DE1514378B1 - Verfahren zur Herstellung eines leitenden Kanals in einem kristallinen Siliciumkoerper - Google Patents
Verfahren zur Herstellung eines leitenden Kanals in einem kristallinen SiliciumkoerperInfo
- Publication number
- DE1514378B1 DE1514378B1 DE19651514378D DE1514378DA DE1514378B1 DE 1514378 B1 DE1514378 B1 DE 1514378B1 DE 19651514378 D DE19651514378 D DE 19651514378D DE 1514378D A DE1514378D A DE 1514378DA DE 1514378 B1 DE1514378 B1 DE 1514378B1
- Authority
- DE
- Germany
- Prior art keywords
- silicon body
- silicon
- atmosphere
- heating
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
- H10P14/6306—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
- H10P14/6308—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
- H10P14/6309—Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
- H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
- H10P14/6302—Non-deposition formation processes
- H10P14/6322—Formation by thermal treatments
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US421532A US3336661A (en) | 1964-12-28 | 1964-12-28 | Semiconductive device fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1514378B1 true DE1514378B1 (de) | 1970-06-18 |
Family
ID=23670929
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19651514378D Pending DE1514378B1 (de) | 1964-12-28 | 1965-12-23 | Verfahren zur Herstellung eines leitenden Kanals in einem kristallinen Siliciumkoerper |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3336661A (https=) |
| BE (1) | BE674294A (https=) |
| DE (1) | DE1514378B1 (https=) |
| FR (1) | FR1464990A (https=) |
| GB (1) | GB1119570A (https=) |
| NL (1) | NL6516962A (https=) |
| SE (1) | SE326500B (https=) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
| GB1030670A (en) * | 1964-12-02 | 1966-05-25 | Standard Telephones Cables Ltd | Semiconductor devices |
| US3463974A (en) * | 1966-07-01 | 1969-08-26 | Fairchild Camera Instr Co | Mos transistor and method of manufacture |
| US3655545A (en) * | 1968-02-28 | 1972-04-11 | Ppg Industries Inc | Post heating of sputtered metal oxide films |
| US3547717A (en) * | 1968-04-29 | 1970-12-15 | Sprague Electric Co | Radiation resistant semiconductive device |
| US3620850A (en) * | 1970-03-25 | 1971-11-16 | Fairchild Camera Instr Co | Oxygen annealing |
| US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
| US4214919A (en) * | 1978-12-28 | 1980-07-29 | Burroughs Corporation | Technique of growing thin silicon oxide films utilizing argon in the contact gas |
| US4585492A (en) * | 1984-07-30 | 1986-04-29 | International Business Machines Corporation | Rapid thermal annealing of silicon dioxide for reduced hole trapping |
| KR100732288B1 (ko) * | 2005-04-15 | 2007-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
| US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
| US2981646A (en) * | 1958-02-11 | 1961-04-25 | Sprague Electric Co | Process of forming barrier layers |
| US3034211A (en) * | 1959-12-29 | 1962-05-15 | Pittsburgh Steel Co | Method of making clad steel |
| US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
| NL265382A (https=) * | 1960-03-08 | |||
| NL302804A (https=) * | 1962-08-23 | 1900-01-01 |
-
0
- BE BE674294D patent/BE674294A/xx unknown
-
1964
- 1964-12-28 US US421532A patent/US3336661A/en not_active Expired - Lifetime
-
1965
- 1965-12-21 GB GB54239/65A patent/GB1119570A/en not_active Expired
- 1965-12-23 DE DE19651514378D patent/DE1514378B1/de active Pending
- 1965-12-27 NL NL6516962A patent/NL6516962A/xx unknown
- 1965-12-27 SE SE16784/65A patent/SE326500B/xx unknown
- 1965-12-28 FR FR43987A patent/FR1464990A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1464990A (fr) | 1967-03-20 |
| BE674294A (https=) | |
| US3336661A (en) | 1967-08-22 |
| NL6516962A (https=) | 1966-06-29 |
| GB1119570A (en) | 1968-07-10 |
| SE326500B (https=) | 1970-07-27 |
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