DE1228003B - Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit - Google Patents

Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit

Info

Publication number
DE1228003B
DE1228003B DEJ23184A DEJ0023184A DE1228003B DE 1228003 B DE1228003 B DE 1228003B DE J23184 A DEJ23184 A DE J23184A DE J0023184 A DEJ0023184 A DE J0023184A DE 1228003 B DE1228003 B DE 1228003B
Authority
DE
Germany
Prior art keywords
diffused
zone
semiconductor body
alloyed
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEJ23184A
Other languages
German (de)
English (en)
Inventor
Dipl-Phys Dr Reinhard Dahlberg
Robert Richardson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Micronas GmbH
Original Assignee
Deutsche ITT Industries GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to GB1052673D priority Critical patent/GB1052673A/en
Application filed by Deutsche ITT Industries GmbH filed Critical Deutsche ITT Industries GmbH
Priority to DEJ23184A priority patent/DE1228003B/de
Priority to DEJ23302A priority patent/DE1248165B/de
Priority to FR949320A priority patent/FR1372145A/fr
Priority to FR949449A priority patent/FR84496E/fr
Priority to GB6593/64A priority patent/GB1033838A/en
Publication of DE1228003B publication Critical patent/DE1228003B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/20—Breakdown diodes, e.g. avalanche diodes
    • H10D8/25—Zener diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50—Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DEJ23184A 1963-02-15 1963-02-15 Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit Pending DE1228003B (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB1052673D GB1052673A (https=) 1963-02-15
DEJ23184A DE1228003B (de) 1963-02-15 1963-02-15 Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
DEJ23302A DE1248165B (de) 1963-02-15 1963-03-07 Zenerdiode mit definierter Abbruchspannung
FR949320A FR1372145A (fr) 1963-02-15 1963-10-02 Procédé pour l'établissement d'un passage p-n dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus
FR949449A FR84496E (fr) 1963-02-15 1963-10-03 Procédé pour l'établissement d'un passage pn dans un corps semi-conducteur et éléments semi-conducteurs conformes à ceux ainsi obtenus
GB6593/64A GB1033838A (en) 1963-02-15 1964-02-17 Production of pn-junctions

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEJ23184A DE1228003B (de) 1963-02-15 1963-02-15 Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
DEJ23302A DE1248165B (de) 1963-02-15 1963-03-07 Zenerdiode mit definierter Abbruchspannung

Publications (1)

Publication Number Publication Date
DE1228003B true DE1228003B (de) 1966-11-03

Family

ID=25982423

Family Applications (2)

Application Number Title Priority Date Filing Date
DEJ23184A Pending DE1228003B (de) 1963-02-15 1963-02-15 Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
DEJ23302A Pending DE1248165B (de) 1963-02-15 1963-03-07 Zenerdiode mit definierter Abbruchspannung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DEJ23302A Pending DE1248165B (de) 1963-02-15 1963-03-07 Zenerdiode mit definierter Abbruchspannung

Country Status (2)

Country Link
DE (2) DE1228003B (https=)
GB (2) GB1033838A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10159498A1 (de) * 2001-12-04 2003-06-12 Bosch Gmbh Robert Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1262176A (fr) * 1959-07-30 1961-05-26 Fairchild Semiconductor Dispositif semi-conducteur et conducteur
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
FR1279484A (fr) * 1959-11-13 1961-12-22 Siemens Ag Dispositif semi-conducteur à monocristal

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
FR1262176A (fr) * 1959-07-30 1961-05-26 Fairchild Semiconductor Dispositif semi-conducteur et conducteur
FR1279484A (fr) * 1959-11-13 1961-12-22 Siemens Ag Dispositif semi-conducteur à monocristal

Also Published As

Publication number Publication date
DE1248165B (de) 1967-08-24
GB1052673A (https=)
GB1033838A (en) 1966-06-22

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