DE112014002611A5 - Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip - Google Patents

Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Download PDF

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Publication number
DE112014002611A5
DE112014002611A5 DE112014002611.5T DE112014002611T DE112014002611A5 DE 112014002611 A5 DE112014002611 A5 DE 112014002611A5 DE 112014002611 T DE112014002611 T DE 112014002611T DE 112014002611 A5 DE112014002611 A5 DE 112014002611A5
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Prior art keywords
optoelectronic semiconductor
producing
semiconductor chip
semiconductor chips
chips
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DE112014002611.5T
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DE112014002611B4 (de
Inventor
Norwin Von Malm
Andreas Plössl
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/382—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending partially in or entirely through the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE112014002611.5T 2013-05-29 2014-05-28 Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip Active DE112014002611B4 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102013105550.8 2013-05-29
DE102013105550 2013-05-29
DE102013109316.7 2013-08-28
DE102013109316.7A DE102013109316A1 (de) 2013-05-29 2013-08-28 Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
PCT/EP2014/061136 WO2014191497A1 (de) 2013-05-29 2014-05-28 Verfahren zur herstellung einer mehrzahl von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip

Publications (2)

Publication Number Publication Date
DE112014002611A5 true DE112014002611A5 (de) 2016-03-10
DE112014002611B4 DE112014002611B4 (de) 2024-09-26

Family

ID=51899271

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102013109316.7A Withdrawn DE102013109316A1 (de) 2013-05-29 2013-08-28 Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE112014002611.5T Active DE112014002611B4 (de) 2013-05-29 2014-05-28 Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102013109316.7A Withdrawn DE102013109316A1 (de) 2013-05-29 2013-08-28 Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip

Country Status (5)

Country Link
US (1) US9705058B2 (de)
JP (1) JP6211176B2 (de)
KR (1) KR102234785B1 (de)
DE (2) DE102013109316A1 (de)
WO (1) WO2014191497A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013110853B4 (de) 2013-10-01 2020-12-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterchip und Verfahren zur Herstellung von strahlungsemittierenden Halbleiterchips
KR102255305B1 (ko) * 2014-10-14 2021-05-24 삼성전자주식회사 수직형 반도체 발광소자 및 그 제조 방법
DE102014116935A1 (de) * 2014-11-19 2016-05-19 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN104681684A (zh) * 2014-12-30 2015-06-03 深圳市华星光电技术有限公司 一种发光器件及发光器件封装
DE102016101347A1 (de) * 2016-01-26 2017-07-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von Bauelementen
DE102017104742A1 (de) 2017-03-07 2018-09-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102017106410A1 (de) * 2017-03-24 2018-09-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102018111324A1 (de) * 2018-05-11 2019-11-14 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
KR102673060B1 (ko) * 2018-12-24 2024-06-10 삼성전자주식회사 마이크로 led 소자 및 마이크로 led 제조 방법
DE102021123996A1 (de) 2021-09-16 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektornisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005029246B4 (de) 2005-03-31 2023-06-22 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip mit einer Lötschichtenfolge und Verfahren zum Löten eines Halbleiterchips
DE102007019776A1 (de) 2007-04-26 2008-10-30 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung einer Mehrzahl optoelektronischer Bauelemente
DE102007062046B4 (de) 2007-12-21 2023-09-07 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lichtemittierende Bauelementeanordnung, lichtemittierendes Bauelement sowie Verfahren zum Herstellen einer Mehrzahl von lichtemittierenden Bauelementen
DE102008050573A1 (de) 2008-10-06 2010-04-08 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements und optoelektronisches Halbleiterbauelement
DE102009032486A1 (de) * 2009-07-09 2011-01-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP5423390B2 (ja) * 2009-12-26 2014-02-19 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
JP2011142231A (ja) 2010-01-07 2011-07-21 Hitachi Cable Ltd 半導体発光素子及びｌｅｄランプ、並びに半導体発光素子の製造方法
KR100986560B1 (ko) 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
TWI517445B (zh) * 2010-02-12 2016-01-11 精材科技股份有限公司 發光二極體封裝、用於發光二極體封裝之高反射型次基板及其製造方法
DE102010025320B4 (de) 2010-06-28 2021-11-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Bauelement und Verfahren zu dessen Herstellung
KR101252032B1 (ko) * 2010-07-08 2013-04-10 삼성전자주식회사 반도체 발광소자 및 이의 제조방법
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
DE102010048159B4 (de) 2010-10-11 2023-10-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiodenchip
DE102011013821B4 (de) 2011-03-14 2024-05-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung zumindest eines optoelektronischen Halbleiterchips
JP5887638B2 (ja) 2011-05-30 2016-03-16 億光電子工業股▲ふん▼有限公司Ｅｖｅｒｌｉｇｈｔ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． 発光ダイオード
JP5992702B2 (ja) * 2012-03-21 2016-09-14 スタンレー電気株式会社 半導体発光素子、および、車両用灯具、ならびに、半導体発光素子の製造方法

Also Published As

Publication number Publication date
US20160111615A1 (en) 2016-04-21
KR20160013875A (ko) 2016-02-05
JP6211176B2 (ja) 2017-10-11
DE102013109316A1 (de) 2014-12-04
WO2014191497A1 (de) 2014-12-04
DE112014002611B4 (de) 2024-09-26
JP2016520261A (ja) 2016-07-11
KR102234785B1 (ko) 2021-04-01
US9705058B2 (en) 2017-07-11

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