DE1464703B2 - Kapazitaetsdiode - Google Patents

Kapazitaetsdiode

Info

Publication number
DE1464703B2
DE1464703B2 DE19631464703 DE1464703A DE1464703B2 DE 1464703 B2 DE1464703 B2 DE 1464703B2 DE 19631464703 DE19631464703 DE 19631464703 DE 1464703 A DE1464703 A DE 1464703A DE 1464703 B2 DE1464703 B2 DE 1464703B2
Authority
DE
Germany
Prior art keywords
semiconductor body
conductivity type
junction
opposite conductivity
area
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19631464703
Other languages
German (de)
English (en)
Other versions
DE1464703A1 (de
DE1464703C3 (OSRAM
Inventor
Franz 7803 Gundelfingen Scheffer Gerhard Dipl Phys 7800 Frei bürg Ehrhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Publication of DE1464703A1 publication Critical patent/DE1464703A1/de
Publication of DE1464703B2 publication Critical patent/DE1464703B2/de
Application granted granted Critical
Publication of DE1464703C3 publication Critical patent/DE1464703C3/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 
    • H10P95/00—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
DE19631464703 1963-08-13 1963-08-13 Kapazitaetsdiode Granted DE1464703B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEJ0024244 1963-08-13
DEJ0024244 1963-08-13

Publications (3)

Publication Number Publication Date
DE1464703A1 DE1464703A1 (de) 1968-11-28
DE1464703B2 true DE1464703B2 (de) 1973-04-19
DE1464703C3 DE1464703C3 (OSRAM) 1976-04-22

Family

ID=7201736

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19631464703 Granted DE1464703B2 (de) 1963-08-13 1963-08-13 Kapazitaetsdiode

Country Status (3)

Country Link
DE (1) DE1464703B2 (OSRAM)
FR (1) FR1390594A (OSRAM)
GB (1) GB1042270A (OSRAM)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2405067A1 (de) * 1974-02-02 1975-08-07 Licentia Gmbh Verfahren zum herstellen einer halbleiteranordnung

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2405067A1 (de) * 1974-02-02 1975-08-07 Licentia Gmbh Verfahren zum herstellen einer halbleiteranordnung

Also Published As

Publication number Publication date
DE1464703A1 (de) 1968-11-28
GB1042270A (en) 1966-09-14
FR1390594A (fr) 1965-02-26

Similar Documents

Publication Publication Date Title
DE1944793C3 (de) Verfahren zur Herstellung einer integrierten Halbleiteranordnung
DE2016760A1 (de) Halbleiteranordnung
DE1941075B2 (de) Schottky sperrschichtdiode und verfahren zur herstellung derselben
DE1964979C3 (de) Halbleiterbauelement mit wenigstens einem lateralen Transistor und Verfahren zu seiner Herstellung
DE3020609C2 (de) Verfahren zum Herstellen einer integrierten Schaltung mit wenigstens einem I↑2↑L-Element
DE2133979C3 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE1094370B (de) Symmetrisch aufgebaute, flaechenhafte Halbleiteranordnung, insbesondere Transistor
DE1514855B2 (de) Halbleitervorrichtung
DE2364752A1 (de) Halbleitervorrichtung
DE69229937T2 (de) Avalanche Diode in einer bipolaren integrierten Schaltung
DE1813130C3 (de) Verfahren zur Herstellung einer Zenerdiode
DE1464703C3 (OSRAM)
DE1464703B2 (de) Kapazitaetsdiode
DE3005367C2 (OSRAM)
DE1066283B (OSRAM)
DE1764829B1 (de) Planartransistor mit einem scheibenfoermigen halbleiter koerper
DE4410461C1 (de) Halbleiterbauelement mit anodenseitiger Getterung
DE2540354A1 (de) Als thermoionische injektionsdiode geeignete halbleiterstruktur
DE1514656A1 (de) Verfahren zum Herstellen von Halbleiterkoerpern
DE2616925C2 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE68919695T2 (de) Integrierte schaltung mit einem vertikalen transistor.
DE2005940C3 (de) Halbleiterbauelement und Verfahren zu seiner Herstellung
DE3142618C2 (de) Halbleiteranordnung mit Transistor und Widerstandszone
DE1965051C2 (de) Halbleiterbauelement
DE2851186A1 (de) Transistor vom mesatyp und verfahren zur herstellung dieses transistors

Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977