DE112016002001A5 - Anordnung mit einem Substrat und einem Halbleiterlaser - Google Patents

Anordnung mit einem Substrat und einem Halbleiterlaser Download PDF

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Publication number
DE112016002001A5
DE112016002001A5 DE112016002001.5T DE112016002001T DE112016002001A5 DE 112016002001 A5 DE112016002001 A5 DE 112016002001A5 DE 112016002001 T DE112016002001 T DE 112016002001T DE 112016002001 A5 DE112016002001 A5 DE 112016002001A5
Authority
DE
Germany
Prior art keywords
substrate
arrangement
semiconductor laser
laser
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112016002001.5T
Other languages
English (en)
Inventor
Roland Enzmann
Markus Arzberger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112016002001A5 publication Critical patent/DE112016002001A5/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02375—Positioning of the laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02315—Support members, e.g. bases or carriers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06825—Protecting the laser, e.g. during switch-on/off, detection of malfunctioning or degradation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE112016002001.5T 2015-04-30 2016-04-29 Anordnung mit einem Substrat und einem Halbleiterlaser Withdrawn DE112016002001A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102015106712.9 2015-04-30
DE102015106712.9A DE102015106712A1 (de) 2015-04-30 2015-04-30 Anordnung mit einem Substrat und einem Halbleiterlaser
PCT/EP2016/059674 WO2016174238A1 (de) 2015-04-30 2016-04-29 Anordnung mit einem substrat und einem halbleiterlaser

Publications (1)

Publication Number Publication Date
DE112016002001A5 true DE112016002001A5 (de) 2018-01-11

Family

ID=55860870

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102015106712.9A Withdrawn DE102015106712A1 (de) 2015-04-30 2015-04-30 Anordnung mit einem Substrat und einem Halbleiterlaser
DE112016002001.5T Withdrawn DE112016002001A5 (de) 2015-04-30 2016-04-29 Anordnung mit einem Substrat und einem Halbleiterlaser

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102015106712.9A Withdrawn DE102015106712A1 (de) 2015-04-30 2015-04-30 Anordnung mit einem Substrat und einem Halbleiterlaser

Country Status (5)

Country Link
US (1) US20180090908A1 (de)
JP (1) JP6680800B2 (de)
CN (1) CN107534269B (de)
DE (2) DE102015106712A1 (de)
WO (1) WO2016174238A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6986453B2 (ja) 2018-01-12 2021-12-22 ローム株式会社 半導体レーザ装置
JP2022180123A (ja) * 2021-05-24 2022-12-06 日亜化学工業株式会社 発光装置および発光装置の製造方法

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EP0573724B1 (de) * 1992-06-09 1995-09-13 International Business Machines Corporation Herstellung von Laserdioden mit durch Spaltung erzeugten Stirnflächen auf einem vollständigen Wafer
JPH06350202A (ja) * 1993-06-10 1994-12-22 Toshiba Corp 半導体発光装置
US5627851A (en) * 1995-02-10 1997-05-06 Ricoh Company, Ltd. Semiconductor light emitting device
US5903584A (en) * 1998-01-05 1999-05-11 Youngtek Electronics Laser diode package
JP2001036178A (ja) * 1999-07-21 2001-02-09 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
JP2002344063A (ja) * 2001-05-17 2002-11-29 Ricoh Co Ltd 半導体レーザ装置、サブマウントの製造方法、及び半導体レーザチップのマウント方法
WO2003003420A1 (en) * 2001-06-29 2003-01-09 Xanoptix, Inc. Opto-electronic device integration
US6724794B2 (en) * 2001-06-29 2004-04-20 Xanoptix, Inc. Opto-electronic device integration
JP2003046181A (ja) * 2001-07-27 2003-02-14 Ricoh Co Ltd サブマウント、半導体装置およびサブマウントの製造方法
JP2003043181A (ja) * 2001-07-31 2003-02-13 Tokyo Electric Power Co Inc:The 原子炉建屋
US20030046181A1 (en) * 2001-09-04 2003-03-06 Komsource, L.L.C. Systems and methods for using a conversation control system in relation to a plurality of entities
JP2003282945A (ja) * 2002-03-26 2003-10-03 Sanyo Electric Co Ltd 半導体発光素子
JP2003304002A (ja) * 2002-04-08 2003-10-24 Sharp Corp 面実装型光半導体装置の製造方法
JP4088867B2 (ja) * 2002-05-01 2008-05-21 株式会社リコー 半導体発光素子の固着方法
US7264378B2 (en) * 2002-09-04 2007-09-04 Cree, Inc. Power surface mount light emitting die package
JP4536429B2 (ja) * 2004-06-04 2010-09-01 浜松ホトニクス株式会社 半導体レーザ装置及びその製造方法
CN101023568A (zh) 2004-09-22 2007-08-22 奥斯兰姆奥普托半导体有限责任公司 表面发射的半导体激光器装置以及用于制造表面发射的半导体激光器装置的方法
JP2006302926A (ja) * 2005-04-15 2006-11-02 Seiko Epson Corp レーザスクライブ用シリコン基板及びシリコン基板のダイシング方法
JP2007189030A (ja) * 2006-01-12 2007-07-26 Sumitomo Electric Ind Ltd 半導体レーザ装置
JP5273922B2 (ja) * 2006-12-28 2013-08-28 株式会社アライドマテリアル 放熱部材および半導体装置
WO2009036919A2 (de) * 2007-09-13 2009-03-26 Dirk Lorenzen Verfahren zur herstellung wenigstens einer strahlungsquelle
JP5003464B2 (ja) * 2007-12-21 2012-08-15 三菱電機株式会社 光伝送モジュール
US9018074B2 (en) * 2009-10-01 2015-04-28 Excelitas Canada, Inc. Photonic semiconductor devices in LLC assembly with controlled molding boundary and method for forming same
DE102010009455B4 (de) * 2010-02-26 2021-07-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung mit einem Halbleiterlaserchip und Verfahren zu dessen Herstellung
JPWO2013150715A1 (ja) * 2012-04-05 2015-12-17 パナソニックＩｐマネジメント株式会社 半導体レーザ装置およびその製造方法
JP2015019066A (ja) * 2013-07-10 2015-01-29 エクセリタス カナダ，インコーポレイテッド 成形境界を制御したｌｌｃ組立における光半導体デバイス及びこれを形成するための方法
DE102013223110A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung
DE102013223115A1 (de) * 2013-11-13 2015-05-28 Osram Opto Semiconductors Gmbh Laserbauelement und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
CN107534269B (zh) 2019-11-08
WO2016174238A1 (de) 2016-11-03
JP2018515916A (ja) 2018-06-14
DE102015106712A1 (de) 2016-11-03
US20180090908A1 (en) 2018-03-29
CN107534269A (zh) 2018-01-02
JP6680800B2 (ja) 2020-04-15

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Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee