GB1033838A - Production of pn-junctions - Google Patents
Production of pn-junctionsInfo
- Publication number
- GB1033838A GB1033838A GB6593/64A GB659364A GB1033838A GB 1033838 A GB1033838 A GB 1033838A GB 6593/64 A GB6593/64 A GB 6593/64A GB 659364 A GB659364 A GB 659364A GB 1033838 A GB1033838 A GB 1033838A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- layer
- diffused
- semi
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/04—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/20—Breakdown diodes, e.g. avalanche diodes
- H10D8/25—Zener diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEJ23184A DE1228003B (de) | 1963-02-15 | 1963-02-15 | Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit |
| DEJ23302A DE1248165B (de) | 1963-02-15 | 1963-03-07 | Zenerdiode mit definierter Abbruchspannung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1033838A true GB1033838A (en) | 1966-06-22 |
Family
ID=25982423
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1052673D Active GB1052673A (https=) | 1963-02-15 | ||
| GB6593/64A Expired GB1033838A (en) | 1963-02-15 | 1964-02-17 | Production of pn-junctions |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1052673D Active GB1052673A (https=) | 1963-02-15 |
Country Status (2)
| Country | Link |
|---|---|
| DE (2) | DE1228003B (https=) |
| GB (2) | GB1033838A (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2992471A (en) * | 1958-11-04 | 1961-07-18 | Bell Telephone Labor Inc | Formation of p-n junctions in p-type semiconductors |
| FR1262176A (fr) * | 1959-07-30 | 1961-05-26 | Fairchild Semiconductor | Dispositif semi-conducteur et conducteur |
| FR1279484A (fr) * | 1959-11-13 | 1961-12-22 | Siemens Ag | Dispositif semi-conducteur à monocristal |
-
0
- GB GB1052673D patent/GB1052673A/en active Active
-
1963
- 1963-02-15 DE DEJ23184A patent/DE1228003B/de active Pending
- 1963-03-07 DE DEJ23302A patent/DE1248165B/de active Pending
-
1964
- 1964-02-17 GB GB6593/64A patent/GB1033838A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE1248165B (de) | 1967-08-24 |
| GB1052673A (https=) | |
| DE1228003B (de) | 1966-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| GB1060303A (en) | Semiconductor element and device and method of fabricating the same | |
| GB1270697A (en) | Methods of forming semiconductor devices | |
| GB1522291A (en) | Semiconductor device manufacture | |
| GB1196272A (en) | High Voltage Planar Semiconductor Devices | |
| GB1058240A (en) | Semiconductor device | |
| GB1073749A (en) | Improvements in or relating to semiconductor electromechanical transducers | |
| GB1109371A (en) | Metal-oxide-semiconductor field effect transistor | |
| GB1073551A (en) | Integrated circuit comprising a diode and method of making the same | |
| GB1243355A (en) | Improvements in and relating to semiconductor devices | |
| GB1145121A (en) | Improvements in and relating to transistors | |
| GB1030048A (en) | Improvements in or relating to processes for producing a semiconductor unit having apn-junction | |
| GB1043286A (en) | Improvements in and relating to semiconductor devices | |
| GB1372607A (en) | Semiconductor devices | |
| GB1137372A (en) | Improvements in or relating to the manufacture of transistors | |
| GB1221882A (en) | Method of diffusing impurities into a limited region of a semiconductor body. | |
| IE33394L (en) | Pn semiconductor device | |
| GB1296562A (https=) | ||
| GB1033838A (en) | Production of pn-junctions | |
| GB1076371A (en) | Semiconductor device with auxiliary junction for enhancing breakdown voltage of primary junction | |
| GB1053406A (https=) | ||
| GB999431A (en) | Improvements in or relating to transistors | |
| GB1127161A (en) | Improvements in or relating to diffused base transistors | |
| GB1209310A (en) | High voltage n-p-n transistors | |
| GB1110321A (en) | Improvements in or relating to semiconductor devices | |
| GB940681A (en) | Semiconductor devices |