BE542056A - - Google Patents

Info

Publication number
BE542056A
BE542056A BE542056DA BE542056A BE 542056 A BE542056 A BE 542056A BE 542056D A BE542056D A BE 542056DA BE 542056 A BE542056 A BE 542056A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE542056A publication Critical patent/BE542056A/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/905—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S164/00—Metal founding
    • Y10S164/04—Dental
BE542056D 1954-10-15 BE542056A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US462427A US2858199A (en) 1954-10-15 1954-10-15 Crystal production

Publications (1)

Publication Number Publication Date
BE542056A true BE542056A (de)

Family

ID=23836385

Family Applications (1)

Application Number Title Priority Date Filing Date
BE542056D BE542056A (de) 1954-10-15

Country Status (3)

Country Link
US (1) US2858199A (de)
BE (1) BE542056A (de)
GB (1) GB778123A (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1146203B (de) * 1958-01-17 1963-03-28 Philips Nv Verfahren zum Abtragen von Material von einem Halbleiterkoerper eines Halbleiter-bauelementes, z. B. eines Transistors oder einer Kristalldiode, durch Einwirkung eines strahlenfoermig aufgebrachten Abtragungsmittels

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2997760A (en) * 1957-06-10 1961-08-29 Stauffer Chemical Co Continous vaccum casting process
DE1110877B (de) * 1959-04-24 1961-07-13 Heraeus Gmbh W C Verfahren zum Erschmelzen von Metallbloecken mittels Elektronenstrahlen
US3115469A (en) * 1959-06-22 1963-12-24 Monsanto Chemicals Production of single crystals of ferrites
GB919298A (en) * 1960-08-22 1963-02-20 Ass Elect Ind Improvements relating to electronic beam furnaces
US3226248A (en) * 1962-03-14 1965-12-28 Texaco Experiment Inc Method of producing refractory monocrystalline boron structures
US3237254A (en) * 1962-06-26 1966-03-01 Stauffer Chemical Co Vacuum casting
DE1191054B (de) * 1962-09-08 1965-04-15 Balzers Vakuum G M B H Elektronenstrahlgeraet hoher Leistung
US3160497A (en) * 1962-11-15 1964-12-08 Loung Pai Yen Method of melting refractory metals using a double heating process
DE1243641B (de) * 1962-12-12 1967-07-06 Siemens Ag Verfahren zur Herstellung von Halbleiterstaeben durch Ziehen aus der Schmelze
DE1208739B (de) * 1963-12-17 1966-01-13 Ibm Deutschland Verfahren zum Ziehen von einkristallinem Siliziumkarbid
DE1218412B (de) * 1964-04-29 1966-06-08 Siemens Ag Verfahren zum Herstellen von einkristallinem Halbleitermaterial
GB1227331A (de) * 1967-04-14 1971-04-07
US3494804A (en) * 1968-07-15 1970-02-10 Air Reduction Method for growing crystals
US4650540A (en) * 1975-07-09 1987-03-17 Milton Stoll Methods and apparatus for producing coherent or monolithic elements
US4602979A (en) * 1982-10-15 1986-07-29 The United States Of America As Represented By The Secretary Of The Air Force Technique for the growth of compositionally ungraded single crystals of solid solutions
US4548670A (en) * 1984-07-20 1985-10-22 Wedtech Corp. Silicon melting and evaporation method for high purity applications

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2631356A (en) * 1953-03-17 Method of making p-n junctions
US1580199A (en) * 1924-09-02 1926-04-13 Hering Carl Process of making fibrous material
US2128581A (en) * 1936-05-18 1938-08-30 Farnsworth Television Inc Fine beam electron gun
IT380674A (de) * 1939-02-22
US2472303A (en) * 1946-06-10 1949-06-07 Brush Dev Co Method of growing crystals
US2468761A (en) * 1946-07-05 1949-05-03 Brush Dev Co Method of growing p-type seed crystals
US2647043A (en) * 1948-09-23 1953-07-28 Imber Oscar Crystal growing apparatus
BE500569A (de) * 1950-01-13
US2674520A (en) * 1950-04-11 1954-04-06 Clevite Corp Apparatus for growing single crystals of quartz
DE895474C (de) * 1951-09-08 1953-11-02 Licentia Gmbh Verfahren zum Schmelzen hochgereinigter Substanzen

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1146203B (de) * 1958-01-17 1963-03-28 Philips Nv Verfahren zum Abtragen von Material von einem Halbleiterkoerper eines Halbleiter-bauelementes, z. B. eines Transistors oder einer Kristalldiode, durch Einwirkung eines strahlenfoermig aufgebrachten Abtragungsmittels

Also Published As

Publication number Publication date
GB778123A (en) 1957-07-03
US2858199A (en) 1958-10-28

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