CH373568A - Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit mindestens einer leichtflüchtigen Komponente - Google Patents

Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit mindestens einer leichtflüchtigen Komponente

Info

Publication number
CH373568A
CH373568A CH3682156A CH3682156A CH373568A CH 373568 A CH373568 A CH 373568A CH 3682156 A CH3682156 A CH 3682156A CH 3682156 A CH3682156 A CH 3682156A CH 373568 A CH373568 A CH 373568A
Authority
CH
Switzerland
Prior art keywords
melt
compounds
volatile component
highly volatile
pulling crystals
Prior art date
Application number
CH3682156A
Other languages
English (en)
Inventor
Rolf Dr Gremmelmaier
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH373568A publication Critical patent/CH373568A/de

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00Details of apparatus for conversion
    • H02M1/20Contact mechanisms of dynamic converters
    • H02M1/26Contact mechanisms of dynamic converters incorporating cam-operated contacts
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30Mechanisms for rotating or moving either the melt or the crystal
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/917Magnetic
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1064Seed pulling including a fully-sealed or vacuum-maintained crystallization chamber [e.g., ampoule]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1068Seed pulling including heating or cooling details [e.g., shield configuration]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10Apparatus
    • Y10T117/1024Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032Seed pulling
    • Y10T117/1072Seed pulling including details of means providing product movement [e.g., shaft guides, servo means]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH3682156A 1955-08-26 1956-08-24 Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit mindestens einer leichtflüchtigen Komponente CH373568A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES45307A DE1044769B (de) 1955-08-26 1955-08-26 Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit leichtfluechtigen Komponenten

Publications (1)

Publication Number Publication Date
CH373568A true CH373568A (de) 1963-11-30

Family

ID=7485496

Family Applications (1)

Application Number Title Priority Date Filing Date
CH3682156A CH373568A (de) 1955-08-26 1956-08-24 Einrichtung zum Ziehen von Kristallen aus der Schmelze von Verbindungen mit mindestens einer leichtflüchtigen Komponente

Country Status (6)

Country Link
US (1) US3074785A (de)
CH (1) CH373568A (de)
DE (1) DE1044769B (de)
FR (1) FR1155185A (de)
GB (1) GB818757A (de)
NL (2) NL103523C (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1077187B (de) * 1958-11-13 1960-03-10 Werk Fuer Bauelemente Der Nach Verfahren zur Herstellung von Einkristallen aus halbleitenden Stoffen
US3202406A (en) * 1960-07-27 1965-08-24 Clevite Corp Furnace apparatus and conveyor therefor
US3124633A (en) * 1960-09-15 1964-03-10 Certificate of correction
FR1317646A (de) * 1961-03-14 1963-05-08
BE625139A (de) * 1961-11-23
US3211881A (en) * 1962-08-28 1965-10-12 Westinghouse Electric Corp Apparatus for zone heating
US3268297A (en) * 1963-10-10 1966-08-23 Albrecht G Fischer Crystal pulling apparatus
GB1053684A (de) * 1964-07-01
GB1093774A (en) * 1964-08-04 1967-12-06 Nippon Electric Co Improvements in or relating to crystal processing
US3844724A (en) * 1971-12-27 1974-10-29 Du Pont Zone-melting apparatus
US3857679A (en) * 1973-02-05 1974-12-31 Univ Southern California Crystal grower
JPS6144797A (ja) * 1984-08-10 1986-03-04 Toshiba Corp 単結晶育成装置およびその制御方法
EP0174004B1 (de) * 1984-09-04 1990-08-08 Forschungszentrum Jülich Gmbh Verfahren zur Herstellung eines kristallinen Körpers aus der Schmelze
DE3432467C1 (de) * 1984-09-04 1986-03-27 Kernforschungsanlage Jülich GmbH, 5170 Jülich Stab- und Tiegelhalterung
US5196085A (en) * 1990-12-28 1993-03-23 Massachusetts Institute Of Technology Active magnetic flow control in Czochralski systems
JP2005289776A (ja) * 2004-04-05 2005-10-20 Canon Inc 結晶製造方法および結晶製造装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2206006A (en) * 1937-10-06 1940-06-25 Texas Co Gauge cleaning device
US2763666A (en) * 1951-03-20 1956-09-18 Huillard Sa Ets Method for the catalytic hydrogenation of furfural
US2768914A (en) * 1951-06-29 1956-10-30 Bell Telephone Labor Inc Process for producing semiconductive crystals of uniform resistivity
US2851341A (en) * 1953-07-08 1958-09-09 Shirley I Weiss Method and equipment for growing crystals
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon
US2743200A (en) * 1954-05-27 1956-04-24 Bell Telephone Labor Inc Method of forming junctions in silicon
US2750310A (en) * 1954-07-17 1956-06-12 Joachim I Franke Manufacture process of doped germanium crystals

Also Published As

Publication number Publication date
GB818757A (en) 1959-08-19
NL103523C (de)
NL206524A (de)
DE1044769B (de) 1958-11-27
US3074785A (en) 1963-01-22
FR1155185A (fr) 1958-04-23

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