HK1042464A1 - Method for producing monoisotopic silicon si -28. - Google Patents

Method for producing monoisotopic silicon si -28.

Info

Publication number
HK1042464A1
HK1042464A1 HK02104291.6A HK02104291A HK1042464A1 HK 1042464 A1 HK1042464 A1 HK 1042464A1 HK 02104291 A HK02104291 A HK 02104291A HK 1042464 A1 HK1042464 A1 HK 1042464A1
Authority
HK
Hong Kong
Prior art keywords
monoisotopic
silicon
producing
producing monoisotopic
monoisotopic silicon
Prior art date
Application number
HK02104291.6A
Other languages
Chinese (zh)
Inventor
G‧G‧德夫亞特卡
A‧M‧普羅克霍羅夫
E‧M‧迪亞諾夫
A‧V‧古瑟夫
A‧D‧布蘭諾夫
P‧G‧賽尼科夫
H-J‧波爾
Original Assignee
俄羅斯科學院高純材料化學研究所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 俄羅斯科學院高純材料化學研究所 filed Critical 俄羅斯科學院高純材料化學研究所
Publication of HK1042464A1 publication Critical patent/HK1042464A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
HK02104291.6A 1999-10-07 2002-06-06 Method for producing monoisotopic silicon si -28. HK1042464A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
RU99120835/12A RU2155158C1 (en) 1999-10-07 1999-10-07 METHOD OF PREPARING MONOISOTOPIC SILICON Si28
PCT/RU2000/000401 WO2001025148A1 (en) 1999-10-07 2000-10-04 Method for the production of single isotope silicon si-28

Publications (1)

Publication Number Publication Date
HK1042464A1 true HK1042464A1 (en) 2002-08-16

Family

ID=20225436

Family Applications (1)

Application Number Title Priority Date Filing Date
HK02104291.6A HK1042464A1 (en) 1999-10-07 2002-06-06 Method for producing monoisotopic silicon si -28.

Country Status (8)

Country Link
JP (1) JP2003511330A (en)
KR (1) KR20010101102A (en)
CN (1) CN1327434A (en)
AU (1) AU1315701A (en)
DE (1) DE10083318B4 (en)
HK (1) HK1042464A1 (en)
RU (1) RU2155158C1 (en)
WO (1) WO2001025148A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NO319447B1 (en) * 2002-07-05 2005-08-15 Scatec As Method for separation of isotopes
CN101937859B (en) * 2010-08-11 2015-02-11 上海华虹宏力半导体制造有限公司 Method for detecting Cu content in oxide-nitride-oxide (ONO) manufacturing process
CN102502648A (en) * 2011-11-06 2012-06-20 云南省化工研究院 Method for preparing solar grade polycrystalline silicon
JP6408221B2 (en) * 2014-01-24 2018-10-17 イビデン株式会社 Reactor components
CN105271238B (en) * 2015-11-18 2017-10-20 浙江工业大学 A kind of method that utilization mechanochemical reaction prepares silicon powder

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3050366A (en) * 1959-07-15 1962-08-21 Du Pont Production of silane by the use of a zinc catalyst
JPS53106626A (en) * 1977-03-02 1978-09-16 Komatsu Mfg Co Ltd Method of making high purity rod silicon and appratus therefor
FR2462782A1 (en) * 1979-08-03 1981-02-13 Thomson Csf PROCESS FOR PRODUCING A LAYER CONTAINING SILICON AND PHOTOELECTRIC CONVERSION DEVICE USING THE SAME
US4374111A (en) * 1980-11-21 1983-02-15 Allied Corporation Production of silane
DE3409172A1 (en) * 1984-03-13 1985-09-26 D. Swarovski & Co., Wattens, Tirol METHOD FOR PRODUCING SILANE
US4664938A (en) * 1985-05-06 1987-05-12 Phillips Petroleum Company Method for deposition of silicon
RU2036143C1 (en) * 1992-02-27 1995-05-27 Акционерное общество открытого типа "Всероссийский алюминиево-магниевый институт" Method for reducing silicon
RU2077483C1 (en) * 1995-04-28 1997-04-20 Всероссийский научно-исследовательский институт химической технологии Method of preparing monosilane
RU2116963C1 (en) * 1997-06-06 1998-08-10 Институт физики полупроводников СО РАН Silicon production process
RU2137710C1 (en) * 1998-09-03 1999-09-20 Петранин Николай Павлович Monoisotope silicon production process

Also Published As

Publication number Publication date
CN1327434A (en) 2001-12-19
KR20010101102A (en) 2001-11-14
RU2155158C1 (en) 2000-08-27
DE10083318B4 (en) 2006-10-26
AU1315701A (en) 2001-05-10
WO2001025148A1 (en) 2001-04-12
DE10083318T1 (en) 2002-04-25
JP2003511330A (en) 2003-03-25

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