GB1119570A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1119570A
GB1119570A GB54239/65A GB5423965A GB1119570A GB 1119570 A GB1119570 A GB 1119570A GB 54239/65 A GB54239/65 A GB 54239/65A GB 5423965 A GB5423965 A GB 5423965A GB 1119570 A GB1119570 A GB 1119570A
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB54239/65A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Publication of GB1119570A publication Critical patent/GB1119570A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6304Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6306Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials
    • H10P14/6308Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors
    • H10P14/6309Formation by oxidation, e.g. oxidation of the substrate of the semiconductor materials of Group IV semiconductors of silicon in uncombined form, i.e. pure silicon
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302Non-deposition formation processes
    • H10P14/6322Formation by thermal treatments
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/053Field effect transistors fets
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00Metal treatment
    • Y10S148/118Oxide films
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/91Controlling charging state at semiconductor-insulator interface
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00Semiconductor device manufacturing: process
    • Y10S438/914Doping
    • Y10S438/922Diffusion along grain boundaries
GB54239/65A 1964-12-28 1965-12-21 Semiconductor devices Expired GB1119570A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US421532A US3336661A (en) 1964-12-28 1964-12-28 Semiconductive device fabrication

Publications (1)

Publication Number Publication Date
GB1119570A true GB1119570A (en) 1968-07-10

Family

ID=23670929

Family Applications (1)

Application Number Title Priority Date Filing Date
GB54239/65A Expired GB1119570A (en) 1964-12-28 1965-12-21 Semiconductor devices

Country Status (7)

Country Link
US (1) US3336661A (https=)
BE (1) BE674294A (https=)
DE (1) DE1514378B1 (https=)
FR (1) FR1464990A (https=)
GB (1) GB1119570A (https=)
NL (1) NL6516962A (https=)
SE (1) SE326500B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
GB1030670A (en) * 1964-12-02 1966-05-25 Standard Telephones Cables Ltd Semiconductor devices
US3463974A (en) * 1966-07-01 1969-08-26 Fairchild Camera Instr Co Mos transistor and method of manufacture
US3655545A (en) * 1968-02-28 1972-04-11 Ppg Industries Inc Post heating of sputtered metal oxide films
US3547717A (en) * 1968-04-29 1970-12-15 Sprague Electric Co Radiation resistant semiconductive device
US3620850A (en) * 1970-03-25 1971-11-16 Fairchild Camera Instr Co Oxygen annealing
US4139658A (en) * 1976-06-23 1979-02-13 Rca Corp. Process for manufacturing a radiation hardened oxide
US4214919A (en) * 1978-12-28 1980-07-29 Burroughs Corporation Technique of growing thin silicon oxide films utilizing argon in the contact gas
US4585492A (en) * 1984-07-30 1986-04-29 International Business Machines Corporation Rapid thermal annealing of silicon dioxide for reduced hole trapping
KR100732288B1 (ko) * 2005-04-15 2007-06-25 주식회사 하이닉스반도체 반도체 소자의 제조 방법

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879190A (en) * 1957-03-22 1959-03-24 Bell Telephone Labor Inc Fabrication of silicon devices
US2873222A (en) * 1957-11-07 1959-02-10 Bell Telephone Labor Inc Vapor-solid diffusion of semiconductive material
US2981646A (en) * 1958-02-11 1961-04-25 Sprague Electric Co Process of forming barrier layers
US3034211A (en) * 1959-12-29 1962-05-15 Pittsburgh Steel Co Method of making clad steel
US3147152A (en) * 1960-01-28 1964-09-01 Western Electric Co Diffusion control in semiconductive bodies
NL265382A (https=) * 1960-03-08
NL302804A (https=) * 1962-08-23 1900-01-01

Also Published As

Publication number Publication date
DE1514378B1 (de) 1970-06-18
FR1464990A (fr) 1967-03-20
BE674294A (https=)
US3336661A (en) 1967-08-22
NL6516962A (https=) 1966-06-29
SE326500B (https=) 1970-07-27

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