DE1437435C3 - Hochfrequenzverstärker mit Feldeffekttransistor - Google Patents

Hochfrequenzverstärker mit Feldeffekttransistor

Info

Publication number
DE1437435C3
DE1437435C3 DE1437435A DER0037592A DE1437435C3 DE 1437435 C3 DE1437435 C3 DE 1437435C3 DE 1437435 A DE1437435 A DE 1437435A DE R0037592 A DER0037592 A DE R0037592A DE 1437435 C3 DE1437435 C3 DE 1437435C3
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
electrode
source
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1437435A
Other languages
German (de)
English (en)
Other versions
DE1437435A1 (de
DE1437435B2 (de
Inventor
Gerald Earl Hopewell N.J. Theriault
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1437435A1 publication Critical patent/DE1437435A1/de
Publication of DE1437435B2 publication Critical patent/DE1437435B2/de
Application granted granted Critical
Publication of DE1437435C3 publication Critical patent/DE1437435C3/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • D—TEXTILES; PAPER
    • D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06B—TREATING TEXTILE MATERIALS USING LIQUIDS, GASES OR VAPOURS
    • D06B23/00—Component parts, details, or accessories of apparatus or machines, specially adapted for the treating of textile materials, not restricted to a particular kind of apparatus, provided for in groups D06B1/00 - D06B21/00
    • D06B23/10—Devices for dyeing samples
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/20—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator
    • H03B5/24—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising resistance and either capacitance or inductance, e.g. phase-shift oscillator active element in amplifier being semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
    • H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
    • H03D7/12—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes
    • H03D7/125—Transference of modulation from one carrier to another, e.g. frequency-changing by means of semiconductor devices having more than two electrodes with field effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/191—Tuned amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/83125—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET] the IGFETs characterised by having shared source or drain regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Textile Engineering (AREA)
  • Amplifiers (AREA)
  • Junction Field-Effect Transistors (AREA)
DE1437435A 1963-04-01 1964-04-01 Hochfrequenzverstärker mit Feldeffekttransistor Expired DE1437435C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US269525A US3268827A (en) 1963-04-01 1963-04-01 Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability

Publications (3)

Publication Number Publication Date
DE1437435A1 DE1437435A1 (de) 1972-07-27
DE1437435B2 DE1437435B2 (de) 1978-07-06
DE1437435C3 true DE1437435C3 (de) 1985-04-04

Family

ID=23027641

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1437435A Expired DE1437435C3 (de) 1963-04-01 1964-04-01 Hochfrequenzverstärker mit Feldeffekttransistor

Country Status (8)

Country Link
US (1) US3268827A (OSRAM)
BE (1) BE645953A (OSRAM)
BR (1) BR6457999D0 (OSRAM)
DE (1) DE1437435C3 (OSRAM)
FR (1) FR1397523A (OSRAM)
GB (1) GB1060242A (OSRAM)
NL (1) NL6403409A (OSRAM)
SE (1) SE318314B (OSRAM)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3383569A (en) * 1964-03-26 1968-05-14 Suisse Horlogerie Transistor-capacitor integrated circuit structure
US3390314A (en) * 1964-10-30 1968-06-25 Rca Corp Semiconductor translating circuit
US3414781A (en) * 1965-01-22 1968-12-03 Hughes Aircraft Co Field effect transistor having interdigitated source and drain and overlying, insulated gate
GB1175601A (en) * 1966-03-28 1969-12-23 Matsushita Electronics Corp Insulated-Gate Field-Effect Transistor
US3553492A (en) * 1967-09-05 1971-01-05 Sierra Research Corp Voltage sampling and follower amplifier
NL6808352A (OSRAM) * 1968-06-14 1969-12-16
US3534294A (en) * 1968-06-24 1970-10-13 Philips Corp Fet oscillator with constant current source for frequency stabilization
US3516003A (en) * 1968-07-30 1970-06-02 Bailey Meter Co High-gain single-stage a.c. cascode amplifier circuit
US3575614A (en) * 1968-12-13 1971-04-20 North American Rockwell Low voltage level mos interface circuit
DE1904787B2 (de) * 1969-01-31 1977-07-21 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Elektrisches speicherelement und betrieb desselben
US3789312A (en) * 1972-04-03 1974-01-29 Ibm Threshold independent linear amplifier
US4001860A (en) * 1973-11-12 1977-01-04 Signetics Corporation Double diffused metal oxide semiconductor structure with isolated source and drain and method
JPS5875922A (ja) * 1981-10-30 1983-05-07 Toshiba Corp 半導体スイツチ回路
DE3326957C2 (de) * 1983-07-27 1986-07-31 Telefunken electronic GmbH, 7100 Heilbronn Integrierte Schaltung
US6496074B1 (en) 2000-09-28 2002-12-17 Koninklijke Philips Electronics N.V. Cascode bootstrapped analog power amplifier circuit
US6498533B1 (en) 2000-09-28 2002-12-24 Koninklijke Philips Electronics N.V. Bootstrapped dual-gate class E amplifier circuit
US7701270B2 (en) * 2007-08-03 2010-04-20 International Business Machines Corporation Structure for a high output resistance, wide swing charge pump
US7583116B2 (en) * 2007-08-03 2009-09-01 International Business Machines Corporation High output resistance, wide swing charge pump

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2586080A (en) * 1949-10-11 1952-02-19 Bell Telephone Labor Inc Semiconductive signal translating device
US3010033A (en) * 1958-01-02 1961-11-21 Clevite Corp Field effect transistor
NL267831A (OSRAM) * 1960-08-17
US3135926A (en) * 1960-09-19 1964-06-02 Gen Motors Corp Composite field effect transistor
NL274830A (OSRAM) * 1961-04-12

Also Published As

Publication number Publication date
FR1397523A (fr) 1965-04-30
BE645953A (OSRAM) 1964-07-16
NL6403409A (OSRAM) 1964-10-02
DE1437435A1 (de) 1972-07-27
GB1060242A (en) 1967-03-01
US3268827A (en) 1966-08-23
SE318314B (OSRAM) 1969-12-08
BR6457999D0 (pt) 1973-06-14
DE1437435B2 (de) 1978-07-06

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Legal Events

Date Code Title Description
OI Miscellaneous see part 1
OI Miscellaneous see part 1
8281 Inventor (new situation)

Free format text: CARLSON, DAVID JOHN, INDIANAPOLIS, IND., US THERIAULT, GERALD EARL, HOPEWELL, N.J., US

C3 Grant after two publication steps (3rd publication)