US2858199A - Crystal production - Google Patents
Crystal production Download PDFInfo
- Publication number
- US2858199A US2858199A US462427A US46242754A US2858199A US 2858199 A US2858199 A US 2858199A US 462427 A US462427 A US 462427A US 46242754 A US46242754 A US 46242754A US 2858199 A US2858199 A US 2858199A
- Authority
- US
- United States
- Prior art keywords
- block
- crystal
- crucible
- melted
- seed crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/905—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S164/00—Metal founding
- Y10S164/04—Dental
Definitions
- the present invention relates to crystal production, and more particularly to a method for manufacturing crystals which may be used as elements of transistors.
- meltted silicon in particular is of such high temperature that the usual crucibles are damaged or destroyed. No known crucible materials have yet been developed which will reliably withstand the high temperatures of molten silicon.
- An object of the present invention is to provide a method for producing crystals without the need of a crucible.
- Fig. 1 is a vertical sectional elevation of an embodiment of this invention
- Fig. 2 is a top plan View thereof
- Fig. 3 is a diagrammatic illustration of an electron gun used in the apparatus of Fig. 1;
- Fig. 4 is a perspective illustration showing one step of the method of drawing a crystal.
- the apparatus comprises an evacuated bell jar 1 which is hermetically sealed to a metallic base 2.
- a shaft or rod 3 is reciprocably mounted in the top portion of the bell jar by means of a suitable threaded connection with a hermetically sealed coupling 4.
- Suitable constructions for reciprocating the rod 3 from a position outside of the bell jar 1 are wellknown to the art and in particular are described in a publication entitled Vacuum Equipment and Techniques by Guthrie and Wakerling, published by the McGraw-Hill Book Company and copyrighted in 1949.
- a plurality of suitable electron guns 5 are circumferentially mounted on the top portion of the bell jar in 2,858,199 Patented Oct. 28, 1958 such a manner as to direct high density electron beams along the paths indicated by the dashed lines 6.
- These electron guns 5 may be of conventional construction and correspond to the electron gun arrangement disclosed in Gardner Patent 2,128,581.
- a suitable gun construction is diagrammatically illustrated in Fig. 3 wherein electrons emitted by a cathode 7 are concentrated into a pencil-like beam by an anode 8 and accelerated by both this anode 8 and another anode 9. As will become apparent from the following description, this pencil-like beam must be of high density.
- a block 10 of silicon, germanium, or the like material On the base 2 of the bell jar 1 is placed a block 10 of silicon, germanium, or the like material in such position that the central portion thereof will be bombarded by the respective electron beams 6.
- These beams 6 are of such high density as to melt the central portion of the block 10. The beams are so controlled that only the central portion of the block is melted, whereby the block serves as a crucible for the melted portion.
- a seed crystal of the type which is to be finally produced is clamped by some suitable means in the lower end of the reciprocable rod 3, and such a starter or seed crystal is indicated in Figs. 1 and 4 by the reference numeral 11.
- the rod 3 is lowered until the seed crystal 11 just touches the molten material, and is then withdrawn upwardly at a slow rate which will allow the molten material to continuously form on the lower end of the seed crystal.
- Continued withdrawal of the seed crystal thereby ostensibly draws or pulls a suitable crystal structure from the solid block.
- the beams 6 are trained onto the areas surrounding the drawn crystal, whereupon the operation may be continued until the block 10 is substantially consumed.
- the block 10 acquires an electrostatic charge from the electron beams 6, it is desirable to provide a conductive return path for current fiowfrom the base 10 to one of the gun anodes, such as the anode 9.
- a wire 12 is shown as providing this conductive path. While there has been shown a plurality of individual electron guns 5, it is possible to utilize a single electron gun of annular configuration which will produce a tapered, hollow electron beam for melting the block 10 in the vicinity surrounding the seed crystal 11.
- the method of fabricating crystals comprising born barding a portion of a block of material from which a crystal is to be made with electrons, said bombardment serving to melt said portion, said portion being disposed in one block surface inside the perimeter thereof, and drawing a seed crystal from said melted portion, the unmelted portion of said block serving as a crucible for the melted portion.
- the method of fabricating crystals comprising selective melting a central portion of a block of material from which a crystal is to be made, said portion being disposed in one surface between the lateral block sides, drawing a seed crystal from said melted portion, the unmelted portion of said block serving as a crucible for the melted portion, and continuing to melt said block in the perimetral vicinity of the crystal being drawn.
- the method of fabricating crystals from a block of material from which a crystal is to be made comprising positioning a self-supporting block of said material in an evacuated container focusing an electron beam on the upper surface of said block, increasing the energy in said beam until a pool of said material meltsv in said upper surface within the perimeter of said upper surface of the block whereby said block serve as a crucible for the pool of melted material, partly immersing in said pool a seed crystal of said material, and lifting the seed crystal from thepool at the rate of solidification ofthe material uplifted from the pool.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE542056D BE542056A (de) | 1954-10-15 | ||
US462427A US2858199A (en) | 1954-10-15 | 1954-10-15 | Crystal production |
GB29341/55A GB778123A (en) | 1954-10-15 | 1955-10-14 | Crystal production |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US462427A US2858199A (en) | 1954-10-15 | 1954-10-15 | Crystal production |
Publications (1)
Publication Number | Publication Date |
---|---|
US2858199A true US2858199A (en) | 1958-10-28 |
Family
ID=23836385
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US462427A Expired - Lifetime US2858199A (en) | 1954-10-15 | 1954-10-15 | Crystal production |
Country Status (3)
Country | Link |
---|---|
US (1) | US2858199A (de) |
BE (1) | BE542056A (de) |
GB (1) | GB778123A (de) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
US2997760A (en) * | 1957-06-10 | 1961-08-29 | Stauffer Chemical Co | Continous vaccum casting process |
US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
DE1191054B (de) * | 1962-09-08 | 1965-04-15 | Balzers Vakuum G M B H | Elektronenstrahlgeraet hoher Leistung |
US3219435A (en) * | 1959-04-24 | 1965-11-23 | Heraeus Gmbh W C | Method and apparatus for producing metal blocks by electron beams |
US3226248A (en) * | 1962-03-14 | 1965-12-28 | Texaco Experiment Inc | Method of producing refractory monocrystalline boron structures |
US3237254A (en) * | 1962-06-26 | 1966-03-01 | Stauffer Chemical Co | Vacuum casting |
US3261722A (en) * | 1962-12-12 | 1966-07-19 | Siemens Ag | Process for preparing semiconductor ingots within a depression |
US3278274A (en) * | 1963-12-17 | 1966-10-11 | Ibm | Method of pulling monocrystalline silicon carbide |
US3287107A (en) * | 1960-08-22 | 1966-11-22 | Ass Elect Ind | Electron beam furnaces |
US3360405A (en) * | 1964-04-29 | 1967-12-26 | Siemens Ag | Apparatus and method of producing semiconductor rods by pulling the same from a melt |
US3494804A (en) * | 1968-07-15 | 1970-02-10 | Air Reduction | Method for growing crystals |
US3634045A (en) * | 1967-04-14 | 1972-01-11 | Atomic Energy Authority Uk | Growing of crystals using electron beam heating and annealize |
US4602979A (en) * | 1982-10-15 | 1986-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Technique for the growth of compositionally ungraded single crystals of solid solutions |
US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL110575C (de) * | 1958-01-17 | 1965-02-15 | Philips Nv | |
US4548670A (en) * | 1984-07-20 | 1985-10-22 | Wedtech Corp. | Silicon melting and evaporation method for high purity applications |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1580199A (en) * | 1924-09-02 | 1926-04-13 | Hering Carl | Process of making fibrous material |
US2128581A (en) * | 1936-05-18 | 1938-08-30 | Farnsworth Television Inc | Fine beam electron gun |
US2423729A (en) * | 1939-02-22 | 1947-07-08 | Ruhle Rudolf | Vaporization of substances in a vacuum |
US2468761A (en) * | 1946-07-05 | 1949-05-03 | Brush Dev Co | Method of growing p-type seed crystals |
US2472303A (en) * | 1946-06-10 | 1949-06-07 | Brush Dev Co | Method of growing crystals |
US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
US2647043A (en) * | 1948-09-23 | 1953-07-28 | Imber Oscar | Crystal growing apparatus |
US2674520A (en) * | 1950-04-11 | 1954-04-06 | Clevite Corp | Apparatus for growing single crystals of quartz |
US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
FR1071730A (fr) * | 1951-09-08 | 1954-09-03 | Licentia Gmbh | Procédé pour la fusion de substances à haut degré de pureté |
-
0
- BE BE542056D patent/BE542056A/xx unknown
-
1954
- 1954-10-15 US US462427A patent/US2858199A/en not_active Expired - Lifetime
-
1955
- 1955-10-14 GB GB29341/55A patent/GB778123A/en not_active Expired
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
US1580199A (en) * | 1924-09-02 | 1926-04-13 | Hering Carl | Process of making fibrous material |
US2128581A (en) * | 1936-05-18 | 1938-08-30 | Farnsworth Television Inc | Fine beam electron gun |
US2423729A (en) * | 1939-02-22 | 1947-07-08 | Ruhle Rudolf | Vaporization of substances in a vacuum |
US2472303A (en) * | 1946-06-10 | 1949-06-07 | Brush Dev Co | Method of growing crystals |
US2468761A (en) * | 1946-07-05 | 1949-05-03 | Brush Dev Co | Method of growing p-type seed crystals |
US2647043A (en) * | 1948-09-23 | 1953-07-28 | Imber Oscar | Crystal growing apparatus |
US2683676A (en) * | 1950-01-13 | 1954-07-13 | Bell Telephone Labor Inc | Production of germanium rods having longitudinal crystal boundaries |
US2674520A (en) * | 1950-04-11 | 1954-04-06 | Clevite Corp | Apparatus for growing single crystals of quartz |
FR1071730A (fr) * | 1951-09-08 | 1954-09-03 | Licentia Gmbh | Procédé pour la fusion de substances à haut degré de pureté |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2979386A (en) * | 1956-08-02 | 1961-04-11 | Shockley William | Crystal growing apparatus |
US2997760A (en) * | 1957-06-10 | 1961-08-29 | Stauffer Chemical Co | Continous vaccum casting process |
US3219435A (en) * | 1959-04-24 | 1965-11-23 | Heraeus Gmbh W C | Method and apparatus for producing metal blocks by electron beams |
US3115469A (en) * | 1959-06-22 | 1963-12-24 | Monsanto Chemicals | Production of single crystals of ferrites |
US3287107A (en) * | 1960-08-22 | 1966-11-22 | Ass Elect Ind | Electron beam furnaces |
US3226248A (en) * | 1962-03-14 | 1965-12-28 | Texaco Experiment Inc | Method of producing refractory monocrystalline boron structures |
US3237254A (en) * | 1962-06-26 | 1966-03-01 | Stauffer Chemical Co | Vacuum casting |
DE1191054B (de) * | 1962-09-08 | 1965-04-15 | Balzers Vakuum G M B H | Elektronenstrahlgeraet hoher Leistung |
US3160497A (en) * | 1962-11-15 | 1964-12-08 | Loung Pai Yen | Method of melting refractory metals using a double heating process |
US3261722A (en) * | 1962-12-12 | 1966-07-19 | Siemens Ag | Process for preparing semiconductor ingots within a depression |
US3278274A (en) * | 1963-12-17 | 1966-10-11 | Ibm | Method of pulling monocrystalline silicon carbide |
US3360405A (en) * | 1964-04-29 | 1967-12-26 | Siemens Ag | Apparatus and method of producing semiconductor rods by pulling the same from a melt |
US3634045A (en) * | 1967-04-14 | 1972-01-11 | Atomic Energy Authority Uk | Growing of crystals using electron beam heating and annealize |
US3494804A (en) * | 1968-07-15 | 1970-02-10 | Air Reduction | Method for growing crystals |
US4650540A (en) * | 1975-07-09 | 1987-03-17 | Milton Stoll | Methods and apparatus for producing coherent or monolithic elements |
US4602979A (en) * | 1982-10-15 | 1986-07-29 | The United States Of America As Represented By The Secretary Of The Air Force | Technique for the growth of compositionally ungraded single crystals of solid solutions |
Also Published As
Publication number | Publication date |
---|---|
BE542056A (de) | |
GB778123A (en) | 1957-07-03 |
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