DE1439938A1 - Hochfrequenz-Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Hochfrequenz-Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE1439938A1
DE1439938A1 DE19621439938 DE1439938A DE1439938A1 DE 1439938 A1 DE1439938 A1 DE 1439938A1 DE 19621439938 DE19621439938 DE 19621439938 DE 1439938 A DE1439938 A DE 1439938A DE 1439938 A1 DE1439938 A1 DE 1439938A1
Authority
DE
Germany
Prior art keywords
layer
oxide layer
metallic layer
metallic
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19621439938
Other languages
German (de)
English (en)
Inventor
Davis Ronald Edward
Nelson James Thomas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1439938A1 publication Critical patent/DE1439938A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)
DE19621439938 1961-12-19 1962-12-13 Hochfrequenz-Halbleitervorrichtung und Verfahren zu ihrer Herstellung Pending DE1439938A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16059161A 1961-12-19 1961-12-19

Publications (1)

Publication Number Publication Date
DE1439938A1 true DE1439938A1 (de) 1968-12-19

Family

ID=22577517

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19621439938 Pending DE1439938A1 (de) 1961-12-19 1962-12-13 Hochfrequenz-Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Country Status (5)

Country Link
BE (1) BE626251A (https=)
DE (1) DE1439938A1 (https=)
FR (1) FR1339897A (https=)
GB (1) GB954534A (https=)
NL (1) NL285921A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1273698B (de) * 1964-01-08 1968-07-25 Telefunken Patent Halbleiteranordnung
CA941074A (en) * 1964-04-16 1974-01-29 Northern Electric Company Limited Semiconductor devices with field electrodes
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
US3312871A (en) * 1964-12-23 1967-04-04 Ibm Interconnection arrangement for integrated circuits
US3600648A (en) * 1965-04-21 1971-08-17 Sylvania Electric Prod Semiconductor electrical translating device
DE1514563A1 (de) * 1965-09-07 1969-06-19 Semikron Gleichrichterbau Steuerbares Halbleiterbauelement
US3651384A (en) * 1971-03-08 1972-03-21 Warren P Waters Planar schottky barrier

Also Published As

Publication number Publication date
NL285921A (https=)
BE626251A (https=)
GB954534A (en) 1964-04-08
FR1339897A (fr) 1963-10-11

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