GB1052673A - - Google Patents

Info

Publication number
GB1052673A
GB1052673A GB1052673DA GB1052673A GB 1052673 A GB1052673 A GB 1052673A GB 1052673D A GB1052673D A GB 1052673DA GB 1052673 A GB1052673 A GB 1052673A
Authority
GB
United Kingdom
Prior art keywords
region
wafer
march
concentration gradient
alloying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of GB1052673A publication Critical patent/GB1052673A/en
Active legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00Bipolar junction transistors [BJT]
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/04Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the liquid state
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/20Breakdown diodes, e.g. avalanche diodes
    • H10D8/25Zener diodes 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/50Alloying conductive materials with semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
GB1052673D 1963-02-15 Active GB1052673A (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DEJ23184A DE1228003B (de) 1963-02-15 1963-02-15 Transistor hoher Abbruchspannung und hoher Emitterergiebigkeit
DEJ23302A DE1248165B (de) 1963-02-15 1963-03-07 Zenerdiode mit definierter Abbruchspannung

Publications (1)

Publication Number Publication Date
GB1052673A true GB1052673A (https=)

Family

ID=25982423

Family Applications (2)

Application Number Title Priority Date Filing Date
GB1052673D Active GB1052673A (https=) 1963-02-15
GB6593/64A Expired GB1033838A (en) 1963-02-15 1964-02-17 Production of pn-junctions

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB6593/64A Expired GB1033838A (en) 1963-02-15 1964-02-17 Production of pn-junctions

Country Status (2)

Country Link
DE (2) DE1228003B (https=)
GB (2) GB1033838A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002363824B2 (en) * 2001-12-04 2009-05-14 Robert Bosch Gmbh Semiconductor arrangement with a PN transition and method for the production of a semiconductor arrangement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2992471A (en) * 1958-11-04 1961-07-18 Bell Telephone Labor Inc Formation of p-n junctions in p-type semiconductors
FR1262176A (fr) * 1959-07-30 1961-05-26 Fairchild Semiconductor Dispositif semi-conducteur et conducteur
FR1279484A (fr) * 1959-11-13 1961-12-22 Siemens Ag Dispositif semi-conducteur à monocristal

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2002363824B2 (en) * 2001-12-04 2009-05-14 Robert Bosch Gmbh Semiconductor arrangement with a PN transition and method for the production of a semiconductor arrangement

Also Published As

Publication number Publication date
DE1248165B (de) 1967-08-24
DE1228003B (de) 1966-11-03
GB1033838A (en) 1966-06-22

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