HK1042464A1 - 生產單同位素硅si28的方法 - Google Patents

生產單同位素硅si28的方法

Info

Publication number
HK1042464A1
HK1042464A1 HK02104291.6A HK02104291A HK1042464A1 HK 1042464 A1 HK1042464 A1 HK 1042464A1 HK 02104291 A HK02104291 A HK 02104291A HK 1042464 A1 HK1042464 A1 HK 1042464A1
Authority
HK
Hong Kong
Prior art keywords
monoisotopic
silicon
producing
producing monoisotopic
monoisotopic silicon
Prior art date
Application number
HK02104291.6A
Other languages
English (en)
Inventor
G‧G‧德夫亞特卡
A‧M‧普羅克霍羅夫
E‧M‧迪亞諾夫
A‧V‧古瑟夫
A‧D‧布蘭諾夫
P‧G‧賽尼科夫
H-J‧波爾
Original Assignee
俄羅斯科學院高純材料化學研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 俄羅斯科學院高純材料化學研究所 filed Critical 俄羅斯科學院高純材料化學研究所
Publication of HK1042464A1 publication Critical patent/HK1042464A1/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK02104291.6A 1999-10-07 2002-06-06 生產單同位素硅si28的方法 HK1042464A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99120835/12A RU2155158C1 (ru) 1999-10-07 1999-10-07 Способ получения моноизотопного кремния si28
PCT/RU2000/000401 WO2001025148A1 (fr) 1999-10-07 2000-10-04 Procede de fabrication de silicium si-28 a isotope unique

Publications (1)

Publication Number Publication Date
HK1042464A1 true HK1042464A1 (zh) 2002-08-16

Family

ID=20225436

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02104291.6A HK1042464A1 (zh) 1999-10-07 2002-06-06 生產單同位素硅si28的方法

Country Status (8)

Country Link
JP (1) JP2003511330A (zh)
KR (1) KR20010101102A (zh)
CN (1) CN1327434A (zh)
AU (1) AU1315701A (zh)
DE (1) DE10083318B4 (zh)
HK (1) HK1042464A1 (zh)
RU (1) RU2155158C1 (zh)
WO (1) WO2001025148A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO319447B1 (no) * 2002-07-05 2005-08-15 Scatec As Fremgangsmate for separasjon av isotoper
CN101937859B (zh) * 2010-08-11 2015-02-11 上海华虹宏力半导体制造有限公司 在ONO制造工艺中检测Cu含量的方法
CN102502648A (zh) * 2011-11-06 2012-06-20 云南省化工研究院 一种制备太阳能级多晶硅的方法
JP6408221B2 (ja) * 2014-01-24 2018-10-17 イビデン株式会社 原子炉用部材
CN105271238B (zh) * 2015-11-18 2017-10-20 浙江工业大学 一种利用机械化学法制备硅粉体的方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3050366A (en) * 1959-07-15 1962-08-21 Du Pont Production of silane by the use of a zinc catalyst
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
FR2462782A1 (fr) * 1979-08-03 1981-02-13 Thomson Csf Procede de realisation d'une couche contenant du silicium et dispositif de conversion photoelectrique mettant en oeuvre ce procede
US4374111A (en) * 1980-11-21 1983-02-15 Allied Corporation Production of silane
DE3409172A1 (de) * 1984-03-13 1985-09-26 D. Swarovski & Co., Wattens, Tirol Verfahren zur herstellung von silan
US4664938A (en) * 1985-05-06 1987-05-12 Phillips Petroleum Company Method for deposition of silicon
RU2036143C1 (ru) * 1992-02-27 1995-05-27 Акционерное общество открытого типа "Всероссийский алюминиево-магниевый институт" Способ восстановления кремния
RU2077483C1 (ru) * 1995-04-28 1997-04-20 Всероссийский научно-исследовательский институт химической технологии Способ получения моносилана
RU2116963C1 (ru) * 1997-06-06 1998-08-10 Институт физики полупроводников СО РАН Способ получения кремния
RU2137710C1 (ru) * 1998-09-03 1999-09-20 Петранин Николай Павлович Способ получения моноизотопного кремния

Also Published As

Publication number Publication date
RU2155158C1 (ru) 2000-08-27
JP2003511330A (ja) 2003-03-25
DE10083318T1 (de) 2002-04-25
KR20010101102A (ko) 2001-11-14
AU1315701A (en) 2001-05-10
WO2001025148A1 (fr) 2001-04-12
CN1327434A (zh) 2001-12-19
DE10083318B4 (de) 2006-10-26

Similar Documents

Publication Publication Date Title
EP1437327A4 (en) PROCESS FOR PREPARING SILICON
GB9903830D0 (en) Process-systems integration method
GB2350852B (en) Well operating method
ZA200105294B (en) Method for producing L-phenylephrine hydrochloride.
HK1052702A1 (en) Method for the preparation of 5-carboxyphthalide.
MXPA03002010A (es) Metodo para producir un epoxido.
HK1053106A1 (en) Method for producing bisphenols.
PL361146A1 (en) Method for producing isocyanato-organosilanes
HUP0102967A3 (en) Method for producing organosilylalkyl-polysulphanes
EP1460691A4 (en) METHOD FOR PRODUCING A CEMENTED WAFER
HK1042464A1 (zh) 生產單同位素硅si28的方法
MX234329B (es) Metodo para producir n-fosfonometilglicina.
HK1044780A1 (en) Method for producing cyclo-)asp-dphe-nmeval-arg-gly).
MX225445B (es) Metodo y produccion de n-fosfonometilglicina.
ZA200003020B (en) Method for producing platinum.
IL144264A0 (en) Process for producing quinolinecarbaldehyde
GB2363379B (en) Process for producing alpha-aminoketones
HK1054024A1 (en) Processes for producing tetrahydropyranyl-4-sulfonate and 4-aminotetrahydropyran compound.
HUP0301893A3 (en) Method for producing 2-chloro-5-chloromethyl-1,3-thiazole
HK1050700A1 (en) Method for producing polycarbonate.
MXPA03009684A (es) Procedimiento para la preparacion de 2-(5-(4-fluorofenil)-3- piridilmetilaminometil)-cromano.
IL146573A0 (en) Method for producing 2,2,4,4-tetra-substituted 1,3,5-cyclohexanetriones
AU1283001A (en) Method for producing alkylhalogenosilanes
AU7265900A (en) Method for producing otoplastics
IL147804A0 (en) Method for producing 4-cyano-2-aminomethylthiazol