture of screens on or from which an image or pattern is formed, picked up, converted or stored; Applying coatings to the vessel
- H01J9/233—Manufacture of photoelectric screens or charge-storage screens
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electromagnetism (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
- Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US507728A US3350595A (en) | 1965-11-15 | 1965-11-15 | Low dark current photoconductive device |
Publications (1)
Publication Number | Publication Date |
---|---|
GB1135460A true GB1135460A (en) | 1968-12-04 |
Family
ID=24019868
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB46631/66A Expired GB1135460A (en) | 1965-11-15 | 1966-10-18 | Photoconductive device and method |
Country Status (7)
Country | Link |
---|---|
US (1) | US3350595A (enrdf_load_stackoverflow) |
JP (1) | JPS4613044Y1 (enrdf_load_stackoverflow) |
DE (1) | DE1564544B2 (enrdf_load_stackoverflow) |
FR (1) | FR1501227A (enrdf_load_stackoverflow) |
GB (1) | GB1135460A (enrdf_load_stackoverflow) |
NL (1) | NL153377B (enrdf_load_stackoverflow) |
SE (1) | SE334539B (enrdf_load_stackoverflow) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
US4126457A (en) * | 1973-05-30 | 1978-11-21 | Xerox Corporation | Evaporation technique for producing high temperature photoreceptor alloys |
FR2454176A1 (fr) * | 1979-04-11 | 1980-11-07 | Philips Nv | Tube de prise de vues pour television, a blocage ameliore contre l'injection d'electrons dans la cible |
FR2458100A1 (fr) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | Materiau photoconducteur pour machine a copier electrophotographique |
US4254359A (en) | 1978-05-19 | 1981-03-03 | U.S. Philips Corporation | Camera tube with graduated concentration of tellurium in target |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3405298A (en) * | 1965-03-04 | 1968-10-08 | Rca Corp | Photoconductive device having a target including a selenium blocking layer |
US3526543A (en) * | 1966-02-28 | 1970-09-01 | Hitachi Ltd | Photoconductive film |
US3517241A (en) * | 1966-08-31 | 1970-06-23 | Japan Broadcasting Corp | Photoconductive target comprising aluminum,selenium and arsenic triselenide layers |
US3539883A (en) * | 1967-03-15 | 1970-11-10 | Ion Physics Corp | Antireflection coatings for semiconductor devices |
US3904408A (en) * | 1969-11-14 | 1975-09-09 | Canon Kk | Electrophotographic member with graded tellurium content |
US3922579A (en) * | 1970-04-22 | 1975-11-25 | Hitachi Ltd | Photoconductive target |
US3861913A (en) * | 1972-03-31 | 1975-01-21 | Ibm | Electrophotographic charge generation layer |
US3890524A (en) * | 1972-06-27 | 1975-06-17 | Hitachi Ltd | Photo-conductive target comprising both solid and porous layers |
US3890525A (en) * | 1972-07-03 | 1975-06-17 | Hitachi Ltd | Photoconductive target of an image pickup tube comprising graded selenium-tellurium layer |
US3783324A (en) * | 1972-09-11 | 1974-01-01 | Rca Corp | Photosensitive charge storage electrode having a selectively conducting protective layer of matching valence band on its surface |
DE2248054B2 (de) * | 1972-09-30 | 1974-12-12 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Elektrophotographisches Aufzeichnungsmaterial |
DE2305407C3 (de) * | 1973-02-03 | 1978-04-06 | Standard Elektrik Lorenz Ag, 7000 Stuttgart | Elektroradiografisches Aufzeichnungsmaterial |
JPS5052927A (enrdf_load_stackoverflow) * | 1973-09-10 | 1975-05-10 | ||
US4001014A (en) * | 1973-09-17 | 1977-01-04 | Matsushita Electric Industrial Co., Ltd. | Electrophotographic photosensitive plate having tellurium present in varying concentrations across its thickness |
US4086512A (en) * | 1973-10-27 | 1978-04-25 | U.S. Philips Corporation | Camera tube employing silicon-chalcogenide target with heterojunction |
DE2452934A1 (de) * | 1973-12-07 | 1975-06-12 | Xerox Corp | Xerographisches element |
JPS5530657B2 (enrdf_load_stackoverflow) * | 1974-06-14 | 1980-08-12 | ||
US4103203A (en) * | 1974-09-09 | 1978-07-25 | Rca Corporation | Wafer mounting structure for pickup tube |
US4132918A (en) * | 1975-09-15 | 1979-01-02 | Rca Corporation | Polycrystalline selenium imaging devices |
US4021375A (en) * | 1975-09-15 | 1977-05-03 | Rca Corporation | Method of fabricating polycrystalline selenium imaging devices |
JPS5244194A (en) * | 1975-10-03 | 1977-04-06 | Hitachi Ltd | Photoelectric conversion device |
US4246510A (en) * | 1976-01-07 | 1981-01-20 | The United States Of America As Represented By The Secretary Of The Army | Retina for pyroelectric vidicon |
US4242373A (en) * | 1976-02-20 | 1980-12-30 | Hitachi, Ltd. | Method for vapor depositing a cerium oxide film |
JPS6051774B2 (ja) * | 1976-11-17 | 1985-11-15 | 株式会社日立製作所 | 撮像管タ−ゲツト |
NL7805418A (nl) * | 1978-05-19 | 1979-11-21 | Philips Nv | Opneembuis. |
JPS56103477A (en) * | 1980-01-21 | 1981-08-18 | Hitachi Ltd | Photoelectric conversion element |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3310700A (en) * | 1964-05-28 | 1967-03-21 | Rca Corp | Photoconductive device incorporating stabilizing layers on the face of the selenium layer |
-
1965
- 1965-11-15 US US507728A patent/US3350595A/en not_active Expired - Lifetime
-
1966
- 1966-10-18 GB GB46631/66A patent/GB1135460A/en not_active Expired
- 1966-11-10 FR FR83269A patent/FR1501227A/fr not_active Expired
- 1966-11-12 DE DE19661564544 patent/DE1564544B2/de not_active Withdrawn
- 1966-11-14 SE SE15544/66A patent/SE334539B/xx unknown
- 1966-11-14 NL NL666616015A patent/NL153377B/xx not_active IP Right Cessation
-
1968
- 1968-12-10 JP JP1968107653U patent/JPS4613044Y1/ja not_active Expired
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3990894A (en) * | 1969-10-29 | 1976-11-09 | Katsuragawa Denki Kabushiki Kaisha | Method of preparing photosensitive element for use in electrophotography |
US3816116A (en) * | 1970-12-29 | 1974-06-11 | Canon Kk | N-type photosensitive member for electrophotography |
US4126457A (en) * | 1973-05-30 | 1978-11-21 | Xerox Corporation | Evaporation technique for producing high temperature photoreceptor alloys |
US4254359A (en) | 1978-05-19 | 1981-03-03 | U.S. Philips Corporation | Camera tube with graduated concentration of tellurium in target |
FR2454176A1 (fr) * | 1979-04-11 | 1980-11-07 | Philips Nv | Tube de prise de vues pour television, a blocage ameliore contre l'injection d'electrons dans la cible |
FR2458100A1 (fr) * | 1979-05-31 | 1980-12-26 | Ricoh Kk | Materiau photoconducteur pour machine a copier electrophotographique |
US4286035A (en) * | 1979-05-31 | 1981-08-25 | Ricoh Company, Ltd. | Halogen doped selenium-tellurium alloy electrophotographic photoconductor |
Also Published As
Publication number | Publication date |
---|---|
DE1564544B2 (de) | 1971-05-19 |
SE334539B (enrdf_load_stackoverflow) | 1971-04-26 |
US3350595A (en) | 1967-10-31 |
JPS4613044Y1 (enrdf_load_stackoverflow) | 1971-05-10 |
NL6616015A (enrdf_load_stackoverflow) | 1967-05-16 |
FR1501227A (fr) | 1967-11-10 |
DE1564544A1 (de) | 1970-04-30 |
NL153377B (nl) | 1977-05-16 |
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