DE1444520B2 - Verfahren zum herstellen eines halbleiterbauelements - Google Patents

Verfahren zum herstellen eines halbleiterbauelements

Info

Publication number
DE1444520B2
DE1444520B2 DE19631444520 DE1444520A DE1444520B2 DE 1444520 B2 DE1444520 B2 DE 1444520B2 DE 19631444520 DE19631444520 DE 19631444520 DE 1444520 A DE1444520 A DE 1444520A DE 1444520 B2 DE1444520 B2 DE 1444520B2
Authority
DE
Germany
Prior art keywords
silicon oxide
oxide layer
layer
semiconductor
dopant
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19631444520
Other languages
German (de)
English (en)
Other versions
DE1444520A1 (de
Inventor
Newark Olmstead John Aaron Somerviile N J Scott jun Joseph Hurlong (V St A)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US167341A external-priority patent/US3200019A/en
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1444520A1 publication Critical patent/DE1444520A1/de
Publication of DE1444520B2 publication Critical patent/DE1444520B2/de
Pending legal-status Critical Current

Links

Classifications

    • H10P95/00—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H10P14/6334—
    • H10P14/6686—
    • H10P14/69215—
    • H10P14/6923—
    • H10P32/14—
    • H10P32/141—
    • H10P32/171—
    • H10P32/174—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
DE19631444520 1962-01-19 1963-01-11 Verfahren zum herstellen eines halbleiterbauelements Pending DE1444520B2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US167341A US3200019A (en) 1962-01-19 1962-01-19 Method for making a semiconductor device
US420523A US3340445A (en) 1962-01-19 1964-12-23 Semiconductor devices having modifier-containing surface oxide layer

Publications (2)

Publication Number Publication Date
DE1444520A1 DE1444520A1 (de) 1968-11-07
DE1444520B2 true DE1444520B2 (de) 1971-06-16

Family

ID=26863069

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19631444520 Pending DE1444520B2 (de) 1962-01-19 1963-01-11 Verfahren zum herstellen eines halbleiterbauelements

Country Status (5)

Country Link
US (1) US3340445A (cg-RX-API-DMAC10.html)
BE (1) BE627302A (cg-RX-API-DMAC10.html)
DE (1) DE1444520B2 (cg-RX-API-DMAC10.html)
GB (1) GB1013985A (cg-RX-API-DMAC10.html)
NL (2) NL141709B (cg-RX-API-DMAC10.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030798A1 (en) * 1979-12-17 1981-06-24 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1014830A (en) * 1972-11-15 1977-08-02 Klaus C. Wiemer Method of forming doped dielectric layers utilizing reactive plasma deposition
DE102008019402A1 (de) 2008-04-14 2009-10-15 Gebr. Schmid Gmbh & Co. Verfahren zur selektiven Dotierung von Silizium sowie damit behandeltes Silizium-Substrat
DE102009041546A1 (de) * 2009-03-27 2010-10-14 Bosch Solar Energy Ag Verfahren zur Herstellung von Solarzellen mit selektivem Emitter

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE534505A (cg-RX-API-DMAC10.html) * 1953-12-30
US3145328A (en) * 1957-04-29 1964-08-18 Raytheon Co Methods of preventing channel formation on semiconductive bodies
US2989424A (en) * 1958-03-31 1961-06-20 Westinghouse Electric Corp Method of providing an oxide protective coating for semiconductors
US2899344A (en) * 1958-04-30 1959-08-11 Rinse in
US3001896A (en) * 1958-12-24 1961-09-26 Ibm Diffusion control in germanium
US3040218A (en) * 1959-03-10 1962-06-19 Hoffman Electronics Corp Constant current devices
US3070466A (en) * 1959-04-30 1962-12-25 Ibm Diffusion in semiconductor material
US2981877A (en) * 1959-07-30 1961-04-25 Fairchild Semiconductor Semiconductor device-and-lead structure
US3085033A (en) * 1960-03-08 1963-04-09 Bell Telephone Labor Inc Fabrication of semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0030798A1 (en) * 1979-12-17 1981-06-24 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition

Also Published As

Publication number Publication date
DE1444520A1 (de) 1968-11-07
NL287925A (cg-RX-API-DMAC10.html)
NL141709B (nl) 1974-03-15
US3340445A (en) 1967-09-05
GB1013985A (en) 1965-12-22
BE627302A (cg-RX-API-DMAC10.html)

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Legal Events

Date Code Title Description
SH Request for examination between 03.10.1968 and 22.04.1971