FR2172191A1 - - Google Patents
Info
- Publication number
- FR2172191A1 FR2172191A1 FR7305086A FR7305086A FR2172191A1 FR 2172191 A1 FR2172191 A1 FR 2172191A1 FR 7305086 A FR7305086 A FR 7305086A FR 7305086 A FR7305086 A FR 7305086A FR 2172191 A1 FR2172191 A1 FR 2172191A1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/866—Zener diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19722207654 DE2207654B2 (en) | 1972-02-18 | 1972-02-18 | Method of manufacturing a zener diode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2172191A1 true FR2172191A1 (en) | 1973-09-28 |
| FR2172191B1 FR2172191B1 (en) | 1978-04-14 |
Family
ID=5836353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7305086A Expired FR2172191B1 (en) | 1972-02-18 | 1973-02-08 |
Country Status (5)
| Country | Link |
|---|---|
| AU (1) | AU463838B2 (en) |
| DE (1) | DE2207654B2 (en) |
| FR (1) | FR2172191B1 (en) |
| GB (1) | GB1364035A (en) |
| IT (1) | IT979130B (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2331884A1 (en) * | 1975-11-11 | 1977-06-10 | Philips Nv | PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND MANUFACTURING DEVICE OF THE KIND |
| FR2468208A1 (en) * | 1979-10-18 | 1981-04-30 | Philips Nv | SEMICONDUCTOR DEVICE WITH ZENER DIODE |
| FR2488734A1 (en) * | 1980-08-18 | 1982-02-19 | Philips Nv | ZENER DIODE AND METHOD FOR MANUFACTURING THE SAME |
| FR2500855A1 (en) * | 1981-02-27 | 1982-09-03 | Thomson Csf | Doping and metallisation of semiconductor device - using polycrystalline silicon layer and button on top contacted with metal |
| EP0082331A2 (en) * | 1981-12-22 | 1983-06-29 | International Business Machines Corporation | Subsurface avalanche breakdown Zener diode |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2916114A1 (en) * | 1978-04-21 | 1979-10-31 | Hitachi Ltd | SEMI-CONDUCTOR DEVICE |
| US4833509A (en) * | 1983-10-31 | 1989-05-23 | Burr-Brown Corporation | Integrated circuit reference diode and fabrication method therefor |
| JP2001352079A (en) * | 2000-06-07 | 2001-12-21 | Nec Corp | Diode and its manufacturing method |
| CN113206157A (en) * | 2021-04-30 | 2021-08-03 | 中国振华集团永光电子有限公司（国营第八七三厂） | In-vivo breakdown blunt glass diode and manufacturing method thereof |
-
1972
- 1972-02-18 DE DE19722207654 patent/DE2207654B2/en not_active Ceased
-
1973
- 1973-02-08 FR FR7305086A patent/FR2172191B1/fr not_active Expired
- 1973-02-08 AU AU52003/73A patent/AU463838B2/en not_active Expired
- 1973-02-15 GB GB743173A patent/GB1364035A/en not_active Expired
- 1973-02-15 IT IT2041773A patent/IT979130B/en active
Non-Patent Citations (1)
| Title |
|---|
| NEANT * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2331884A1 (en) * | 1975-11-11 | 1977-06-10 | Philips Nv | PROCESS FOR MANUFACTURING A SEMICONDUCTOR DEVICE, AND MANUFACTURING DEVICE OF THE KIND |
| FR2468208A1 (en) * | 1979-10-18 | 1981-04-30 | Philips Nv | SEMICONDUCTOR DEVICE WITH ZENER DIODE |
| FR2488734A1 (en) * | 1980-08-18 | 1982-02-19 | Philips Nv | ZENER DIODE AND METHOD FOR MANUFACTURING THE SAME |
| FR2500855A1 (en) * | 1981-02-27 | 1982-09-03 | Thomson Csf | Doping and metallisation of semiconductor device - using polycrystalline silicon layer and button on top contacted with metal |
| EP0082331A2 (en) * | 1981-12-22 | 1983-06-29 | International Business Machines Corporation | Subsurface avalanche breakdown Zener diode |
| EP0082331A3 (en) * | 1981-12-22 | 1986-06-04 | International Business Machines Corporation | Subsurface avalanche breakdown zener diode |
Also Published As
| Publication number | Publication date |
|---|---|
| IT979130B (en) | 1974-09-30 |
| DE2207654B2 (en) | 1974-02-14 |
| DE2207654A1 (en) | 1973-08-30 |
| FR2172191B1 (en) | 1978-04-14 |
| GB1364035A (en) | 1974-08-21 |
| AU5200373A (en) | 1974-08-08 |
| AU463838B2 (en) | 1975-08-07 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |