FR1279484A - Dispositif semi-conducteur à monocristal - Google Patents

Dispositif semi-conducteur à monocristal

Info

Publication number
FR1279484A
FR1279484A FR843670A FR843670A FR1279484A FR 1279484 A FR1279484 A FR 1279484A FR 843670 A FR843670 A FR 843670A FR 843670 A FR843670 A FR 843670A FR 1279484 A FR1279484 A FR 1279484A
Authority
FR
France
Prior art keywords
semiconductor device
single crystal
crystal semiconductor
semiconductor
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR843670A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DES65833A external-priority patent/DE1208412B/de
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Priority to FR843670A priority Critical patent/FR1279484A/fr
Application granted granted Critical
Publication of FR1279484A publication Critical patent/FR1279484A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
FR843670A 1959-11-13 1960-11-10 Dispositif semi-conducteur à monocristal Expired FR1279484A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR843670A FR1279484A (fr) 1959-11-13 1960-11-10 Dispositif semi-conducteur à monocristal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES65833A DE1208412B (de) 1959-11-13 1959-11-13 Elektrisches Halbleiterbauelement mit mindestens einem an die Oberflaeche des Halbleiterkoerpers tretenden pn-UEbergang und Verfahren zum Herstellen eines solchen Bauelements
FR843670A FR1279484A (fr) 1959-11-13 1960-11-10 Dispositif semi-conducteur à monocristal

Publications (1)

Publication Number Publication Date
FR1279484A true FR1279484A (fr) 1961-12-22

Family

ID=25995905

Family Applications (1)

Application Number Title Priority Date Filing Date
FR843670A Expired FR1279484A (fr) 1959-11-13 1960-11-10 Dispositif semi-conducteur à monocristal

Country Status (1)

Country Link
FR (1) FR1279484A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226612A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device and method
DE1228003B (de) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
US3366850A (en) * 1963-09-10 1968-01-30 Solid State Radiations Inc P-n junction device with interstitial impurity means to increase the reverse breakdown voltage
DE1293908B (de) * 1963-03-07 1969-04-30 Northern Electric Co Halbleiterbauelement und Verfahren zu dessen Herstellung
DE1285623C2 (de) * 1964-04-30 1973-10-04 Elektrolumineszenzdiode

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3226612A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device and method
US3226613A (en) * 1962-08-23 1965-12-28 Motorola Inc High voltage semiconductor device
US3226611A (en) * 1962-08-23 1965-12-28 Motorola Inc Semiconductor device
US3226614A (en) * 1962-08-23 1965-12-28 Motorola Inc High voltage semiconductor device
DE1228003B (de) * 1963-02-15 1966-11-03 Itt Ind Ges Mit Beschraenkter Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
DE1248165B (de) * 1963-02-15 1967-08-24 Itt Ind Ges Mit Beschraenkter Zenerdiode mit definierter Abbruchspannung
DE1293908B (de) * 1963-03-07 1969-04-30 Northern Electric Co Halbleiterbauelement und Verfahren zu dessen Herstellung
US3366850A (en) * 1963-09-10 1968-01-30 Solid State Radiations Inc P-n junction device with interstitial impurity means to increase the reverse breakdown voltage
DE1285623C2 (de) * 1964-04-30 1973-10-04 Elektrolumineszenzdiode
DE1285623B (de) * 1964-04-30 1973-10-04 Elektrolumineszenzdiode

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