GB1364035A - Method for the manufacturing of a zener diode - Google Patents
Method for the manufacturing of a zener diodeInfo
- Publication number
- GB1364035A GB1364035A GB743173A GB743173A GB1364035A GB 1364035 A GB1364035 A GB 1364035A GB 743173 A GB743173 A GB 743173A GB 743173 A GB743173 A GB 743173A GB 1364035 A GB1364035 A GB 1364035A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- diffused
- mask
- donor
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 3
- 229910052796 boron Inorganic materials 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 230000015556 catabolic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 229910052814 silicon oxide Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Thyristors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
1364035 Zener diodes ITT INDUSTRIES Inc 15 Feb 1973 [18 Feb 1972] 7431/73 Heading H1K A silicon Zener diode comprising a PN junction, the central area of which has a breakdown voltage less than 10 volts and lower than that of the surrounding portion of the junction, is made by diffusing donor impurity into one face of an N-type silicon wafer to produce a zone with a doping concentration between 10<SP>19</SP> atoms/c.c. and the degenerate concentration and then diffusing boron into the wafer to a plane of constant concentration within the donor diffused zone to form the central area of the junction. The wafer may have a resistivity of 10-100 milliohm/cm. due to antimony or phosphorus doping, and antimony contained in a silicon oxide layer is the preferred donor diffusant, though arsenic and phosphorus may be used if the source concentration is suitably controlled. In the preferred embodiment after donor diffusion into the entire surface an oxide mask with an annular aperture is formed on the zone and an acceptor diffused through it to provide a P ring 4 extending through the N+ zone 2. Then the boron is diffused through a mask having an aperture within the outer periphery of the annular aperture to form P + zone 3. In an alternative embodiment the N+ zone is formed by diffusion through a mask. The aperture in this mask is then enlarged and the boron diffused through it.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722207654 DE2207654B2 (en) | 1972-02-18 | 1972-02-18 | Method of manufacturing a zener diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1364035A true GB1364035A (en) | 1974-08-21 |
Family
ID=5836353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB743173A Expired GB1364035A (en) | 1972-02-18 | 1973-02-15 | Method for the manufacturing of a zener diode |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU463838B2 (en) |
| DE (1) | DE2207654B2 (en) |
| FR (1) | FR2172191B1 (en) |
| GB (1) | GB1364035A (en) |
| IT (1) | IT979130B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2149205A (en) * | 1983-10-31 | 1985-06-05 | Burr Brown Corp | Integrated circuit reference diode and fabrication method therefor |
| EP1164643A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| CN113206157A (en) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | In-vivo breakdown blunt glass diode and manufacturing method thereof |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7513161A (en) * | 1975-11-11 | 1977-05-13 | Philips Nv | PROCESS FOR THE MANUFACTURE OF A SEMICONDUCTOR DEVICE, AND DEVICE MANUFACTURED ACCORDING TO THE PROCEDURE. |
| DE2916114A1 (en) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | SEMI-CONDUCTOR DEVICE |
| NL7907680A (en) * | 1979-10-18 | 1981-04-22 | Philips Nv | ZENERDIODE. |
| NL187942C (en) * | 1980-08-18 | 1992-02-17 | Philips Nv | ZENERDIODE AND METHOD OF MANUFACTURE THEREOF |
| FR2500855A1 (en) * | 1981-02-27 | 1982-09-03 | Thomson Csf | Doping and metallisation of semiconductor device - using polycrystalline silicon layer and button on top contacted with metal |
| US4441114A (en) * | 1981-12-22 | 1984-04-03 | International Business Machines Corporation | CMOS Subsurface breakdown zener diode |
-
1972
- 1972-02-18 DE DE19722207654 patent/DE2207654B2/en not_active Ceased
-
1973
- 1973-02-08 FR FR7305086A patent/FR2172191B1/fr not_active Expired
- 1973-02-08 AU AU52003/73A patent/AU463838B2/en not_active Expired
- 1973-02-15 GB GB743173A patent/GB1364035A/en not_active Expired
- 1973-02-15 IT IT2041773A patent/IT979130B/en active
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2149205A (en) * | 1983-10-31 | 1985-06-05 | Burr Brown Corp | Integrated circuit reference diode and fabrication method therefor |
| EP1164643A2 (en) * | 2000-06-07 | 2001-12-19 | Nec Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| EP1164643A3 (en) * | 2000-06-07 | 2004-09-29 | NEC Electronics Corporation | Diode having breakdown voltage adjustable to arbitrary value without increase of parasitic capacitance and process for fabrication thereof |
| CN113206157A (en) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | In-vivo breakdown blunt glass diode and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| IT979130B (en) | 1974-09-30 |
| DE2207654B2 (en) | 1974-02-14 |
| DE2207654A1 (en) | 1973-08-30 |
| FR2172191B1 (en) | 1978-04-14 |
| AU5200373A (en) | 1974-08-08 |
| FR2172191A1 (en) | 1973-09-28 |
| AU463838B2 (en) | 1975-08-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| 746 | Register noted 'licences of right' (sect. 46/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |