NL261224A - - Google Patents

Info

Publication number
NL261224A
NL261224A NL261224DA NL261224A NL 261224 A NL261224 A NL 261224A NL 261224D A NL261224D A NL 261224DA NL 261224 A NL261224 A NL 261224A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL261224A publication Critical patent/NL261224A/xx

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T74/00—Machine element or mechanism
    • Y10T74/19—Gearing
    • Y10T74/19642—Directly cooperating gears
    • Y10T74/19679—Spur

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Devices For Supply Of Signal Current (AREA)
NL261224D 1960-02-15 NL261224A (OSRAM)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP439860 1960-02-15
JP439760 1960-02-15

Publications (1)

Publication Number Publication Date
NL261224A true NL261224A (OSRAM)

Family

ID=26338146

Family Applications (1)

Application Number Title Priority Date Filing Date
NL261224D NL261224A (OSRAM) 1960-02-15

Country Status (6)

Country Link
US (1) US3198957A (OSRAM)
CH (1) CH396093A (OSRAM)
DE (1) DE1255717B (OSRAM)
FR (1) FR1280323A (OSRAM)
GB (1) GB924203A (OSRAM)
NL (1) NL261224A (OSRAM)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319078A (en) * 1964-03-30 1967-05-09 Sylvania Electric Prod Pulse burst generator employing plural locked pair tunnel diode networks and delay means
US3445682A (en) * 1965-12-20 1969-05-20 Ibm Signals employing a tristable tunnel diode sensing circuit
US4376986A (en) * 1981-09-30 1983-03-15 Burroughs Corporation Double Lambda diode memory cell
GB8510393D0 (en) * 1985-04-24 1993-05-26 British Aerospace Radiation hardened circuit

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2614140A (en) * 1950-05-26 1952-10-14 Bell Telephone Labor Inc Trigger circuit
NL247747A (OSRAM) 1959-01-27
US2986724A (en) * 1959-05-27 1961-05-30 Bell Telephone Labor Inc Negative resistance oscillator
US3089126A (en) 1959-09-08 1963-05-07 Rca Corp Negative resistance diode memory
US3138723A (en) * 1959-11-23 1964-06-23 Zh Parametron Kenkyujo Dynamic storage circuit utilizing two tunnel diodes and reflective delay line

Also Published As

Publication number Publication date
DE1255717B (de) 1967-12-07
FR1280323A (fr) 1961-12-29
US3198957A (en) 1965-08-03
GB924203A (en) 1963-04-24
CH396093A (de) 1965-07-31

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