DE1218618B - Diffusionsverfahren zum Herstellen eines Transistors - Google Patents
Diffusionsverfahren zum Herstellen eines TransistorsInfo
- Publication number
- DE1218618B DE1218618B DEN16874A DEN0016874A DE1218618B DE 1218618 B DE1218618 B DE 1218618B DE N16874 A DEN16874 A DE N16874A DE N0016874 A DEN0016874 A DE N0016874A DE 1218618 B DE1218618 B DE 1218618B
- Authority
- DE
- Germany
- Prior art keywords
- zone
- impurity
- conductivity
- diffusion
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000009792 diffusion process Methods 0.000 title claims description 45
- 238000004519 manufacturing process Methods 0.000 title description 7
- 239000012535 impurity Substances 0.000 claims description 36
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 23
- 229910052787 antimony Inorganic materials 0.000 claims description 22
- 229910052782 aluminium Inorganic materials 0.000 claims description 19
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 13
- 229910052796 boron Inorganic materials 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 238000011282 treatment Methods 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000370 acceptor Substances 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL229074 | 1958-06-26 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1218618B true DE1218618B (de) | 1966-06-08 |
Family
ID=19751262
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEN16874A Pending DE1218618B (de) | 1958-06-26 | 1959-06-23 | Diffusionsverfahren zum Herstellen eines Transistors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3006789A (en, 2012) |
| DE (1) | DE1218618B (en, 2012) |
| FR (1) | FR1227934A (en, 2012) |
| GB (1) | GB914316A (en, 2012) |
| NL (2) | NL229074A (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1300162B (de) * | 1966-10-05 | 1969-07-31 | Westinghouse Electric Corp | Verfahren zur Herstellung eines Thyristors |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3041214A (en) * | 1959-09-25 | 1962-06-26 | Clevite Corp | Method of forming junction semiconductive devices having thin layers |
| NL268758A (en, 2012) * | 1960-09-20 | |||
| NL275313A (en, 2012) * | 1961-05-10 | |||
| US3362856A (en) * | 1961-11-13 | 1968-01-09 | Transitron Electronic Corp | Silicon transistor device |
| US3165430A (en) * | 1963-01-21 | 1965-01-12 | Siliconix Inc | Method of ultra-fine semiconductor manufacture |
| US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1018588B (de) * | 1955-03-28 | 1957-10-31 | Glaxo Lab Ltd | Verfahren zur Herstellung von Griseofulvin auf biologischem Wege |
| DE1024640B (de) * | 1953-07-22 | 1958-02-20 | Int Standard Electric Corp | Verfahren zur Herstellung von Kristalloden |
| FR1154322A (fr) * | 1955-06-28 | 1958-04-04 | Western Electric Co | Dispositif semi-conducteur |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2841510A (en) * | 1958-07-01 | Method of producing p-n junctions in | ||
| US2823148A (en) * | 1953-03-02 | 1958-02-11 | Rca Corp | Method for removing portions of semiconductor device electrodes |
| BE529698A (en, 2012) * | 1953-06-19 | |||
| BE531626A (en, 2012) * | 1953-09-04 | |||
| US2898247A (en) * | 1955-10-24 | 1959-08-04 | Ibm | Fabrication of diffused junction semi-conductor devices |
| NL222571A (en, 2012) * | 1956-03-05 | 1900-01-01 | ||
| US2910634A (en) * | 1957-05-31 | 1959-10-27 | Ibm | Semiconductor device |
-
0
- NL NL105824D patent/NL105824C/xx active
- NL NL229074D patent/NL229074A/xx unknown
-
1959
- 1959-06-10 US US819313A patent/US3006789A/en not_active Expired - Lifetime
- 1959-06-23 GB GB21493/59A patent/GB914316A/en not_active Expired
- 1959-06-23 DE DEN16874A patent/DE1218618B/de active Pending
- 1959-06-24 FR FR798366A patent/FR1227934A/fr not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1024640B (de) * | 1953-07-22 | 1958-02-20 | Int Standard Electric Corp | Verfahren zur Herstellung von Kristalloden |
| DE1018588B (de) * | 1955-03-28 | 1957-10-31 | Glaxo Lab Ltd | Verfahren zur Herstellung von Griseofulvin auf biologischem Wege |
| FR1154322A (fr) * | 1955-06-28 | 1958-04-04 | Western Electric Co | Dispositif semi-conducteur |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1300162B (de) * | 1966-10-05 | 1969-07-31 | Westinghouse Electric Corp | Verfahren zur Herstellung eines Thyristors |
Also Published As
| Publication number | Publication date |
|---|---|
| US3006789A (en) | 1961-10-31 |
| GB914316A (en) | 1963-01-02 |
| NL229074A (en, 2012) | |
| FR1227934A (fr) | 1960-08-24 |
| NL105824C (en, 2012) |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE2125303C3 (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE2517690B2 (de) | Verfahren zum Herstellen eines Halbleiterbauelements | |
| DE2357376C3 (de) | Mesa-Thyristor und Verfahren zu seiner Herstellung | |
| DE2633714C2 (de) | Integrierte Halbleiter-Schaltungsanordnung mit einem bipolaren Transistor und Verfahren zu ihrer Herstellung | |
| DE1259469B (de) | Verfahren zur Herstellung von inversionsschichtfreien Halbleiteruebergaengen | |
| DE1105524B (de) | Verfahren zur Herstellung einer Halbleiteranordnung, insbesondere eines Transistors,mit einer auflegierten Elektrode | |
| DE1218618B (de) | Diffusionsverfahren zum Herstellen eines Transistors | |
| DE1918054A1 (de) | Verfahren zur Herstellung von Halbleiter-Bauelementen | |
| DE3039009C2 (de) | Sperrschicht-Feldeffekttransistor | |
| DE2219696A1 (de) | Verfahren zur Isolationsbereichsbildung | |
| DE1614827C2 (de) | Verfahren zum Herstellen eines Transistors | |
| DE1916969B2 (de) | Verfahren zur herstellung eines integrierten widerstandes | |
| DE2507038B2 (de) | Inverser Planartransistor und Verfahren zu seiner Herstellung | |
| DE1764829B1 (de) | Planartransistor mit einem scheibenfoermigen halbleiter koerper | |
| DE2120832C3 (de) | Verfahren zum Herstellen eines monolithischen, einen integrierten Schaltkreis bildenden Bauteils mit einem Halbleiterkörper | |
| DE1514656A1 (de) | Verfahren zum Herstellen von Halbleiterkoerpern | |
| DE1090330B (de) | Halbleiteranordnung mit einem Halbleiterkoerper mit zwei Zonen entgegengesetzten Leitfaehigkeitstyps und je einer Elektrode an den beiden Zonen | |
| DE1614286C3 (de) | Halbleiteranordnung und Verfahren zu ihrer Herstellung | |
| DE1769271C3 (de) | Verfahren zum Herstellen einer Festkörperschaltung | |
| DE2541161A1 (de) | Verfahren zur herstellung monolithischer komplementaerer transistoren | |
| DE2602395C3 (de) | Monolithisch integrierter I2 L-Planartransistor und Verfahren zu seiner Herstellung | |
| DE1514865C (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
| DE1194501B (de) | Streifenfoermige durch eine Isolierschicht von dem Halbleiterkoerper getrennte Zuleitung zu einer Elektrode eines Halbleiterbauelements, Halbleiterbauelement und Verfahren zum Herstellen | |
| DE1639055B1 (de) | Verfahren zum herstellen einer halbleiteranordnung und danach hergestellte halbleiteranordnung | |
| DE2028632A1 (de) | Halbleiterbauelement |