ES347417A1 - Un diodo varactor. - Google Patents
Un diodo varactor.Info
- Publication number
- ES347417A1 ES347417A1 ES347417A ES347417A ES347417A1 ES 347417 A1 ES347417 A1 ES 347417A1 ES 347417 A ES347417 A ES 347417A ES 347417 A ES347417 A ES 347417A ES 347417 A1 ES347417 A1 ES 347417A1
- Authority
- ES
- Spain
- Prior art keywords
- region
- layer
- regions
- substrate
- silica
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 10
- 239000000377 silicon dioxide Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
- Element Separation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB52156/66A GB1134928A (en) | 1966-11-22 | 1966-11-22 | Varactor diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES347417A1 true ES347417A1 (es) | 1969-01-16 |
Family
ID=10462847
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES347417A Expired ES347417A1 (es) | 1966-11-22 | 1967-11-21 | Un diodo varactor. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3495137A (es) |
| DE (1) | DE1589701B2 (es) |
| ES (1) | ES347417A1 (es) |
| FR (1) | FR1545163A (es) |
| GB (1) | GB1134928A (es) |
| NL (1) | NL6715894A (es) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4005466A (en) * | 1975-05-07 | 1977-01-25 | Rca Corporation | Planar voltage variable tuning capacitors |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL277300A (es) * | 1961-04-20 | |||
| NL277811A (es) * | 1961-04-27 | 1900-01-01 | ||
| US3163562A (en) * | 1961-08-10 | 1964-12-29 | Bell Telephone Labor Inc | Semiconductor device including differing energy band gap materials |
| US3248614A (en) * | 1961-11-15 | 1966-04-26 | Ibm | Formation of small area junction devices |
-
1966
- 1966-11-22 GB GB52156/66A patent/GB1134928A/en not_active Expired
-
1967
- 1967-11-09 US US681623A patent/US3495137A/en not_active Expired - Lifetime
- 1967-11-11 DE DE19671589701 patent/DE1589701B2/de active Pending
- 1967-11-21 ES ES347417A patent/ES347417A1/es not_active Expired
- 1967-11-22 NL NL6715894A patent/NL6715894A/xx unknown
- 1967-11-22 FR FR129181A patent/FR1545163A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| US3495137A (en) | 1970-02-10 |
| FR1545163A (fr) | 1968-11-08 |
| GB1134928A (en) | 1968-11-27 |
| DE1589701A1 (de) | 1970-04-09 |
| NL6715894A (es) | 1968-05-24 |
| DE1589701B2 (de) | 1972-08-31 |
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