DE112019005410A5 - Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips - Google Patents

Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips Download PDF

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Publication number
DE112019005410A5
DE112019005410A5 DE112019005410.4T DE112019005410T DE112019005410A5 DE 112019005410 A5 DE112019005410 A5 DE 112019005410A5 DE 112019005410 T DE112019005410 T DE 112019005410T DE 112019005410 A5 DE112019005410 A5 DE 112019005410A5
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DE
Germany
Prior art keywords
semiconductor chip
optoelectronic semiconductor
manufacturing
optoelectronic
chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112019005410.4T
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English (en)
Inventor
Ivar Tångring
Korbinian Perzlmaier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112019005410A5 publication Critical patent/DE112019005410A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
DE112019005410.4T 2018-10-31 2019-10-02 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips Pending DE112019005410A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102018127201.4A DE102018127201A1 (de) 2018-10-31 2018-10-31 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE102018127201.4 2018-10-31
PCT/EP2019/076768 WO2020088877A1 (de) 2018-10-31 2019-10-02 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (1)

Publication Number Publication Date
DE112019005410A5 true DE112019005410A5 (de) 2021-08-05

Family

ID=68210765

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102018127201.4A Withdrawn DE102018127201A1 (de) 2018-10-31 2018-10-31 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips
DE112019005410.4T Pending DE112019005410A5 (de) 2018-10-31 2019-10-02 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102018127201.4A Withdrawn DE102018127201A1 (de) 2018-10-31 2018-10-31 Optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Country Status (5)

Country Link
US (1) US20210399169A1 (de)
JP (1) JP7277580B2 (de)
KR (1) KR102653810B1 (de)
DE (2) DE102018127201A1 (de)
WO (1) WO2020088877A1 (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020114772A1 (de) * 2020-06-03 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender halbleiterchip

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050205886A1 (en) * 2002-11-29 2005-09-22 Sanken Electric Co., Ltd. Gallium-containing light-emitting semiconductor device and method of fabrication
DE102004026231B4 (de) * 2004-05-28 2019-01-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Bereichs mit reduzierter elektrischer Leitfähigkeit innerhalb einer Halbleiterschicht und optoelektronisches Halbleiterbauelement
JP2006032665A (ja) 2004-07-16 2006-02-02 Hitachi Cable Ltd 発光ダイオード
KR100723150B1 (ko) 2005-12-26 2007-05-30 삼성전기주식회사 수직구조 질화물 반도체 발광소자 및 제조방법
JP2008227109A (ja) 2007-03-12 2008-09-25 Mitsubishi Chemicals Corp ＧａＮ系ＬＥＤ素子および発光装置
JP2011061036A (ja) 2009-09-10 2011-03-24 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物半導体発光素子
US20110198609A1 (en) * 2010-02-12 2011-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Light-Emitting Devices with Through-Substrate Via Connections
WO2011125311A1 (ja) 2010-04-01 2011-10-13 パナソニック株式会社 発光ダイオード素子および発光ダイオード装置
CN103201859B (zh) * 2010-08-10 2016-03-02 皇家飞利浦电子股份有限公司 用于led的分流层布置
US20120097918A1 (en) * 2010-10-20 2012-04-26 Varian Semiconductor Equipment Associates, Inc. Implanted current confinement structure to improve current spreading
TWI462334B (zh) * 2011-08-01 2014-11-21 Lextar Electronics Corp 發光二極體結構與其製造方法
JP2014096460A (ja) 2012-11-08 2014-05-22 Panasonic Corp 紫外半導体発光素子およびその製造方法
JP2015153827A (ja) 2014-02-12 2015-08-24 ウシオ電機株式会社 半導体発光素子及びその製造方法
GB201402508D0 (en) * 2014-02-13 2014-04-02 Mled Ltd Semiconductor modification process and structures
JP6595801B2 (ja) * 2014-05-30 2019-10-23 エルジー イノテック カンパニー リミテッド 発光素子
DE102015112538B4 (de) * 2015-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und ein Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102460072B1 (ko) * 2015-09-10 2022-10-31 삼성전자주식회사 반도체 발광 소자
JP6697275B2 (ja) 2016-01-22 2020-05-20 スタンレー電気株式会社 半導体発光装置、照明装置、および、車両用照明装置

Also Published As

Publication number Publication date
KR20210066003A (ko) 2021-06-04
JP7277580B2 (ja) 2023-05-19
KR102653810B1 (ko) 2024-04-01
JP2022506166A (ja) 2022-01-17
DE102018127201A1 (de) 2020-04-30
WO2020088877A1 (de) 2020-05-07
US20210399169A1 (en) 2021-12-23

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