DE1105858B - Verfahren zur Herstellung von kubisch-kristallinem Borphosphid - Google Patents

Verfahren zur Herstellung von kubisch-kristallinem Borphosphid

Info

Publication number
DE1105858B
DE1105858B DEM45777A DEM0045777A DE1105858B DE 1105858 B DE1105858 B DE 1105858B DE M45777 A DEM45777 A DE M45777A DE M0045777 A DEM0045777 A DE M0045777A DE 1105858 B DE1105858 B DE 1105858B
Authority
DE
Germany
Prior art keywords
boron
boron phosphide
crystalline
phosphorus
phosphide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEM45777A
Other languages
German (de)
English (en)
Inventor
Bobbie Dean Stone
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Monsanto Chemicals Ltd
Original Assignee
Monsanto Chemicals Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Monsanto Chemicals Ltd filed Critical Monsanto Chemicals Ltd
Publication of DE1105858B publication Critical patent/DE1105858B/de
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/06—Hydrogen phosphides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
DEM45777A 1959-06-29 1960-06-29 Verfahren zur Herstellung von kubisch-kristallinem Borphosphid Pending DE1105858B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US823329A US3114605A (en) 1959-06-29 1959-06-29 Process for the production of boron phosphide

Publications (1)

Publication Number Publication Date
DE1105858B true DE1105858B (de) 1961-05-04

Family

ID=25238448

Family Applications (1)

Application Number Title Priority Date Filing Date
DEM45777A Pending DE1105858B (de) 1959-06-29 1960-06-29 Verfahren zur Herstellung von kubisch-kristallinem Borphosphid

Country Status (4)

Country Link
US (1) US3114605A (enExample)
DE (1) DE1105858B (enExample)
GB (1) GB942559A (enExample)
NL (1) NL253038A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1242580B (de) * 1963-10-28 1967-06-22 Philips Nv Verfahren zum Herstellen oder Umkristallisieren von Borphosphid

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT149652B (de) * 1932-12-21 1937-05-25 Ver Edelstahl Ag Verfahren zur Herstellung von Karbiden, Karbonitriden, Nitriden, Boriden, Siliziden und Titaniden, besonders für Hartlegierungen.
US2862787A (en) * 1953-05-27 1958-12-02 Paul F Seguin Process and apparatus for the preparation of semi-conductors from arsenides and phosphides and detectors formed therefrom

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1242580B (de) * 1963-10-28 1967-06-22 Philips Nv Verfahren zum Herstellen oder Umkristallisieren von Borphosphid

Also Published As

Publication number Publication date
GB942559A (en) 1963-11-27
NL253038A (enExample)
US3114605A (en) 1963-12-17

Similar Documents

Publication Publication Date Title
DE1042539B (de) Verfahren zum Herstellen ultrareiner Halbleiterkristalle
DE1132098B (de) Verfahren zur Herstellung von Phosphiden oder Arseniden der Elemente Bor, Aluminium,Gallium, Indium aus der ó¾. Gruppe des Periodischen Systems
DE1238105B (de) Verfahren zum Herstellen von pn-UEbergaengen in Silizium
AT149652B (de) Verfahren zur Herstellung von Karbiden, Karbonitriden, Nitriden, Boriden, Siliziden und Titaniden, besonders für Hartlegierungen.
DE3516589C2 (enExample)
DE1123300B (de) Verfahren zur Herstellung von Silicium oder Germanium
DE1105858B (de) Verfahren zur Herstellung von kubisch-kristallinem Borphosphid
DE2848452C3 (de) Verfahren zur Herstellung von hochreinem, borhaltigem β -Siliziumcarbid und dessen Verwendung zur Herstellung von Sinterkörpern
DE60316133T2 (de) Verfahren zur herstellung eines heizelements vom molybdänsilizid-typ
EP0403887B1 (de) Verfahren zum Herstellen von einkristallinem Siliziumkarbid
HK1042464A1 (zh) 生產單同位素硅si28的方法
US3088807A (en) Production of pure phosphorus
DE2461821A1 (de) Verfahren zur herstellung von hexagonalem bornitrid
DE1261842B (de) Verfahren zum Herstellen von hochreinem Silicium
DE1267198C2 (de) Verfahren zum Herstellen einer halbleitenden Verbindung
DE2540175C3 (de) Verfahren zur Herstellung von Galliumphosphid
DE1215665B (de) Verfahren zum Herstellen von hochreinem Siliziumkarbid
DE2215695B2 (de) Verfahren zur reindarstellung von metallen
DE1028543B (de) Verfahren zum Reinigen von mit Wasser Gel bildenden Halogeniden, insbesondere des Germaniums oder Siliciums, vorzugsweise fuer die Herstellung von Halbleiterstoffen
DE1181919B (de) Verfahren zur Herstellung von hochreinem Arsen
DE1123301B (de) Verfahren zum Herstellen der halbleitenden Elemente Silicium und Germanium
AT213846B (de) Verfahren zur Herstellung von kristallinem, sehr reinem Siliziumkarbid, insbesondere für Halbleiter
AT236446B (de) Verfahren zur Herstellung von monokristallinen Halbleiterkörpern aus Germanium
DE1109655B (de) Verfahren zur Herstellung von kristallinen Borarseniden der Zusammen-setzung B As bis B As oder BAs
DE1216853B (de) Verfahren zur Herstellung von Nitriden des Aluminiums oder Galliums