CH433205A - Verfahren zur Herstellung von Einkristallen aus Metalloxyden - Google Patents

Verfahren zur Herstellung von Einkristallen aus Metalloxyden

Info

Publication number
CH433205A
CH433205A CH1160662A CH1160662A CH433205A CH 433205 A CH433205 A CH 433205A CH 1160662 A CH1160662 A CH 1160662A CH 1160662 A CH1160662 A CH 1160662A CH 433205 A CH433205 A CH 433205A
Authority
CH
Switzerland
Prior art keywords
production
metal oxides
single crystals
crystals
oxides
Prior art date
Application number
CH1160662A
Other languages
English (en)
Inventor
Merker Leon
Original Assignee
Nat Lead Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Lead Co filed Critical Nat Lead Co
Publication of CH433205A publication Critical patent/CH433205A/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C30B11/10Solid or liquid components, e.g. Verneuil method
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/50Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds
    • C04B35/505Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on rare-earth compounds based on yttrium oxide
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • C30B29/26Complex oxides with formula BMe2O4, wherein B is Mg, Ni, Co, Al, Zn, or Cd and Me is Fe, Ga, Sc, Cr, Co, or Al
CH1160662A 1961-10-04 1962-10-03 Verfahren zur Herstellung von Einkristallen aus Metalloxyden CH433205A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14291261A 1961-10-04 1961-10-04
US14999761A 1961-11-03 1961-11-03

Publications (1)

Publication Number Publication Date
CH433205A true CH433205A (de) 1967-04-15

Family

ID=26840525

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1160662A CH433205A (de) 1961-10-04 1962-10-03 Verfahren zur Herstellung von Einkristallen aus Metalloxyden

Country Status (3)

Country Link
CH (1) CH433205A (de)
GB (2) GB969413A (de)
NL (1) NL283979A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211267A (en) * 1981-06-22 1982-12-25 Toshiba Corp Semiconductor device and manufacture thereof
US7616210B2 (en) 2005-08-23 2009-11-10 Canon Kabushiki Kaisha Memory apparatus and memory control method
JP7418098B2 (ja) * 2019-04-26 2024-01-19 キヤノン株式会社 光学多層膜の成膜方法および光学素子の製造方法
CN116283291B (zh) * 2023-03-20 2024-02-23 中国矿业大学(北京) 绝缘管制备方法

Also Published As

Publication number Publication date
GB968253A (en) 1964-09-02
GB969413A (en) 1964-09-09
NL283979A (de)

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