CH386702A - Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze - Google Patents

Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze

Info

Publication number
CH386702A
CH386702A CH7918459A CH7918459A CH386702A CH 386702 A CH386702 A CH 386702A CH 7918459 A CH7918459 A CH 7918459A CH 7918459 A CH7918459 A CH 7918459A CH 386702 A CH386702 A CH 386702A
Authority
CH
Switzerland
Prior art keywords
melt
crystalline semiconductor
semiconductor rods
pulling
pulling crystalline
Prior art date
Application number
CH7918459A
Other languages
English (en)
Inventor
Kocher Hans-Heinrich
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH386702A publication Critical patent/CH386702A/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
    • H01L29/045—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes by their particular orientation of crystalline planes
CH7918459A 1958-10-15 1959-10-08 Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze CH386702A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES60264A DE1090868B (de) 1958-10-15 1958-10-15 Verfahren zum Ziehen von einkristallinen Halbleiterstaeben aus Schmelzen
DES73154A DE1207636B (de) 1958-10-15 1961-03-27 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium und/oder Germanium fuer Halbleiterbauelemente

Publications (1)

Publication Number Publication Date
CH386702A true CH386702A (de) 1965-01-15

Family

ID=43127708

Family Applications (2)

Application Number Title Priority Date Filing Date
CH7918459A CH386702A (de) 1958-10-15 1959-10-08 Verfahren zum Ziehen von kristallinen Halbleiterstäben aus der Schmelze
CH1454261A CH409886A (de) 1958-10-15 1961-12-14 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH1454261A CH409886A (de) 1958-10-15 1961-12-14 Verfahren zum Herstellen von Scheiben aus einkristallinem Silizium oder Germanium

Country Status (5)

Country Link
CH (2) CH386702A (de)
DE (2) DE1090868B (de)
FR (2) FR1235174A (de)
GB (2) GB898096A (de)
NL (1) NL274787A (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4121965A (en) * 1976-07-16 1978-10-24 The United States Of America As Represented By The Administrator Of The National Aeronautics & Space Administration Method of controlling defect orientation in silicon crystal ribbon growth
US4118197A (en) * 1977-01-24 1978-10-03 Mobil Tyco Solar Energy Corp. Cartridge and furnace for crystal growth
US4239734A (en) * 1978-07-13 1980-12-16 International Business Machines Corporation Method and apparatus for forming silicon crystalline bodies
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
JPH08298251A (ja) * 1995-02-28 1996-11-12 Shin Etsu Handotai Co Ltd 薄板の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH292927A (de) * 1950-01-13 1953-08-31 Western Electric Co Verfahren und Einrichtung zur Erzeugung von Halbleiterkristallen.

Also Published As

Publication number Publication date
FR1235174A (fr) 1960-10-26
FR81564E (fr) 1963-10-11
CH409886A (de) 1966-03-31
DE1207636B (de) 1965-12-23
GB898096A (en) 1962-06-06
NL274787A (de) 1964-09-25
GB938917A (en) 1963-10-09
DE1090868B (de) 1960-10-13

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