FR1390594A - Capacitor diode and method for its manufacture - Google Patents

Capacitor diode and method for its manufacture

Info

Publication number
FR1390594A
FR1390594A FR968166A FR968166A FR1390594A FR 1390594 A FR1390594 A FR 1390594A FR 968166 A FR968166 A FR 968166A FR 968166 A FR968166 A FR 968166A FR 1390594 A FR1390594 A FR 1390594A
Authority
FR
France
Prior art keywords
manufacture
capacitor diode
capacitor
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR968166A
Other languages
French (fr)
Inventor
Franz Ehrhardt
Gerhard Scheffer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
TDK Micronas GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Micronas GmbH filed Critical TDK Micronas GmbH
Application granted granted Critical
Publication of FR1390594A publication Critical patent/FR1390594A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92Capacitors having potential barriers
    • H01L29/93Variable capacitance diodes, e.g. varactors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thyristors (AREA)
  • Recrystallisation Techniques (AREA)
FR968166A 1963-08-13 1964-03-20 Capacitor diode and method for its manufacture Expired FR1390594A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEJ0024244 1963-08-13

Publications (1)

Publication Number Publication Date
FR1390594A true FR1390594A (en) 1965-02-26

Family

ID=7201736

Family Applications (1)

Application Number Title Priority Date Filing Date
FR968166A Expired FR1390594A (en) 1963-08-13 1964-03-20 Capacitor diode and method for its manufacture

Country Status (3)

Country Link
DE (1) DE1464703B2 (en)
FR (1) FR1390594A (en)
GB (1) GB1042270A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3999212A (en) * 1967-03-03 1976-12-21 Hitachi, Ltd. Field effect semiconductor device having a protective diode
US3579278A (en) * 1967-10-12 1971-05-18 Varian Associates Surface barrier diode having a hypersensitive {72 {30 {0 region forming a hypersensitive voltage variable capacitor
DE2405067C2 (en) * 1974-02-02 1982-06-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Method for manufacturing a semiconductor device

Also Published As

Publication number Publication date
GB1042270A (en) 1966-09-14
DE1464703A1 (en) 1968-11-28
DE1464703B2 (en) 1973-04-19

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