GB1042270A - Variable capacitance diodes - Google Patents
Variable capacitance diodesInfo
- Publication number
- GB1042270A GB1042270A GB3309564A GB3309564A GB1042270A GB 1042270 A GB1042270 A GB 1042270A GB 3309564 A GB3309564 A GB 3309564A GB 3309564 A GB3309564 A GB 3309564A GB 1042270 A GB1042270 A GB 1042270A
- Authority
- GB
- United Kingdom
- Prior art keywords
- junction
- diffusion
- region
- alloying
- aug
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical group [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000843 powder Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Recrystallisation Techniques (AREA)
- Thyristors (AREA)
Abstract
1,042,270. Semi-conductor devices. INTERMETALL GES FUR METALLURGIE UND ELECTRONIK. Aug. 13, 1964 [Aug. 13, 1963], No. 33095/64. Heading H1K. A variable capacitance PN-junction diode consists of a P+ region surrounded by P material and an N + zone forming a junction of which the central area 3 contacts the P + region and the outer area 4 contacts the P material. The invention also covers the opposite arrangement, with N for P and vice versa. The P+N+ junction 3 provides for a relatively large change in capacitance for a given voltage change and the surrounding junction 4 has a relatively high breakdown voltage. The device shown is a P silicon body-or a P layer on a P+ body, not shown-in which a P+ region has been formed by diffusion or alloying through an oxide mask. If diffusion is used, this may be by the technique of embedding the masked body in a powder of highly doped semi-conductor. The preferred dopant is boron. The N+ zone is formed by diffusion, alloying or epitaxial growth through a new oxide mask 2. In this case the preferred dopant is phosphorous. The second mask, 2, is left in position to protect the junction.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ0024244 | 1963-08-13 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1042270A true GB1042270A (en) | 1966-09-14 |
Family
ID=7201736
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB3309564A Expired GB1042270A (en) | 1963-08-13 | 1964-08-13 | Variable capacitance diodes |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1464703B2 (en) |
| FR (1) | FR1390594A (en) |
| GB (1) | GB1042270A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3579278A (en) * | 1967-10-12 | 1971-05-18 | Varian Associates | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor |
| US3999212A (en) * | 1967-03-03 | 1976-12-21 | Hitachi, Ltd. | Field effect semiconductor device having a protective diode |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2405067C2 (en) * | 1974-02-02 | 1982-06-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Method for manufacturing a semiconductor device |
-
1963
- 1963-08-13 DE DE19631464703 patent/DE1464703B2/en active Granted
-
1964
- 1964-03-20 FR FR968166A patent/FR1390594A/en not_active Expired
- 1964-08-13 GB GB3309564A patent/GB1042270A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3999212A (en) * | 1967-03-03 | 1976-12-21 | Hitachi, Ltd. | Field effect semiconductor device having a protective diode |
| US3579278A (en) * | 1967-10-12 | 1971-05-18 | Varian Associates | Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1390594A (en) | 1965-02-26 |
| DE1464703A1 (en) | 1968-11-28 |
| DE1464703B2 (en) | 1973-04-19 |
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