DE1255717B - Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen - Google Patents

Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen

Info

Publication number
DE1255717B
DE1255717B DEN19529A DEN0019529A DE1255717B DE 1255717 B DE1255717 B DE 1255717B DE N19529 A DEN19529 A DE N19529A DE N0019529 A DEN0019529 A DE N0019529A DE 1255717 B DE1255717 B DE 1255717B
Authority
DE
Germany
Prior art keywords
circuit
resistance elements
memory circuit
memory
series
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEN19529A
Other languages
German (de)
English (en)
Inventor
Kazuo Husimi
Tsuneori Koshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Publication of DE1255717B publication Critical patent/DE1255717B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T74/00—Machine element or mechanism
    • Y10T74/19—Gearing
    • Y10T74/19642—Directly cooperating gears
    • Y10T74/19679—Spur

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Devices For Supply Of Signal Current (AREA)
DEN19529A 1960-02-15 1961-02-01 Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen Pending DE1255717B (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP439760 1960-02-15
JP439860 1960-02-15

Publications (1)

Publication Number Publication Date
DE1255717B true DE1255717B (de) 1967-12-07

Family

ID=26338146

Family Applications (1)

Application Number Title Priority Date Filing Date
DEN19529A Pending DE1255717B (de) 1960-02-15 1961-02-01 Speicherschaltung mit Dynatron-Charakter aufweisenden, gerichteten Widerstandselementen

Country Status (6)

Country Link
US (1) US3198957A (OSRAM)
CH (1) CH396093A (OSRAM)
DE (1) DE1255717B (OSRAM)
FR (1) FR1280323A (OSRAM)
GB (1) GB924203A (OSRAM)
NL (1) NL261224A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319078A (en) * 1964-03-30 1967-05-09 Sylvania Electric Prod Pulse burst generator employing plural locked pair tunnel diode networks and delay means
US3445682A (en) * 1965-12-20 1969-05-20 Ibm Signals employing a tristable tunnel diode sensing circuit
US4376986A (en) * 1981-09-30 1983-03-15 Burroughs Corporation Double Lambda diode memory cell
GB8510393D0 (en) * 1985-04-24 1993-05-26 British Aerospace Radiation hardened circuit

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1100692B (de) 1959-01-27 1961-03-02 Rca Corp Bistabile Schaltung
DE1227944B (de) 1959-09-08 1966-11-03 Rca Corp Speichervorrichtung mit einer bistabil vorgespannten Tunneldiode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2614140A (en) * 1950-05-26 1952-10-14 Bell Telephone Labor Inc Trigger circuit
US2986724A (en) * 1959-05-27 1961-05-30 Bell Telephone Labor Inc Negative resistance oscillator
US3138723A (en) * 1959-11-23 1964-06-23 Zh Parametron Kenkyujo Dynamic storage circuit utilizing two tunnel diodes and reflective delay line

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1100692B (de) 1959-01-27 1961-03-02 Rca Corp Bistabile Schaltung
DE1227944B (de) 1959-09-08 1966-11-03 Rca Corp Speichervorrichtung mit einer bistabil vorgespannten Tunneldiode

Also Published As

Publication number Publication date
FR1280323A (fr) 1961-12-29
CH396093A (de) 1965-07-31
US3198957A (en) 1965-08-03
NL261224A (OSRAM)
GB924203A (en) 1963-04-24

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Legal Events

Date Code Title Description
E77 Valid patent as to the heymanns-index 1977