FR1280323A - élément de mémoire à vitesse élevée - Google Patents

élément de mémoire à vitesse élevée

Info

Publication number
FR1280323A
FR1280323A FR852365A FR852365A FR1280323A FR 1280323 A FR1280323 A FR 1280323A FR 852365 A FR852365 A FR 852365A FR 852365 A FR852365 A FR 852365A FR 1280323 A FR1280323 A FR 1280323A
Authority
FR
France
Prior art keywords
high speed
memory element
speed memory
speed
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR852365A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Application granted granted Critical
Publication of FR1280323A publication Critical patent/FR1280323A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/313—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic
    • H03K3/315—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of semiconductor devices with two electrodes, one or two potential barriers, and exhibiting a negative resistance characteristic the devices being tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/58—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being tunnel diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T74/00—Machine element or mechanism
    • Y10T74/19—Gearing
    • Y10T74/19642—Directly cooperating gears
    • Y10T74/19679—Spur

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Devices For Supply Of Signal Current (AREA)
FR852365A 1960-02-15 1961-02-10 élément de mémoire à vitesse élevée Expired FR1280323A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP439760 1960-02-15
JP439860 1960-02-15

Publications (1)

Publication Number Publication Date
FR1280323A true FR1280323A (fr) 1961-12-29

Family

ID=26338146

Family Applications (1)

Application Number Title Priority Date Filing Date
FR852365A Expired FR1280323A (fr) 1960-02-15 1961-02-10 élément de mémoire à vitesse élevée

Country Status (6)

Country Link
US (1) US3198957A (fr)
CH (1) CH396093A (fr)
DE (1) DE1255717B (fr)
FR (1) FR1280323A (fr)
GB (1) GB924203A (fr)
NL (1) NL261224A (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3319078A (en) * 1964-03-30 1967-05-09 Sylvania Electric Prod Pulse burst generator employing plural locked pair tunnel diode networks and delay means
US3445682A (en) * 1965-12-20 1969-05-20 Ibm Signals employing a tristable tunnel diode sensing circuit
US4376986A (en) * 1981-09-30 1983-03-15 Burroughs Corporation Double Lambda diode memory cell
GB8510393D0 (en) * 1985-04-24 1993-05-26 British Aerospace Radiation hardened circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2614140A (en) * 1950-05-26 1952-10-14 Bell Telephone Labor Inc Trigger circuit
US2986724A (en) * 1959-05-27 1961-05-30 Bell Telephone Labor Inc Negative resistance oscillator
US3138723A (en) * 1959-11-23 1964-06-23 Zh Parametron Kenkyujo Dynamic storage circuit utilizing two tunnel diodes and reflective delay line

Also Published As

Publication number Publication date
GB924203A (en) 1963-04-24
DE1255717B (de) 1967-12-07
CH396093A (de) 1965-07-31
US3198957A (en) 1965-08-03
NL261224A (fr)

Similar Documents

Publication Publication Date Title
FR1306852A (fr) Imprimeuse à grande vitesse
CH383225A (de) Ballenraspel
CH383226A (de) Ballenraspel
BE592629A (fr) Elément de circuit.
FR1280323A (fr) élément de mémoire à vitesse élevée
CH376403A (de) Ballenraspel
FR1264019A (fr) Nouvel élément de revêtement
IT658006B (it) Apparecchio termo-converttore ad eiezione
FR1423606A (fr) élément réfrigérateur
FR1277363A (fr) Comptoir-présentoir de magasin
FR1271394A (fr) Mécanisme réducteur de vitesse à variation hydraulique
AT220044B (de) Mehrschichtenski
FR1286476A (fr) élément de circuit
FR1256600A (fr) Variateur de vitesse
FR1256007A (fr) élément de toiture
FR29M (fr) Chlorobenzylate de la n-diéthylaminoéthyl-oxy-3 naphtylamide-2.
FR1298046A (fr) élément logique perfectionné
FR1270318A (fr) élément primaire
FR1282080A (fr) élément de dérivation
FR1254954A (fr) Nouvel élément de construction
DK101729C (da) Sødemiddel.
FR1308122A (fr) élément semi-conducteur
FR1290672A (fr) Elément logique à semi-conducteurs
BE587748A (fr) Planeuse-rayonneuse.
BE591090R (fr) Elément de construction.