DE1439921B2 - Verstärkendes Halbleiterbauelement - Google Patents
Verstärkendes HalbleiterbauelementInfo
- Publication number
- DE1439921B2 DE1439921B2 DE1439921A DE1439921A DE1439921B2 DE 1439921 B2 DE1439921 B2 DE 1439921B2 DE 1439921 A DE1439921 A DE 1439921A DE 1439921 A DE1439921 A DE 1439921A DE 1439921 B2 DE1439921 B2 DE 1439921B2
- Authority
- DE
- Germany
- Prior art keywords
- oxide layer
- voltage
- zones
- silicon
- genetic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 239000004065 semiconductor Substances 0.000 title claims description 37
- 230000003014 reinforcing effect Effects 0.000 title claims description 5
- 230000002068 genetic effect Effects 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000011248 coating agent Substances 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- RJCRUVXAWQRZKQ-UHFFFAOYSA-N oxosilicon;silicon Chemical compound [Si].[Si]=O RJCRUVXAWQRZKQ-UHFFFAOYSA-N 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13688A US3206670A (en) | 1960-03-08 | 1960-03-08 | Semiconductor devices having dielectric coatings |
| US32801A US3102230A (en) | 1960-03-08 | 1960-05-31 | Electric field controlled semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1439921A1 DE1439921A1 (de) | 1968-11-28 |
| DE1439921B2 true DE1439921B2 (de) | 1974-10-03 |
Family
ID=26685136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1439921A Ceased DE1439921B2 (de) | 1960-03-08 | 1961-05-19 | Verstärkendes Halbleiterbauelement |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US3206670A (US07935154-20110503-C00006.png) |
| DE (1) | DE1439921B2 (US07935154-20110503-C00006.png) |
| GB (1) | GB992003A (US07935154-20110503-C00006.png) |
| NL (1) | NL265382A (US07935154-20110503-C00006.png) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL265382A (US07935154-20110503-C00006.png) * | 1960-03-08 | |||
| DE1160106B (de) * | 1960-11-11 | 1963-12-27 | Intermetall | Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen |
| NL274830A (US07935154-20110503-C00006.png) * | 1961-04-12 | |||
| NL282170A (US07935154-20110503-C00006.png) * | 1961-08-17 | |||
| NL293292A (US07935154-20110503-C00006.png) * | 1962-06-11 | |||
| NL297002A (US07935154-20110503-C00006.png) * | 1962-08-23 | 1900-01-01 | ||
| NL297601A (US07935154-20110503-C00006.png) * | 1962-09-07 | Rca Corp | ||
| NL301883A (US07935154-20110503-C00006.png) * | 1962-12-17 | |||
| NL302841A (US07935154-20110503-C00006.png) * | 1963-01-02 | |||
| US3384829A (en) * | 1963-02-08 | 1968-05-21 | Nippon Electric Co | Semiconductor variable capacitance element |
| CA759138A (en) * | 1963-05-20 | 1967-05-16 | F. Rogers Gordon | Field effect transistor circuit |
| US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
| GB1071384A (en) * | 1963-06-24 | 1967-06-07 | Hitachi Ltd | Method for manufacture of field effect semiconductor devices |
| DE1252276C2 (de) * | 1963-08-23 | 1974-05-30 | Verstaerker fuer elektrische hochfrequenzschwingungen | |
| NL297331A (US07935154-20110503-C00006.png) * | 1963-08-30 | |||
| US3360736A (en) * | 1963-09-10 | 1967-12-26 | Hitachi Ltd | Two input field effect transistor amplifier |
| US3263095A (en) * | 1963-12-26 | 1966-07-26 | Ibm | Heterojunction surface channel transistors |
| NL154867B (nl) * | 1964-02-13 | 1977-10-17 | Hitachi Ltd | Werkwijze voor de vervaardiging van een halfgeleiderinrichting, alsmede volgens deze werkwijze vervaardigde veldeffect-transistor en planaire transistor. |
| US3383569A (en) * | 1964-03-26 | 1968-05-14 | Suisse Horlogerie | Transistor-capacitor integrated circuit structure |
| US3328601A (en) * | 1964-04-06 | 1967-06-27 | Northern Electric Co | Distributed field effect devices |
| US3298863A (en) * | 1964-05-08 | 1967-01-17 | Joseph H Mccusker | Method for fabricating thin film transistors |
| US3446995A (en) * | 1964-05-27 | 1969-05-27 | Ibm | Semiconductor circuits,devices and methods of improving electrical characteristics of latter |
| US3408543A (en) * | 1964-06-01 | 1968-10-29 | Hitachi Ltd | Combination capacitor and fieldeffect transistor |
| US3374406A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Insulated-gate field-effect transistor |
| US3374407A (en) * | 1964-06-01 | 1968-03-19 | Rca Corp | Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic |
| US3343049A (en) * | 1964-06-18 | 1967-09-19 | Ibm | Semiconductor devices and passivation thereof |
| USB381501I5 (US07935154-20110503-C00006.png) * | 1964-07-09 | |||
| US3358195A (en) * | 1964-07-24 | 1967-12-12 | Motorola Inc | Remote cutoff field effect transistor |
| GB1066159A (en) * | 1964-10-17 | 1967-04-19 | Matsushita Electric Ind Co Ltd | Semiconductor devices |
| US3328210A (en) * | 1964-10-26 | 1967-06-27 | North American Aviation Inc | Method of treating semiconductor device by ionic bombardment |
| US3305708A (en) * | 1964-11-25 | 1967-02-21 | Rca Corp | Insulated-gate field-effect semiconductor device |
| BE674294A (US07935154-20110503-C00006.png) * | 1964-12-28 | |||
| US3344322A (en) * | 1965-01-22 | 1967-09-26 | Hughes Aircraft Co | Metal-oxide-semiconductor field effect transistor |
| US3391282A (en) * | 1965-02-19 | 1968-07-02 | Fairchild Camera Instr Co | Variable length photodiode using an inversion plate |
| US3417464A (en) * | 1965-05-21 | 1968-12-24 | Ibm | Method for fabricating insulated-gate field-effect transistors |
| US3411199A (en) * | 1965-05-28 | 1968-11-19 | Rca Corp | Semiconductor device fabrication |
| US3419761A (en) * | 1965-10-11 | 1968-12-31 | Ibm | Method for depositing silicon nitride insulating films and electric devices incorporating such films |
| US3412297A (en) * | 1965-12-16 | 1968-11-19 | United Aircraft Corp | Mos field-effect transistor with a onemicron vertical channel |
| US3444442A (en) * | 1966-04-27 | 1969-05-13 | Nippon Electric Co | Avalanche transistor having reduced width in depletion region adjacent gate surface |
| US3336486A (en) * | 1966-09-06 | 1967-08-15 | Energy Conversion Devices Inc | Control system having multiple electrode current controlling device |
| US3544399A (en) * | 1966-10-26 | 1970-12-01 | Hughes Aircraft Co | Insulated gate field-effect transistor (igfet) with semiconductor gate electrode |
| US3448353A (en) * | 1966-11-14 | 1969-06-03 | Westinghouse Electric Corp | Mos field effect transistor hall effect devices |
| GB1173150A (en) * | 1966-12-13 | 1969-12-03 | Associated Semiconductor Mft | Improvements in Insulated Gate Field Effect Transistors |
| US3569799A (en) * | 1967-01-13 | 1971-03-09 | Ibm | Negative resistance device with controllable switching |
| US3560815A (en) * | 1968-10-10 | 1971-02-02 | Gen Electric | Voltage-variable capacitor with extendible pn junction region |
| US3591836A (en) * | 1969-03-04 | 1971-07-06 | North American Rockwell | Field effect conditionally switched capacitor |
| US3816769A (en) * | 1969-12-17 | 1974-06-11 | Integrated Photomatrix Ltd | Method and circuit element for the selective charging of a semiconductor diffusion region |
| US3604990A (en) * | 1970-04-01 | 1971-09-14 | Gen Electric | Smoothly changing voltage-variable capacitor having an extendible pn junction region |
| US3648122A (en) * | 1970-06-19 | 1972-03-07 | Bell Telephone Labor Inc | Metal-insulator-metal solid-state rectifier |
| US3808515A (en) * | 1972-11-03 | 1974-04-30 | Bell Telephone Labor Inc | Chopper devices and circuits |
| US3831187A (en) * | 1973-04-11 | 1974-08-20 | Rca Corp | Thyristor having capacitively coupled control electrode |
| US3831186A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode device employing barrier emitters |
| US3831185A (en) * | 1973-04-25 | 1974-08-20 | Sperry Rand Corp | Controlled inversion bistable switching diode |
| JPS5681972A (en) * | 1979-12-07 | 1981-07-04 | Toshiba Corp | Mos type field effect transistor |
| US4422440A (en) * | 1980-02-25 | 1983-12-27 | Russell Robert J | Automatic draft controller |
| US4341344A (en) * | 1980-02-25 | 1982-07-27 | Russell Robert J | Automatic draft controller |
| US4370669A (en) * | 1980-07-16 | 1983-01-25 | General Motors Corporation | Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit |
| US4694313A (en) * | 1985-02-19 | 1987-09-15 | Harris Corporation | Conductivity modulated semiconductor structure |
| US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
| WO2012085627A1 (en) | 2010-12-23 | 2012-06-28 | Universitat Politecnica De Catalunya | Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation |
| KR102245295B1 (ko) | 2014-10-08 | 2021-04-27 | 삼성전자주식회사 | 실리신 물질층 및 이를 포함하는 전자 소자 |
| KR102395778B1 (ko) | 2015-09-10 | 2022-05-09 | 삼성전자주식회사 | 나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자 |
| KR102634054B1 (ko) | 2018-08-06 | 2024-02-06 | 삼성전자주식회사 | 일렉트라이드 전극을 포함하는 트랜지스터 |
| KR20200046840A (ko) | 2018-10-25 | 2020-05-07 | 삼성전자주식회사 | 실리신 전자 소자 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL121810C (US07935154-20110503-C00006.png) * | 1955-11-04 | |||
| US2918628A (en) * | 1957-01-23 | 1959-12-22 | Otmar M Stuetzer | Semiconductor amplifier |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| US3074804A (en) * | 1957-11-29 | 1963-01-22 | Nat Res Dev | Intergranular barrier layer dielectric ceramic compositions and the method of production thereof |
| US2991371A (en) * | 1959-06-15 | 1961-07-04 | Sprague Electric Co | Variable capacitor |
| NL265382A (US07935154-20110503-C00006.png) * | 1960-03-08 | |||
| NL267831A (US07935154-20110503-C00006.png) * | 1960-08-17 |
-
0
- NL NL265382D patent/NL265382A/xx unknown
-
1960
- 1960-03-08 US US13688A patent/US3206670A/en not_active Expired - Lifetime
- 1960-05-31 US US32801A patent/US3102230A/en not_active Expired - Lifetime
-
1961
- 1961-05-19 DE DE1439921A patent/DE1439921B2/de not_active Ceased
- 1961-05-25 GB GB18939/61A patent/GB992003A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1439921A1 (de) | 1968-11-28 |
| NL265382A (US07935154-20110503-C00006.png) | |
| GB992003A (en) | 1965-05-12 |
| US3102230A (en) | 1963-08-27 |
| US3206670A (en) | 1965-09-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BHV | Refusal |