DE112006001280B4 - Halbleitervorrichtung und Verfahren zu deren Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu deren Herstellung Download PDF

Info

Publication number
DE112006001280B4
DE112006001280B4 DE112006001280.0T DE112006001280T DE112006001280B4 DE 112006001280 B4 DE112006001280 B4 DE 112006001280B4 DE 112006001280 T DE112006001280 T DE 112006001280T DE 112006001280 B4 DE112006001280 B4 DE 112006001280B4
Authority
DE
Germany
Prior art keywords
conductivity type
region
area
source
drift layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE112006001280.0T
Other languages
German (de)
English (en)
Other versions
DE112006001280T5 (de
Inventor
Kenichi Ootsuka
Tetsuya Takami
Tadaharu Minato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE112006001280T5 publication Critical patent/DE112006001280T5/de
Application granted granted Critical
Publication of DE112006001280B4 publication Critical patent/DE112006001280B4/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 
    • H10D62/156—Drain regions of DMOS transistors
    • H10D62/157—Impurity concentrations or distributions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
    • H10D62/8325—Silicon carbide

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Recrystallisation Techniques (AREA)
DE112006001280.0T 2005-05-19 2006-02-14 Halbleitervorrichtung und Verfahren zu deren Herstellung Expired - Lifetime DE112006001280B4 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005-147088 2005-05-19
JP2005147088A JP4948784B2 (ja) 2005-05-19 2005-05-19 半導体装置及びその製造方法
PCT/JP2006/302516 WO2006123458A1 (ja) 2005-05-19 2006-02-14 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE112006001280T5 DE112006001280T5 (de) 2008-03-13
DE112006001280B4 true DE112006001280B4 (de) 2016-08-18

Family

ID=37431041

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112006001280.0T Expired - Lifetime DE112006001280B4 (de) 2005-05-19 2006-02-14 Halbleitervorrichtung und Verfahren zu deren Herstellung

Country Status (4)

Country Link
US (1) US7829898B2 (https=)
JP (1) JP4948784B2 (https=)
DE (1) DE112006001280B4 (https=)
WO (1) WO2006123458A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5560519B2 (ja) * 2006-04-11 2014-07-30 日産自動車株式会社 半導体装置及びその製造方法
JP5528424B2 (ja) 2009-02-24 2014-06-25 三菱電機株式会社 炭化珪素半導体装置
WO2012056642A1 (ja) * 2010-10-29 2012-05-03 パナソニック株式会社 半導体素子
JP2012253108A (ja) * 2011-06-01 2012-12-20 Sumitomo Electric Ind Ltd 炭化珪素半導体装置およびその製造方法
CN109585541B (zh) * 2018-12-27 2024-03-26 西安中车永电电气有限公司 一种埋沟式SiC IGBT常关器件及其制备方法
JP7486729B2 (ja) * 2020-04-14 2024-05-20 国立研究開発法人産業技術総合研究所 半導体装置
EP4310919A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having a lateral doping gradient and corresponding manufacturing method
EP4310920A1 (en) * 2022-07-22 2024-01-24 Nexperia B.V. A vertical oriented semiconductor device comprising well regions having two lateral doping gradients at different depths and a corresponding manufacturing method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246077B1 (en) * 1996-10-16 2001-06-12 Kabushiki Kaisha Toshiba Semiconductor device
US20040079989A1 (en) * 2002-10-11 2004-04-29 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5561302A (en) * 1994-09-26 1996-10-01 Motorola, Inc. Enhanced mobility MOSFET device and method
US6573534B1 (en) 1995-09-06 2003-06-03 Denso Corporation Silicon carbide semiconductor device
JP3385938B2 (ja) 1997-03-05 2003-03-10 株式会社デンソー 炭化珪素半導体装置及びその製造方法
US6281521B1 (en) * 1998-07-09 2001-08-28 Cree Research Inc. Silicon carbide horizontal channel buffered gate semiconductor devices
JP3428459B2 (ja) 1998-09-01 2003-07-22 富士電機株式会社 炭化けい素ｎチャネルＭＯＳ半導体素子およびその製造方法
JP2000323583A (ja) * 1999-05-13 2000-11-24 Miyazaki Oki Electric Co Ltd 半導体装置
JP2001257347A (ja) * 2000-03-10 2001-09-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP4802378B2 (ja) 2001-03-12 2011-10-26 株式会社デンソー 炭化珪素半導体装置の製造方法
JP4876321B2 (ja) * 2001-03-30 2012-02-15 株式会社デンソー 炭化珪素半導体装置の製造方法
JP3580304B2 (ja) * 2002-10-11 2004-10-20 日産自動車株式会社 炭化珪素半導体装置及びその製造方法
AU2003275541A1 (en) * 2002-10-18 2004-05-04 National Institute Of Advanced Industrial Science And Technology Silicon carbide semiconductor device and its manufacturing method
JP2004146626A (ja) * 2002-10-25 2004-05-20 Toshiba Corp 半導体装置
US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
JP4020196B2 (ja) * 2002-12-25 2007-12-12 三菱電機株式会社 半導体素子の製造方法
JP2004247545A (ja) * 2003-02-14 2004-09-02 Nissan Motor Co Ltd 半導体装置及びその製造方法
JP4193596B2 (ja) 2003-06-09 2008-12-10 三菱電機株式会社 炭化珪素半導体装置の製造方法
JP2005033030A (ja) 2003-07-07 2005-02-03 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2005116896A (ja) * 2003-10-09 2005-04-28 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6246077B1 (en) * 1996-10-16 2001-06-12 Kabushiki Kaisha Toshiba Semiconductor device
US20040079989A1 (en) * 2002-10-11 2004-04-29 Nissan Motor Co., Ltd. Insulated gate tunnel-injection device having heterojunction and method for manufacturing the same

Also Published As

Publication number Publication date
WO2006123458A1 (ja) 2006-11-23
US7829898B2 (en) 2010-11-09
JP2006324517A (ja) 2006-11-30
DE112006001280T5 (de) 2008-03-13
JP4948784B2 (ja) 2012-06-06
US20090020834A1 (en) 2009-01-22

Similar Documents

Publication Publication Date Title
DE112016003510B4 (de) HALBLEITERVORRlCHTUNG UND VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG
DE112015004093B4 (de) Siliciumcarbid-halbleitervorrichtung und verfahren zum herstellen einer siliciumcarbid-halbleitervorrichtung
DE102011086500B4 (de) Siliziumcarbid-Halbleitervorrichtung und deren Herstellungsverfahren
DE102009056453B4 (de) Siliciumcarbidhalbleitervorrichtung und Herstellungsverfahren dafür
EP1408554B1 (de) Durch Feldeffekt steuerbares Halbleiterbauelement
DE102017210665B4 (de) Siliziumkarbid-halbleiterbauelement und verfahren zur herstellung des siliziumkarbid-halbleiterbauelements
DE69535441T2 (de) Verfahren zur herstellung eines mos gesteuerten bauelements mit reduzierter maskenzahl
DE3853778T2 (de) Verfahren zur Herstellung eines Halbleiterbauelements.
DE102013022720B4 (de) Halbleiterbauelement
DE69209678T2 (de) Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung
DE19848828C2 (de) Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
DE69015666T2 (de) MOSFET-Transistor mit nicht-gleichmässiger Schwellspannung im Kanalbereich.
DE112016007257B4 (de) Siliziumcarbid-Halbleitervorrichtung
DE102013010245A1 (de) Halbleitervorrichtung
DE112013006308T5 (de) Siliziumcarbid-Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE19638438A1 (de) Durch Feldeffekt steuerbares, vertikales Halbleiterbauelement
EP1151478A1 (de) Mos-leistungsbauelement und verfahren zum herstellen desselben
DE112011104322T5 (de) Halbleitervorrichtung und Verfahren zur Herstellung einer Halbleitervorrichtung
DE2940699A1 (de) Mosfet-anordnung, insbesondere leistungs-mosfet-anordnung
DE102012220166B4 (de) Verfahren zur Herstellung eines IGBT mit vertikalen Gräben
DE102018118875B4 (de) Halbleitervorrichtung und Verfahren zu ihrer Herstellung
DE112016006723T5 (de) Halbleitereinrichtung
DE112013002178T5 (de) Vertikale Hochspannungshalbleitervorrichtung und Herstellungsverfahren davon
DE112022006775T5 (de) Halbleitereinrichtung und Herstellungsverfahren für eine Halbleitereinrichtung
DE112006001280B4 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
R016 Response to examination communication
R084 Declaration of willingness to licence
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0029780000

Ipc: H10D0030600000

R071 Expiry of right