DE112014004056T5 - Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer - Google Patents

Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer Download PDF

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Publication number
DE112014004056T5
DE112014004056T5 DE112014004056.8T DE112014004056T DE112014004056T5 DE 112014004056 T5 DE112014004056 T5 DE 112014004056T5 DE 112014004056 T DE112014004056 T DE 112014004056T DE 112014004056 T5 DE112014004056 T5 DE 112014004056T5
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DE
Germany
Prior art keywords
silicon carbide
crucible
seed crystal
substantially solid
precursor
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Pending
Application number
DE112014004056.8T
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German (de)
English (en)
Inventor
Roman V. Drachev
Parthasarathy Santhanaraghavan
Andriy M. Andrukhiv
David S. Lyttle
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GTAT Corp
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GTAT Corp
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Publication of DE112014004056T5 publication Critical patent/DE112014004056T5/de
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/002—Controlling or regulating
    • C30B23/005—Controlling or regulating flux or flow of depositing species or vapour
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
DE112014004056.8T 2013-09-06 2014-09-05 Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer Pending DE112014004056T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361874606P 2013-09-06 2013-09-06
US61/874,606 2013-09-06
PCT/US2014/054262 WO2015035145A1 (en) 2013-09-06 2014-09-05 Method and apparatus for producing bulk silicon carbide from a silicon carbide precursor

Publications (1)

Publication Number Publication Date
DE112014004056T5 true DE112014004056T5 (de) 2016-06-02

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Family Applications (1)

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DE112014004056.8T Pending DE112014004056T5 (de) 2013-09-06 2014-09-05 Verfahren und Apparatur zur Herstellung von Massen-Siliciumcarbid aus einem Siliciumcarbid-Vorläufer

Country Status (7)

Country Link
US (2) US10633762B2 (enExample)
JP (2) JP2016532629A (enExample)
KR (1) KR102245506B1 (enExample)
CN (1) CN105518190B (enExample)
DE (1) DE112014004056T5 (enExample)
TW (1) TWI647349B (enExample)
WO (1) WO2015035145A1 (enExample)

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AT524237B1 (de) 2020-09-28 2022-04-15 Ebner Ind Ofenbau Vorrichtung zur Siliziumcarbideinkristall-Herstellung
AT523729B1 (de) * 2020-09-28 2021-11-15 Ebner Ind Ofenbau Vorrichtung zum Züchten von Kristallen mit einer thermischen Umhüllungseinheit
AT524248B1 (de) 2020-09-28 2023-07-15 Ebner Ind Ofenbau Verfahren zur Züchtung von Kristallen
EP4001475A1 (en) 2020-11-19 2022-05-25 Zadient Technologies SAS Improved furnace apparatus for crystal production
EP4279641A1 (en) 2022-05-18 2023-11-22 Zadient Technologies SAS Improved furnace apparatus for crystal production with seed holder repositioning unit
CN116716655B (zh) * 2023-06-14 2024-04-02 通威微电子有限公司 生长高质量碳化硅晶体的装置、方法及碳化硅晶体
CN117923495A (zh) * 2023-12-22 2024-04-26 中山中晶半导体材料有限公司 一种高纯碳化硅原料的合成方法

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JP2016532629A (ja) * 2013-09-06 2016-10-20 ジーティーエイティー コーポレーションＧｔａｔ Ｃｏｒｐｏｒａｔｉｏｎ 炭化ケイ素前駆体からのバルクの炭化ケイ素の製造方法及び装置

Also Published As

Publication number Publication date
US20200199777A1 (en) 2020-06-25
WO2015035145A1 (en) 2015-03-12
US11434582B2 (en) 2022-09-06
TW201522727A (zh) 2015-06-16
KR20160054533A (ko) 2016-05-16
JP2019214511A (ja) 2019-12-19
US20150068447A1 (en) 2015-03-12
JP2016532629A (ja) 2016-10-20
CN105518190A (zh) 2016-04-20
KR102245506B1 (ko) 2021-04-28
JP6887174B2 (ja) 2021-06-16
TWI647349B (zh) 2019-01-11
CN105518190B (zh) 2021-08-27
US10633762B2 (en) 2020-04-28

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