DE1224273B - Vorrichtung zum tiegelfreien Zonenschmelzen - Google Patents

Vorrichtung zum tiegelfreien Zonenschmelzen

Info

Publication number
DE1224273B
DE1224273B DES91655A DES0091655A DE1224273B DE 1224273 B DE1224273 B DE 1224273B DE S91655 A DES91655 A DE S91655A DE S0091655 A DES0091655 A DE S0091655A DE 1224273 B DE1224273 B DE 1224273B
Authority
DE
Germany
Prior art keywords
rod
seed crystal
heating coil
induction heating
melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES91655A
Other languages
German (de)
English (en)
Inventor
Dr Rer Nat Wolfgang Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DES91655A priority Critical patent/DE1224273B/de
Priority to NL6503268A priority patent/NL6503268A/xx
Priority to CH683265A priority patent/CH421902A/de
Priority to US458944A priority patent/US3310384A/en
Priority to BE665683D priority patent/BE665683A/xx
Priority to FR21626A priority patent/FR1444375A/fr
Priority to GB26676/65A priority patent/GB1045664A/en
Publication of DE1224273B publication Critical patent/DE1224273B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/28—Controlling or regulating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
    • Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Silicon Compounds (AREA)
DES91655A 1964-06-23 1964-06-23 Vorrichtung zum tiegelfreien Zonenschmelzen Pending DE1224273B (de)

Priority Applications (7)

Application Number Priority Date Filing Date Title
DES91655A DE1224273B (de) 1964-06-23 1964-06-23 Vorrichtung zum tiegelfreien Zonenschmelzen
NL6503268A NL6503268A (en:Method) 1964-06-23 1965-03-15
CH683265A CH421902A (de) 1964-06-23 1965-05-17 Verfahren zum tiegelfreien Zonenschmelzen und Vorrichtung zur Durchführung des Verfahrens
US458944A US3310384A (en) 1964-06-23 1965-05-26 Method and apparatus for cruciblefree zone melting
BE665683D BE665683A (en:Method) 1964-06-23 1965-06-21
FR21626A FR1444375A (fr) 1964-06-23 1965-06-21 Procédé de fusion de zone sans creuset et dispositif pour sa réalisation
GB26676/65A GB1045664A (en) 1964-06-23 1965-06-23 A process for melting a rod of polycrystalline material zone-by-zone

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES91655A DE1224273B (de) 1964-06-23 1964-06-23 Vorrichtung zum tiegelfreien Zonenschmelzen

Publications (1)

Publication Number Publication Date
DE1224273B true DE1224273B (de) 1966-09-08

Family

ID=7516653

Family Applications (1)

Application Number Title Priority Date Filing Date
DES91655A Pending DE1224273B (de) 1964-06-23 1964-06-23 Vorrichtung zum tiegelfreien Zonenschmelzen

Country Status (6)

Country Link
US (1) US3310384A (en:Method)
BE (1) BE665683A (en:Method)
CH (1) CH421902A (en:Method)
DE (1) DE1224273B (en:Method)
GB (1) GB1045664A (en:Method)
NL (1) NL6503268A (en:Method)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299326B (de) * 1964-02-06 1969-07-17 Computron Corp Speicherverfahren fuer einen aus einer Verzoegerungsleitung aufgebauten dynamischen Speicher und Anordnung zur Durchfuehrung des Verfahrens

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1519908A1 (de) * 1966-12-30 1970-07-02 Siemens Ag Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
DE2508369A1 (de) * 1975-02-26 1976-09-02 Siemens Ag Verfahren zum herstellen von scheibenfoermigen siliciumkoerpern, insbesondere fuer solarzellen
US5033948A (en) * 1989-04-17 1991-07-23 Sandvik Limited Induction melting of metals without a crucible
US5003551A (en) * 1990-05-22 1991-03-26 Inductotherm Corp. Induction melting of metals without a crucible
US5319670A (en) * 1992-07-24 1994-06-07 The United States Of America As Represented By The United States Department Of Energy Velocity damper for electromagnetically levitated materials

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1128413B (de) * 1960-11-25 1962-04-26 Siemens Ag Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2897329A (en) * 1957-09-23 1959-07-28 Sylvania Electric Prod Zone melting apparatus
US3117859A (en) * 1957-12-30 1964-01-14 Westinghouse Electric Corp Zone refining process
US3046100A (en) * 1958-01-20 1962-07-24 Du Pont Zone melting of semiconductive material
US3023091A (en) * 1959-03-02 1962-02-27 Raytheon Co Methods of heating and levitating molten material
US3134700A (en) * 1959-04-22 1964-05-26 Siemens Ag Dislocation removal by a last pass starting at a location displaced from the original seed into the grown crystal
NL112832C (en:Method) * 1959-05-08
US2992311A (en) * 1960-09-28 1961-07-11 Siemens Ag Method and apparatus for floatingzone melting of semiconductor rods

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1128413B (de) * 1960-11-25 1962-04-26 Siemens Ag Verfahren zur Herstellung von zersetzungsfreiem einkristallinem Silicium durch tiegelfreies Zonenschmelzen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1299326B (de) * 1964-02-06 1969-07-17 Computron Corp Speicherverfahren fuer einen aus einer Verzoegerungsleitung aufgebauten dynamischen Speicher und Anordnung zur Durchfuehrung des Verfahrens

Also Published As

Publication number Publication date
NL6503268A (en:Method) 1965-12-24
US3310384A (en) 1967-03-21
GB1045664A (en) 1966-10-12
BE665683A (en:Method) 1965-12-21
CH421902A (de) 1966-10-15

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