DE112014002611A5 - Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip - Google Patents
Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Download PDFInfo
- Publication number
- DE112014002611A5 DE112014002611A5 DE112014002611.5T DE112014002611T DE112014002611A5 DE 112014002611 A5 DE112014002611 A5 DE 112014002611A5 DE 112014002611 T DE112014002611 T DE 112014002611T DE 112014002611 A5 DE112014002611 A5 DE 112014002611A5
- Authority
- DE
- Germany
- Prior art keywords
- optoelectronic semiconductor
- producing
- semiconductor chip
- semiconductor chips
- chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005693 optoelectronics Effects 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14629—Reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
- H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102013105550.8 | 2013-05-29 | ||
DE102013105550 | 2013-05-29 | ||
DE102013109316.7 | 2013-08-28 | ||
DE102013109316.7A DE102013109316A1 (de) | 2013-05-29 | 2013-08-28 | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
PCT/EP2014/061136 WO2014191497A1 (de) | 2013-05-29 | 2014-05-28 | Verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip |
Publications (2)
Publication Number | Publication Date |
---|---|
DE112014002611A5 true DE112014002611A5 (de) | 2016-03-10 |
DE112014002611B4 DE112014002611B4 (de) | 2024-09-26 |
Family
ID=51899271
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102013109316.7A Withdrawn DE102013109316A1 (de) | 2013-05-29 | 2013-08-28 | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
DE112014002611.5T Active DE112014002611B4 (de) | 2013-05-29 | 2014-05-28 | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE102013109316.7A Withdrawn DE102013109316A1 (de) | 2013-05-29 | 2013-08-28 | Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
Country Status (5)
Country | Link |
---|---|
US (1) | US9705058B2 (de) |
JP (1) | JP6211176B2 (de) |
KR (1) | KR102234785B1 (de) |
DE (2) | DE102013109316A1 (de) |
WO (1) | WO2014191497A1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102013110853B4 (de) | 2013-10-01 | 2020-12-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips |
KR102255305B1 (ko) * | 2014-10-14 | 2021-05-24 | 삼성전자주식회사 | 수직형 반도체 발광소자 및 그 제조 방법 |
DE102014116935A1 (de) * | 2014-11-19 | 2016-05-19 | Osram Opto Semiconductors Gmbh | Bauelement und Verfahren zur Herstellung eines Bauelements |
CN104681684A (zh) * | 2014-12-30 | 2015-06-03 | 深圳市华星光电技术有限公司 | 一种发光器件及发光器件封装 |
DE102016101347A1 (de) * | 2016-01-26 | 2017-07-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Mehrzahl von Bauelementen |
DE102017104742A1 (de) | 2017-03-07 | 2018-09-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements |
DE102017106410A1 (de) * | 2017-03-24 | 2018-09-27 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement |
DE102018111324A1 (de) * | 2018-05-11 | 2019-11-14 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip |
KR102673060B1 (ko) * | 2018-12-24 | 2024-06-10 | 삼성전자주식회사 | 마이크로 led 소자 및 마이크로 led 제조 방법 |
DE102021123996A1 (de) | 2021-09-16 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektornisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005029246B4 (de) | 2005-03-31 | 2023-06-22 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip mit einer Lötschichtenfolge und Verfahren zum Löten eines Halbleiterchips |
DE102007019776A1 (de) | 2007-04-26 | 2008-10-30 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente |
DE102007062046B4 (de) | 2007-12-21 | 2023-09-07 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelement sowie Verfahren zum Herstellen einer Mehrzahl von lichtemittierenden Bauelementen |
DE102008050573A1 (de) | 2008-10-06 | 2010-04-08 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement |
DE102009032486A1 (de) * | 2009-07-09 | 2011-01-13 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
JP5423390B2 (ja) * | 2009-12-26 | 2014-02-19 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
JP2011142231A (ja) | 2010-01-07 | 2011-07-21 | Hitachi Cable Ltd | 半導体発光素子及びledランプ、並びに半導体発光素子の製造方法 |
KR100986560B1 (ko) | 2010-02-11 | 2010-10-07 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
TWI517445B (zh) * | 2010-02-12 | 2016-01-11 | 精材科技股份有限公司 | 發光二極體封裝、用於發光二極體封裝之高反射型次基板及其製造方法 |
DE102010025320B4 (de) | 2010-06-28 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement und Verfahren zu dessen Herstellung |
KR101252032B1 (ko) * | 2010-07-08 | 2013-04-10 | 삼성전자주식회사 | 반도체 발광소자 및 이의 제조방법 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
DE102010048159B4 (de) | 2010-10-11 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Leuchtdiodenchip |
DE102011013821B4 (de) | 2011-03-14 | 2024-05-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips |
JP5887638B2 (ja) | 2011-05-30 | 2016-03-16 | 億光電子工業股▲ふん▼有限公司Everlight Electronics Co.,Ltd. | 発光ダイオード |
JP5992702B2 (ja) * | 2012-03-21 | 2016-09-14 | スタンレー電気株式会社 | 半導体発光素子、および、車両用灯具、ならびに、半導体発光素子の製造方法 |
-
2013
- 2013-08-28 DE DE102013109316.7A patent/DE102013109316A1/de not_active Withdrawn
-
2014
- 2014-05-28 WO PCT/EP2014/061136 patent/WO2014191497A1/de active Application Filing
- 2014-05-28 KR KR1020157033610A patent/KR102234785B1/ko active IP Right Grant
- 2014-05-28 US US14/893,922 patent/US9705058B2/en active Active
- 2014-05-28 DE DE112014002611.5T patent/DE112014002611B4/de active Active
- 2014-05-28 JP JP2016516160A patent/JP6211176B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
US20160111615A1 (en) | 2016-04-21 |
KR20160013875A (ko) | 2016-02-05 |
JP6211176B2 (ja) | 2017-10-11 |
DE102013109316A1 (de) | 2014-12-04 |
WO2014191497A1 (de) | 2014-12-04 |
DE112014002611B4 (de) | 2024-09-26 |
JP2016520261A (ja) | 2016-07-11 |
KR102234785B1 (ko) | 2021-04-01 |
US9705058B2 (en) | 2017-07-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
R012 | Request for examination validly filed | ||
R016 | Response to examination communication | ||
R016 | Response to examination communication | ||
R018 | Grant decision by examination section/examining division |