DE1215658B - Verfahren zur Herstellung von dotiertem Halbleitermaterial - Google Patents

Verfahren zur Herstellung von dotiertem Halbleitermaterial

Info

Publication number
DE1215658B
DE1215658B DEW23291A DEW0023291A DE1215658B DE 1215658 B DE1215658 B DE 1215658B DE W23291 A DEW23291 A DE W23291A DE W0023291 A DEW0023291 A DE W0023291A DE 1215658 B DE1215658 B DE 1215658B
Authority
DE
Germany
Prior art keywords
semiconductor material
solute
solutes
concentration
gallium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEW23291A
Other languages
German (de)
English (en)
Inventor
William Gardner Pfann
George Sanford Indig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of DE1215658B publication Critical patent/DE1215658B/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S420/00—Alloys or metallic compositions
    • Y10S420/903—Semiconductive
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DEW23291A 1957-06-25 1958-05-08 Verfahren zur Herstellung von dotiertem Halbleitermaterial Pending DE1215658B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US667956A US2861905A (en) 1957-06-25 1957-06-25 Process for controlling excess carrier concentration in a semiconductor

Publications (1)

Publication Number Publication Date
DE1215658B true DE1215658B (de) 1966-05-05

Family

ID=24680369

Family Applications (1)

Application Number Title Priority Date Filing Date
DEW23291A Pending DE1215658B (de) 1957-06-25 1958-05-08 Verfahren zur Herstellung von dotiertem Halbleitermaterial

Country Status (7)

Country Link
US (1) US2861905A (ko)
BE (1) BE567569A (ko)
CH (1) CH402425A (ko)
DE (1) DE1215658B (ko)
FR (1) FR1208294A (ko)
GB (1) GB871839A (ko)
NL (2) NL112556C (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3070465A (en) * 1957-07-26 1962-12-25 Sony Corp Method of manufacturing a grown type semiconductor device
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL109018C (ko) * 1960-01-28
US3248677A (en) * 1961-10-27 1966-04-26 Ibm Temperature compensated semiconductor resistor
BE632279A (ko) * 1962-05-14
DE3049376A1 (de) 1980-12-29 1982-07-29 Heliotronic Forschungs- und Entwicklungsgesellschaft für Solarzellen-Grundstoffe mbH, 8263 Burghausen Verfahren zur herstellung vertikaler pn-uebergaenge beim ziehen von siliciumscheiben aus einer siliciumschmelze
JPS5914440B2 (ja) * 1981-09-18 1984-04-04 住友電気工業株式会社 ＣａＡｓ単結晶への硼素のド−ピング方法
CN106222742B (zh) * 2016-09-12 2019-01-29 江西赛维Ldk太阳能高科技有限公司 一种晶体硅及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE528916A (ko) * 1953-05-18

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE528916A (ko) * 1953-05-18

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10724148B2 (en) 2014-01-21 2020-07-28 Infineon Technologies Ag Silicon ingot and method of manufacturing a silicon ingot
US10337117B2 (en) 2014-11-07 2019-07-02 Infineon Technologies Ag Method of manufacturing a silicon ingot and silicon ingot
US11242616B2 (en) 2014-11-07 2022-02-08 Infineon Technologies Ag Silicon ingot

Also Published As

Publication number Publication date
NL229017A (ko) 1900-01-01
CH402425A (fr) 1965-11-15
FR1208294A (fr) 1960-02-23
US2861905A (en) 1958-11-25
NL112556C (ko) 1900-01-01
BE567569A (ko) 1900-01-01
GB871839A (en) 1961-07-05

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