CH441512A - Lateral transistor and method for its manufacture - Google Patents

Lateral transistor and method for its manufacture

Info

Publication number
CH441512A
CH441512A CH1113266A CH1113266A CH441512A CH 441512 A CH441512 A CH 441512A CH 1113266 A CH1113266 A CH 1113266A CH 1113266 A CH1113266 A CH 1113266A CH 441512 A CH441512 A CH 441512A
Authority
CH
Switzerland
Prior art keywords
manufacture
lateral transistor
transistor
lateral
Prior art date
Application number
CH1113266A
Other languages
French (fr)
Inventor
Perrenoud Robert
Original Assignee
Centre Electron Horloger
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Electron Horloger filed Critical Centre Electron Horloger
Priority to CH1113266A priority Critical patent/CH441512A/en
Publication of CH441512A publication Critical patent/CH441512A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/72Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73Bipolar junction transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
CH1113266A 1966-08-02 1966-08-02 Lateral transistor and method for its manufacture CH441512A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CH1113266A CH441512A (en) 1966-08-02 1966-08-02 Lateral transistor and method for its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1113266A CH441512A (en) 1966-08-02 1966-08-02 Lateral transistor and method for its manufacture

Publications (1)

Publication Number Publication Date
CH441512A true CH441512A (en) 1967-08-15

Family

ID=4370378

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1113266A CH441512A (en) 1966-08-02 1966-08-02 Lateral transistor and method for its manufacture

Country Status (1)

Country Link
CH (1) CH441512A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2068633A1 (en) * 1969-11-25 1971-08-27 Itt
US3663872A (en) * 1969-01-22 1972-05-16 Nippon Electric Co Integrated circuit lateral transistor
DE3618166A1 (en) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh LATERAL TRANSISTOR
US5605850A (en) * 1993-09-27 1997-02-25 Sgs-Thomson Microelectronics S.R.L. Method for making a low-noise bipolar transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3663872A (en) * 1969-01-22 1972-05-16 Nippon Electric Co Integrated circuit lateral transistor
FR2068633A1 (en) * 1969-11-25 1971-08-27 Itt
DE3618166A1 (en) * 1986-05-30 1987-12-03 Telefunken Electronic Gmbh LATERAL TRANSISTOR
US4829356A (en) * 1986-05-30 1989-05-09 Telefunken Electronic Gmbh Lateral transistor with buried semiconductor zone
US5605850A (en) * 1993-09-27 1997-02-25 Sgs-Thomson Microelectronics S.R.L. Method for making a low-noise bipolar transistor
US5828124A (en) * 1993-09-27 1998-10-27 Sgs-Thomson Microelectronics S.R.L. Low-noise bipolar transistor

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