DE1044769B - Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen Komponenten - Google Patents
Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen KomponentenInfo
- Publication number
- DE1044769B DE1044769B DES45307A DES0045307A DE1044769B DE 1044769 B DE1044769 B DE 1044769B DE S45307 A DES45307 A DE S45307A DE S0045307 A DES0045307 A DE S0045307A DE 1044769 B DE1044769 B DE 1044769B
- Authority
- DE
- Germany
- Prior art keywords
- melt
- compounds
- temperature
- volatile components
- crystals
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 150000001875 compounds Chemical class 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 title claims description 10
- 239000000155 melt Substances 0.000 title claims description 10
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 description 8
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- 239000012494 Quartz wool Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910020598 Co Fe Inorganic materials 0.000 description 1
- 229910002519 Co-Fe Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/20—Contact mechanisms of dynamic converters
- H02M1/26—Contact mechanisms of dynamic converters incorporating cam-operated contacts
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1064—Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1072—Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL103523D NL103523C (enrdf_load_stackoverflow) | 1955-08-26 | ||
| NL206524D NL206524A (enrdf_load_stackoverflow) | 1955-08-26 | ||
| DES45307A DE1044769B (de) | 1955-08-26 | 1955-08-26 | Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen Komponenten |
| FR1155185D FR1155185A (fr) | 1955-08-26 | 1956-07-10 | Appareil pour étirer des cristaux à partir d'une masse en fusion formée de composés comprenant des constituants très volatils |
| GB24554/56A GB818757A (en) | 1955-08-26 | 1956-08-10 | Improvements in or relating to apparatus for pulling crystals from melts of compounds having readily volatile components |
| US605609A US3074785A (en) | 1955-08-26 | 1956-08-22 | Apparatus for pulling crystals from molten compounds |
| CH3682156A CH373568A (de) | 1955-08-26 | 1956-08-24 | Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit mindestens einer leichtflüchtigen Komponente |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES45307A DE1044769B (de) | 1955-08-26 | 1955-08-26 | Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen Komponenten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1044769B true DE1044769B (de) | 1958-11-27 |
Family
ID=7485496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES45307A Pending DE1044769B (de) | 1955-08-26 | 1955-08-26 | Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen Komponenten |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US3074785A (enrdf_load_stackoverflow) |
| CH (1) | CH373568A (enrdf_load_stackoverflow) |
| DE (1) | DE1044769B (enrdf_load_stackoverflow) |
| FR (1) | FR1155185A (enrdf_load_stackoverflow) |
| GB (1) | GB818757A (enrdf_load_stackoverflow) |
| NL (2) | NL206524A (enrdf_load_stackoverflow) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077187B (de) * | 1958-11-13 | 1960-03-10 | Werk Fuer Bauelemente Der Nach | Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen |
| DE1233826B (de) * | 1961-11-23 | 1967-02-09 | Philips Nv | Verfahren und Vorrichtung zum Ziehen von Kristallen aus einer Schmelze |
| DE1259839B (de) * | 1964-07-01 | 1968-02-01 | Siemens Ag | Antrieb einer Halterung beim tiegelfreien Zonenschmelzen |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3202406A (en) * | 1960-07-27 | 1965-08-24 | Clevite Corp | Furnace apparatus and conveyor therefor |
| US3124633A (en) * | 1960-09-15 | 1964-03-10 | Certificate of correction | |
| NL275885A (enrdf_load_stackoverflow) * | 1961-03-14 | |||
| US3211881A (en) * | 1962-08-28 | 1965-10-12 | Westinghouse Electric Corp | Apparatus for zone heating |
| US3268297A (en) * | 1963-10-10 | 1966-08-23 | Albrecht G Fischer | Crystal pulling apparatus |
| GB1093774A (en) * | 1964-08-04 | 1967-12-06 | Nippon Electric Co | Improvements in or relating to crystal processing |
| US3844724A (en) * | 1971-12-27 | 1974-10-29 | Du Pont | Zone-melting apparatus |
| US3857679A (en) * | 1973-02-05 | 1974-12-31 | Univ Southern California | Crystal grower |
| JPS6144797A (ja) * | 1984-08-10 | 1986-03-04 | Toshiba Corp | 単結晶育成装置およびその制御方法 |
| DE3432467C1 (de) * | 1984-09-04 | 1986-03-27 | Kernforschungsanlage Jülich GmbH, 5170 Jülich | Stab- und Tiegelhalterung |
| ATE55424T1 (de) * | 1984-09-04 | 1990-08-15 | Forschungszentrum Juelich Gmbh | Verfahren zur herstellung eines kristallinen koerpers aus der schmelze. |
| US5196085A (en) * | 1990-12-28 | 1993-03-23 | Massachusetts Institute Of Technology | Active magnetic flow control in Czochralski systems |
| JP2005289776A (ja) * | 2004-04-05 | 2005-10-20 | Canon Inc | 結晶製造方法および結晶製造装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2206006A (en) * | 1937-10-06 | 1940-06-25 | Texas Co | Gauge cleaning device |
| US2763666A (en) * | 1951-03-20 | 1956-09-18 | Huillard Sa Ets | Method for the catalytic hydrogenation of furfural |
| US2768914A (en) * | 1951-06-29 | 1956-10-30 | Bell Telephone Labor Inc | Process for producing semiconductive crystals of uniform resistivity |
| US2851341A (en) * | 1953-07-08 | 1958-09-09 | Shirley I Weiss | Method and equipment for growing crystals |
| US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
| US2743200A (en) * | 1954-05-27 | 1956-04-24 | Bell Telephone Labor Inc | Method of forming junctions in silicon |
| US2750310A (en) * | 1954-07-17 | 1956-06-12 | Joachim I Franke | Manufacture process of doped germanium crystals |
-
0
- NL NL103523D patent/NL103523C/xx active
- NL NL206524D patent/NL206524A/xx unknown
-
1955
- 1955-08-26 DE DES45307A patent/DE1044769B/de active Pending
-
1956
- 1956-07-10 FR FR1155185D patent/FR1155185A/fr not_active Expired
- 1956-08-10 GB GB24554/56A patent/GB818757A/en not_active Expired
- 1956-08-22 US US605609A patent/US3074785A/en not_active Expired - Lifetime
- 1956-08-24 CH CH3682156A patent/CH373568A/de unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1077187B (de) * | 1958-11-13 | 1960-03-10 | Werk Fuer Bauelemente Der Nach | Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen |
| DE1233826B (de) * | 1961-11-23 | 1967-02-09 | Philips Nv | Verfahren und Vorrichtung zum Ziehen von Kristallen aus einer Schmelze |
| DE1259839B (de) * | 1964-07-01 | 1968-02-01 | Siemens Ag | Antrieb einer Halterung beim tiegelfreien Zonenschmelzen |
Also Published As
| Publication number | Publication date |
|---|---|
| CH373568A (de) | 1963-11-30 |
| GB818757A (en) | 1959-08-19 |
| US3074785A (en) | 1963-01-22 |
| NL206524A (enrdf_load_stackoverflow) | |
| FR1155185A (fr) | 1958-04-23 |
| NL103523C (enrdf_load_stackoverflow) |
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