CH420071A - Verfahren zur Herstellung von Halbleiterstäben durch Ziehen aus der Schmelze - Google Patents

Verfahren zur Herstellung von Halbleiterstäben durch Ziehen aus der Schmelze

Info

Publication number
CH420071A
CH420071A CH1017563A CH1017563A CH420071A CH 420071 A CH420071 A CH 420071A CH 1017563 A CH1017563 A CH 1017563A CH 1017563 A CH1017563 A CH 1017563A CH 420071 A CH420071 A CH 420071A
Authority
CH
Switzerland
Prior art keywords
melt
production
semiconductor rods
rods
semiconductor
Prior art date
Application number
CH1017563A
Other languages
English (en)
Inventor
Wolfgang Dr Keller
Eberhard Dr Spenke
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH420071A publication Critical patent/CH420071A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
CH1017563A 1962-12-12 1963-08-16 Verfahren zur Herstellung von Halbleiterstäben durch Ziehen aus der Schmelze CH420071A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES82821A DE1243641B (de) 1962-12-12 1962-12-12 Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze

Publications (1)

Publication Number Publication Date
CH420071A true CH420071A (de) 1966-09-15

Family

ID=7510627

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1017563A CH420071A (de) 1962-12-12 1963-08-16 Verfahren zur Herstellung von Halbleiterstäben durch Ziehen aus der Schmelze

Country Status (5)

Country Link
US (1) US3261722A (de)
BE (1) BE641091A (de)
CH (1) CH420071A (de)
DE (1) DE1243641B (de)
GB (1) GB1059960A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3470039A (en) * 1966-12-21 1969-09-30 Texas Instruments Inc Continuous junction growth
DE1519908A1 (de) * 1966-12-30 1970-07-02 Siemens Ag Vorrichtung zum Herstellen eines kristallinen Stabes durch tiegelfreies Zonenschmelzen
US3607114A (en) * 1969-10-13 1971-09-21 Siemens Ag Apparatus for producing a monocrystalline rod, particularly of semiconductor material
US3776703A (en) * 1970-11-30 1973-12-04 Texas Instruments Inc Method of growing 1-0-0 orientation high perfection single crystal silicon by adjusting a focus coil
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4575401A (en) * 1984-06-07 1986-03-11 Wedtech Corp Method of and apparatus for the drawing of bars of monocrystalline silicon
US4548670A (en) * 1984-07-20 1985-10-22 Wedtech Corp. Silicon melting and evaporation method for high purity applications
US5958133A (en) * 1996-01-29 1999-09-28 General Signal Corporation Material handling system for growing high-purity crystals

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL180311B (nl) * 1952-08-01 Ciba Geigy Werkwijze voor het bereiden van n-halogeenacylanilinoalkaancarbonzuuresters alsmede werkwijze voor het bereiden van microbicide preparaten ter bestrijding van fytopathogene schimmels en bacterien op basis van dergelijke esters.
DE973231C (de) * 1953-01-20 1959-12-24 Telefunken Gmbh Verfahren zur Herstellung von Einkristallen durch Ziehen aus einer Schmelze
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
DE1017795B (de) * 1954-05-25 1957-10-17 Siemens Ag Verfahren zur Herstellung reinster kristalliner Substanzen, vorzugsweise Halbleitersubstanzen
BE542056A (de) * 1954-10-15
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2890139A (en) * 1956-12-10 1959-06-09 Shockley William Semi-conductive material purification method and apparatus
NL237834A (de) * 1958-04-09
US3084037A (en) * 1960-01-08 1963-04-02 Temescal Metallurgical Corp Gaseous ion purification process
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process

Also Published As

Publication number Publication date
BE641091A (de) 1964-06-11
US3261722A (en) 1966-07-19
GB1059960A (en) 1967-02-22
DE1243641B (de) 1967-07-06

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