DE112005003497T5 - Verfahren zur Herstellung von Hydrochlorsilanen - Google Patents
Verfahren zur Herstellung von Hydrochlorsilanen Download PDFInfo
- Publication number
- DE112005003497T5 DE112005003497T5 DE112005003497T DE112005003497T DE112005003497T5 DE 112005003497 T5 DE112005003497 T5 DE 112005003497T5 DE 112005003497 T DE112005003497 T DE 112005003497T DE 112005003497 T DE112005003497 T DE 112005003497T DE 112005003497 T5 DE112005003497 T5 DE 112005003497T5
- Authority
- DE
- Germany
- Prior art keywords
- silicon
- metal
- hydrogen
- accelerator
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000034 method Methods 0.000 title claims description 48
- 238000002360 preparation method Methods 0.000 title claims description 13
- 229910052751 metal Inorganic materials 0.000 claims abstract description 52
- 239000002184 metal Substances 0.000 claims abstract description 52
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 48
- 238000006243 chemical reaction Methods 0.000 claims abstract description 47
- 239000001257 hydrogen Substances 0.000 claims abstract description 47
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 23
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims abstract description 21
- 239000000460 chlorine Substances 0.000 claims abstract description 21
- 229910052801 chlorine Inorganic materials 0.000 claims abstract description 21
- 239000000126 substance Substances 0.000 claims abstract description 21
- 238000007038 hydrochlorination reaction Methods 0.000 claims abstract description 17
- 239000011856 silicon-based particle Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract 6
- 238000000151 deposition Methods 0.000 claims abstract 6
- 239000001301 oxygen Substances 0.000 claims abstract 6
- 229910052760 oxygen Inorganic materials 0.000 claims abstract 6
- 230000008021 deposition Effects 0.000 claims abstract 3
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 claims abstract 2
- 229910052710 silicon Inorganic materials 0.000 claims description 110
- 239000010703 silicon Substances 0.000 claims description 110
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 109
- 239000010949 copper Substances 0.000 claims description 43
- 229910052802 copper Inorganic materials 0.000 claims description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 41
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 37
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 28
- 239000005052 trichlorosilane Substances 0.000 claims description 28
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 claims description 20
- 229910021591 Copper(I) chloride Inorganic materials 0.000 claims description 19
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical group [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 claims description 19
- 229910000041 hydrogen chloride Inorganic materials 0.000 claims description 19
- 239000005049 silicon tetrachloride Substances 0.000 claims description 18
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 claims description 17
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 13
- 150000002431 hydrogen Chemical class 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 239000002245 particle Substances 0.000 claims description 9
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 239000000956 alloy Substances 0.000 claims description 7
- WCCJDBZJUYKDBF-UHFFFAOYSA-N copper silicon Chemical compound [Si].[Cu] WCCJDBZJUYKDBF-UHFFFAOYSA-N 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical group [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 5
- 239000005751 Copper oxide Substances 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 229910000431 copper oxide Inorganic materials 0.000 claims description 5
- 230000001737 promoting effect Effects 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 3
- 230000008016 vaporization Effects 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000003054 catalyst Substances 0.000 description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 8
- 239000005046 Chlorosilane Substances 0.000 description 5
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 5
- 239000012458 free base Substances 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 238000005984 hydrogenation reaction Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- -1 copper Chemical class 0.000 description 4
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 229940045803 cuprous chloride Drugs 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- 239000005749 Copper compound Substances 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910003902 SiCl 4 Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- SLLGVCUQYRMELA-UHFFFAOYSA-N chlorosilicon Chemical compound Cl[Si] SLLGVCUQYRMELA-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 150000001880 copper compounds Chemical class 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- JUZTWRXHHZRLED-UHFFFAOYSA-N [Si].[Cu].[Cu].[Cu].[Cu].[Cu] Chemical compound [Si].[Cu].[Cu].[Cu].[Cu].[Cu] JUZTWRXHHZRLED-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000001174 ascending effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 229910021360 copper silicide Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000004817 gas chromatography Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910021471 metal-silicon alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000006454 non catalyzed reaction Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000012041 precatalyst Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/08—Compounds containing halogen
- C01B33/107—Halogenated silanes
- C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
- C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/38—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals
- B01J23/40—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of noble metals of the platinum group metals
- B01J23/42—Platinum
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/70—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of the iron group metals or copper
- B01J23/72—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/06—Halogens; Compounds thereof
- B01J27/08—Halides
- B01J27/122—Halides of copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J37/00—Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
- B01J37/16—Reducing
- B01J37/18—Reducing with gases containing free hydrogen
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/12—Organo silicon halides
- C07F7/16—Preparation thereof from silicon and halogenated hydrocarbons direct synthesis
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Catalysts (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/US2005/008204 WO2006098722A1 (en) | 2005-03-09 | 2005-03-09 | Process for the production of hydrochlorosilanes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112005003497T5 true DE112005003497T5 (de) | 2008-01-24 |
Family
ID=36991997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112005003497T Withdrawn DE112005003497T5 (de) | 2005-03-09 | 2005-03-09 | Verfahren zur Herstellung von Hydrochlorsilanen |
Country Status (8)
| Country | Link |
|---|---|
| EP (1) | EP1861408A4 (zh) |
| JP (1) | JP4813545B2 (zh) |
| KR (1) | KR101176088B1 (zh) |
| CN (1) | CN101189245B (zh) |
| DE (1) | DE112005003497T5 (zh) |
| NO (1) | NO20076030L (zh) |
| TW (1) | TWI454424B (zh) |
| WO (1) | WO2006098722A1 (zh) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101279734B (zh) * | 2008-05-30 | 2010-06-02 | 广州吉必盛科技实业有限公司 | 合成多晶硅原料三氯氢硅的方法 |
| DE102008002537A1 (de) * | 2008-06-19 | 2009-12-24 | Evonik Degussa Gmbh | Verfahren zur Entfernung von Bor enthaltenden Verunreinigungen aus Halogensilanen sowie Anlage zur Durchführung des Verfahrens |
| US8178051B2 (en) * | 2008-11-05 | 2012-05-15 | Stephen Michael Lord | Apparatus and process for hydrogenation of a silicon tetrahalide and silicon to the trihalosilane |
| US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
| CN102574091B (zh) * | 2009-05-12 | 2016-03-16 | 普罗斯迪尼公司 | 用于合成三氯硅烷的流化床方法和三氯硅烷合成器 |
| KR101672796B1 (ko) * | 2009-11-10 | 2016-11-07 | 주식회사 케이씨씨 | 염소가스 혹은 염화수소를 이용하여 다결정실리콘 제조원료인 고순도의 삼염화실란을 제조하는 방법 |
| JP5542026B2 (ja) | 2010-10-27 | 2014-07-09 | 信越化学工業株式会社 | クロロシラン類の精製方法 |
| WO2013059686A1 (en) * | 2011-10-20 | 2013-04-25 | Rec Silicon Inc | Fouling reduction in hydrochlorosilane production |
| US20150030520A1 (en) * | 2012-03-14 | 2015-01-29 | Centrotherm Photovoltaics Usa, Inc. | Trichlorosilane production |
| KR101462634B1 (ko) * | 2013-03-07 | 2014-11-17 | 한화케미칼 주식회사 | 트리클로로실란의 제조방법 |
| WO2014172102A1 (en) * | 2013-04-19 | 2014-10-23 | Rec Silicon Inc | Corrosion and fouling reduction in hydrochlorosilane production |
| KR101519498B1 (ko) * | 2013-06-19 | 2015-05-12 | 한화케미칼 주식회사 | 트리클로로실란의 제조방법 |
| CN105080434B (zh) * | 2014-04-18 | 2018-02-27 | 新特能源股份有限公司 | 一种催化反应器、系统、四氯化硅催化氢化反应的方法 |
| KR101616043B1 (ko) * | 2014-07-22 | 2016-04-27 | 한화케미칼 주식회사 | 삼염화실란의 제조방법 |
| CN107108236A (zh) * | 2014-12-18 | 2017-08-29 | 赫姆洛克半导体运营有限责任公司 | 氢化卤代硅烷的方法 |
| EP3606874B1 (de) * | 2017-10-05 | 2021-03-24 | Wacker Chemie AG | Verfahren zur herstellung von chlorsilanen |
| CN113651844B (zh) * | 2021-08-20 | 2023-09-12 | 唐山偶联硅业有限公司 | 连续法制备二甲基氢氯硅烷的工艺 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2499009A (en) * | 1947-02-15 | 1950-02-28 | Linde Air Prod Co | Chlorosilanes |
| US4676967A (en) * | 1978-08-23 | 1987-06-30 | Union Carbide Corporation | High purity silane and silicon production |
| US4314908A (en) * | 1979-10-24 | 1982-02-09 | Union Carbide Corporation | Preparation of reaction mass for the production of methylchlorosilane |
| JPS58161915A (ja) * | 1982-03-17 | 1983-09-26 | Shin Etsu Chem Co Ltd | トリクロロシランの製造方法 |
| US4526769A (en) * | 1983-07-18 | 1985-07-02 | Motorola, Inc. | Trichlorosilane production process |
| JPS62288109A (ja) * | 1986-06-05 | 1987-12-15 | Mitsubishi Metal Corp | トリクロルシランの製造方法 |
| JPH0788214B2 (ja) * | 1986-10-15 | 1995-09-27 | 三井東圧化学株式会社 | トリクロロシランの製造方法 |
| JP2613260B2 (ja) * | 1988-06-09 | 1997-05-21 | 三井東圧化学株式会社 | トリクロロシランの製造方法 |
| JP2613259B2 (ja) * | 1988-06-09 | 1997-05-21 | 三井東圧化学株式会社 | トリクロロシランの製造方法 |
| JPH01313318A (ja) * | 1988-06-10 | 1989-12-18 | Mitsui Toatsu Chem Inc | トリクロロシランの製造方法 |
| US4973725A (en) * | 1988-06-28 | 1990-11-27 | Union Carbide Chemicals And Plastics Company Inc. | Direct synthesis process for organohalohydrosilanes |
| US5051248A (en) * | 1990-08-15 | 1991-09-24 | Dow Corning Corporation | Silane products from reaction of silicon monoxide with hydrogen halides |
| CA2055304A1 (en) * | 1990-12-06 | 1992-06-07 | Roland L. Halm | Metal catalyzed production of tetrachlorosilanes |
| US5250716A (en) * | 1992-05-28 | 1993-10-05 | Mui Jeffrey Y P | Method for making a silicon/copper contact mass suitable for direct reaction |
| US5329038A (en) * | 1993-12-29 | 1994-07-12 | Dow Corning Corporation | Process for hydrogenation of chlorosilane |
| DE19654154A1 (de) * | 1995-12-25 | 1997-06-26 | Tokuyama Corp | Verfahren zur Herstellung von Trichlorsilan |
| JP3708649B2 (ja) * | 1995-12-25 | 2005-10-19 | 株式会社トクヤマ | 銅シリサイドを有する金属珪素粒子の製造方法 |
| JP3708648B2 (ja) * | 1995-12-25 | 2005-10-19 | 株式会社トクヤマ | トリクロロシランの製造方法 |
| KR100210261B1 (ko) * | 1997-03-13 | 1999-07-15 | 이서봉 | 발열반응을 이용한 다결정 실리콘의 제조 방법 |
| US6057469A (en) * | 1997-07-24 | 2000-05-02 | Pechiney Electrometallurgie | Process for manufacturing active silicon powder for the preparation of alkyl- or aryl-halosilanes |
| DE10045367A1 (de) * | 2000-09-14 | 2002-03-28 | Bayer Ag | Verfahren zur Herstellung von Trichlorsilan |
| DE10049963B4 (de) * | 2000-10-10 | 2009-04-09 | Evonik Degussa Gmbh | Verfahren zur Herstellung von Trichlorsilan |
-
2005
- 2005-03-09 CN CN2005800497460A patent/CN101189245B/zh active Active
- 2005-03-09 WO PCT/US2005/008204 patent/WO2006098722A1/en active Application Filing
- 2005-03-09 KR KR1020077023115A patent/KR101176088B1/ko not_active IP Right Cessation
- 2005-03-09 JP JP2008500692A patent/JP4813545B2/ja not_active Expired - Fee Related
- 2005-03-09 DE DE112005003497T patent/DE112005003497T5/de not_active Withdrawn
- 2005-03-09 EP EP05725398A patent/EP1861408A4/en not_active Withdrawn
-
2006
- 2006-03-09 TW TW095107967A patent/TWI454424B/zh active
-
2007
- 2007-11-23 NO NO20076030A patent/NO20076030L/no not_active Application Discontinuation
Also Published As
| Publication number | Publication date |
|---|---|
| TW200704589A (en) | 2007-02-01 |
| TWI454424B (zh) | 2014-10-01 |
| NO20076030L (no) | 2007-12-07 |
| KR20080008323A (ko) | 2008-01-23 |
| JP4813545B2 (ja) | 2011-11-09 |
| EP1861408A4 (en) | 2011-08-03 |
| EP1861408A1 (en) | 2007-12-05 |
| KR101176088B1 (ko) | 2012-08-22 |
| CN101189245B (zh) | 2012-06-13 |
| WO2006098722A1 (en) | 2006-09-21 |
| CN101189245A (zh) | 2008-05-28 |
| JP2008532907A (ja) | 2008-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE112005003497T5 (de) | Verfahren zur Herstellung von Hydrochlorsilanen | |
| DE3689628T2 (de) | Verfahren zur Herstellung von Alkylhalosilanen. | |
| DE60201354T2 (de) | Verfahren zur herstellung von polykristallinem silizium | |
| DE19740923B4 (de) | Verfahren zur Herstellung von Trichlorsilan | |
| DE3784151T2 (de) | Verfahren zur herstellung von alkylhalosilanen. | |
| DE19654154A1 (de) | Verfahren zur Herstellung von Trichlorsilan | |
| DE3782213T2 (de) | Verfahren zur enthalogenierung eines halogenids und katalysator hierfuer. | |
| DE102004019759A1 (de) | Verfahren zur Herstellung von HSiCI3 durch katalytische Hydrodehalogenierung von SiCI4 | |
| CN1154279A (zh) | 超细钴金属粉末、其制备方法以及钴金属粉末和碳酸钴的用途 | |
| DE2365273B2 (de) | Verfahren zur Hydrochlorierung von elementarem Silicium | |
| DE102004019760A1 (de) | Verfahren zur Herstellung von HSiCI3 durch katalytische Hydrodehalogenierung von SiCI4 | |
| DE10336545B3 (de) | Verfahren zur Herstellung von Chlorsilanen | |
| EP0810229A1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
| EP2467390B1 (de) | Katalysator zur hydrodechlorierung von chlorsilanen zu hydrogensilanen und verfahren zur darstellung von hydrogensilanen mit diesem katalysator | |
| DE10049963B4 (de) | Verfahren zur Herstellung von Trichlorsilan | |
| EP1903048A1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
| DE1279676B (de) | Verfahren zur Herstellung von Organohalogensilanen | |
| DE69907295T2 (de) | Verfahren zur Herstellung von Alkylhalogensilanen | |
| EP0759438B1 (de) | Verfahren zur Herstellung von Dimethyldichlorsilan | |
| DD240729A1 (de) | Verfahren zur gewinnung von hochreinem siliziumpulver | |
| DE1593083A1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
| DE1190442B (de) | Verfahren zur Herstellung eines Aluminiumoxydkatalysators bzw. eines Aluminiumoxydtraegers | |
| DE4312494A1 (de) | Verfahren zur Herstellung von Methylchlorsilanen | |
| DE2646129C3 (de) | Verfahren und Vorrichtung zur Herstellung von Vinylchlorid | |
| DE19828258B4 (de) | Verfahren zur Herstellung von Alkylhalogensilanen mit einer reaktivierten Kontaktmasse, die aus der Herstellung von Alkylhalogensilanen stammt |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8127 | New person/name/address of the applicant |
Owner name: REC SILICON, INC., MOSES LAKE, WASH., US |
|
| R005 | Application deemed withdrawn due to failure to request examination |
Effective date: 20120310 |