DE112013006060A5 - Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip - Google Patents

Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Download PDF

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Publication number
DE112013006060A5
DE112013006060A5 DE112013006060.4T DE112013006060T DE112013006060A5 DE 112013006060 A5 DE112013006060 A5 DE 112013006060A5 DE 112013006060 T DE112013006060 T DE 112013006060T DE 112013006060 A5 DE112013006060 A5 DE 112013006060A5
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Germany
Prior art keywords
optoelectronic semiconductor
producing
semiconductor chip
semiconductor chips
chips
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Pending
Application number
DE112013006060.4T
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English (en)
Inventor
Alexander F. Pfeuffer
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Filing date
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Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of DE112013006060A5 publication Critical patent/DE112013006060A5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Led Device Packages (AREA)
DE112013006060.4T 2012-12-18 2013-12-12 Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Pending DE112013006060A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102012112530.9 2012-12-18
DE102012112530.9A DE102012112530A1 (de) 2012-12-18 2012-12-18 Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
PCT/EP2013/076355 WO2014095556A1 (de) 2012-12-18 2013-12-12 Verfahren zum herstellen von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Publications (1)

Publication Number Publication Date
DE112013006060A5 true DE112013006060A5 (de) 2015-08-27

Family

ID=49880710

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102012112530.9A Withdrawn DE102012112530A1 (de) 2012-12-18 2012-12-18 Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112013006060.4T Pending DE112013006060A5 (de) 2012-12-18 2013-12-12 Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102012112530.9A Withdrawn DE102012112530A1 (de) 2012-12-18 2012-12-18 Verfahren zum Herstellen von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Country Status (4)

Country Link
US (1) US20150333047A1 (de)
KR (1) KR20150097556A (de)
DE (2) DE102012112530A1 (de)
WO (1) WO2014095556A1 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102014102029A1 (de) * 2014-02-18 2015-08-20 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterbauelementen und Halbleiterbauelement
DE102014112750A1 (de) * 2014-09-04 2016-03-10 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102014116141B4 (de) * 2014-11-05 2022-07-28 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips, optoelektronischer Halbleiterchip sowie optoelektronisches Halbleiterbauelement
DE102015100686A1 (de) * 2015-01-19 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Halbleiterchips und Halbleiterchip
DE102016105056A1 (de) * 2016-03-18 2017-09-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN109564930B (zh) * 2016-05-13 2023-08-15 原子能与替代能源委员会 用于生产包括多个氮化镓二极管的光电设备的方法
DE102017121346A1 (de) 2016-09-15 2018-03-15 Osram Opto Semiconductors Gmbh Messsystem, Verwendung zumindest einer individuell betreibbaren Leuchtdioden-Leuchteinheit als Sendereinheit in einem Messsystem, Verfahren zum Betrieb eines Messsystems und Beleuchtungsquelle mit einem Messsystem
KR102209661B1 (ko) * 2016-09-19 2021-01-28 애플 인크. 실리콘 제어 백플레인 상에 통합된 수직 이미터
CN110178276B (zh) 2017-01-16 2020-12-29 苹果公司 在同一基板上组合不同散度的发光元件
US11381060B2 (en) 2017-04-04 2022-07-05 Apple Inc. VCSELs with improved optical and electrical confinement
FR3073669B1 (fr) * 2017-11-10 2021-11-05 Commissariat Energie Atomique Procede de fabrication d'un dispositif optoelectronique comprenant une pluralite de diodes
DE102017130578A1 (de) 2017-12-19 2019-06-19 Osram Opto Semiconductors Gmbh Lichtquelle
US11018089B2 (en) * 2019-01-08 2021-05-25 Innolux Corporation Display devices and methods for manufacturing the same
EP3888138A1 (de) 2019-02-21 2021-10-06 Apple Inc. Indiumphosphid-vcsel mit dielektrischem bragg-spiegel
DE102019107030A1 (de) * 2019-03-19 2020-09-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronische halbleitervorrichtung mit einer vielzahl von bildelementen und trennelementen und verfahren zur herstellung der optoelektronischen halbleitervorrichtung
CN113711450A (zh) 2019-04-01 2021-11-26 苹果公司 具有紧密节距和高效率的vcsel阵列
US11374381B1 (en) 2019-06-10 2022-06-28 Apple Inc. Integrated laser module
FR3099966B1 (fr) * 2019-08-16 2021-09-24 Commissariat Energie Atomique Procédé de fabrication de dispositifs optoélectroniques
CN112864290B (zh) * 2020-04-09 2022-04-22 镭昱光电科技(苏州)有限公司 微型led显示器及其制造方法
US20210351226A1 (en) * 2020-05-05 2021-11-11 Raysolve Optoelectronics (Suzhou) Company Limited Full color light emitting diode structure and method for manufacturing the same

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US7323723B2 (en) * 2001-12-28 2008-01-29 Sanken Electric Co., Ltd. Semiconductor light-emitting device using phosphors for performing wavelength conversion
CA2466141C (en) * 2002-01-28 2012-12-04 Nichia Corporation Nitride semiconductor device having support substrate and its manufacturing method
AU2003252359A1 (en) * 2002-08-01 2004-02-23 Nichia Corporation Semiconductor light-emitting device, method for manufacturing same and light-emitting apparatus using same
CN100446288C (zh) * 2006-08-01 2008-12-24 金芃 通孔垂直结构的半导体芯片及其制造方法
DE102008011848A1 (de) * 2008-02-29 2009-09-03 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines solchen
WO2010020068A1 (en) * 2008-08-19 2010-02-25 Lattice Power (Jiangxi) Corporation Semiconductor light-emitting devices for generating arbitrary color
DE102008051050A1 (de) * 2008-10-09 2010-04-15 Osram Opto Semiconductors Gmbh Modul mit optoelektronischen Halbleiterelementen
JP5276412B2 (ja) * 2008-11-04 2013-08-28 キヤノン株式会社 機能性領域の移設方法、ｌｅｄアレイ、ｌｅｄプリンタヘッド、及びｌｅｄプリンタ
US8188496B2 (en) * 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
TWI480962B (zh) * 2009-04-09 2015-04-11 Lextar Electronics Corp 發光二極體封裝以及發光二極體晶圓級封裝製程
DE102009037186A1 (de) * 2009-08-12 2011-02-17 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauteil
DE102010048159B4 (de) * 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
KR101920374B1 (ko) * 2011-04-27 2018-11-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 그 제작 방법
KR101952570B1 (ko) * 2011-05-13 2019-02-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
DE102011102032A1 (de) * 2011-05-19 2012-11-22 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleitermodul und Display mit einer Mehrzahl derartiger Module

Also Published As

Publication number Publication date
DE102012112530A1 (de) 2014-06-18
KR20150097556A (ko) 2015-08-26
US20150333047A1 (en) 2015-11-19
WO2014095556A1 (de) 2014-06-26

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