DE1166161B - Verfahren zur Herstellung von elektrisch leitendem, kubischem Bornitrid - Google Patents

Verfahren zur Herstellung von elektrisch leitendem, kubischem Bornitrid

Info

Publication number
DE1166161B
DE1166161B DEG31336A DEG0031336A DE1166161B DE 1166161 B DE1166161 B DE 1166161B DE G31336 A DEG31336 A DE G31336A DE G0031336 A DEG0031336 A DE G0031336A DE 1166161 B DE1166161 B DE 1166161B
Authority
DE
Germany
Prior art keywords
boron nitride
beryllium
cubic boron
tube
nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEG31336A
Other languages
German (de)
English (en)
Inventor
Robert Henry Wentorf Jun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE1166161B publication Critical patent/DE1166161B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/583—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride
    • C04B35/5831—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on boron nitride based on cubic boron nitrides or Wurtzitic boron nitrides, including crystal structure transformation of powder
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/40—Electric properties
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/932—Boron nitride semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12576—Boride, carbide or nitride component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)
  • Catalysts (AREA)
DEG31336A 1960-01-18 1961-01-09 Verfahren zur Herstellung von elektrisch leitendem, kubischem Bornitrid Pending DE1166161B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2978A US3078232A (en) 1960-01-18 1960-01-18 Process for making conducting cubic boron nitride and product therefrom

Publications (1)

Publication Number Publication Date
DE1166161B true DE1166161B (de) 1964-03-26

Family

ID=21703477

Family Applications (1)

Application Number Title Priority Date Filing Date
DEG31336A Pending DE1166161B (de) 1960-01-18 1961-01-09 Verfahren zur Herstellung von elektrisch leitendem, kubischem Bornitrid

Country Status (5)

Country Link
US (1) US3078232A (enExample)
BE (1) BE599144R (enExample)
DE (1) DE1166161B (enExample)
GB (1) GB973822A (enExample)
NL (2) NL260152A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241979A1 (de) * 1981-11-12 1983-06-01 Showa Denko K.K., Tokyo Verbindung vom bornitridtyp, verfahren zu deren herstellung und verfahren zur herstellung von kubischem bornitrid unter verwendung derselben

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL280732A (enExample) * 1961-07-10
US3188537A (en) * 1961-08-31 1965-06-08 Gen Electric Device for asymmetric conduct of current
US3435398A (en) * 1966-04-19 1969-03-25 Gen Electric Thermistor device and method of producing said device
JPS5232900A (en) * 1975-09-10 1977-03-12 Hitachi Ltd Process for production of cubic boron nitride
US4875967A (en) * 1987-05-01 1989-10-24 National Institute For Research In Inorganic Materials Method for growing a single crystal of cubic boron nitride semiconductor and method for forming a p-n junction thereof, and light emitting element
JPH01224039A (ja) * 1988-03-03 1989-09-07 Sumitomo Electric Ind Ltd 立方晶窒化硼素ｐ−ｎ接合体の作製方法
US5185217A (en) * 1989-09-08 1993-02-09 Toyota Jidosha Kabushiki Kaisha Relatively displacing apparatus
US5942148A (en) * 1997-12-24 1999-08-24 Preston; Kenneth G. Nitride compacts
US7014826B2 (en) * 2001-03-27 2006-03-21 Showa Dendo K.K. Method for producing cubic boron nitride and product obtained through the method

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL67322C (enExample) * 1941-12-19
DE970420C (de) * 1951-03-10 1958-09-18 Siemens Ag Elektrisches Halbleitergeraet
US2845515A (en) * 1953-03-12 1958-07-29 Raytheon Mfg Co Semimetallic resistive filaments
US2947617A (en) * 1958-01-06 1960-08-02 Gen Electric Abrasive material and preparation thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3241979A1 (de) * 1981-11-12 1983-06-01 Showa Denko K.K., Tokyo Verbindung vom bornitridtyp, verfahren zu deren herstellung und verfahren zur herstellung von kubischem bornitrid unter verwendung derselben

Also Published As

Publication number Publication date
NL260152A (enExample)
GB973822A (en) 1964-10-28
BE599144R (fr) 1961-05-16
NL131271C (enExample)
US3078232A (en) 1963-02-19

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