CH365545A - Verfahren zum Herstellen von Kristallen aus hochreinem Halbleitermaterial aus einer in einem Tiegel befindlichen Schmelze - Google Patents

Verfahren zum Herstellen von Kristallen aus hochreinem Halbleitermaterial aus einer in einem Tiegel befindlichen Schmelze

Info

Publication number
CH365545A
CH365545A CH5800158A CH5800158A CH365545A CH 365545 A CH365545 A CH 365545A CH 5800158 A CH5800158 A CH 5800158A CH 5800158 A CH5800158 A CH 5800158A CH 365545 A CH365545 A CH 365545A
Authority
CH
Switzerland
Prior art keywords
crucible
melt
semiconductor material
highly pure
producing crystals
Prior art date
Application number
CH5800158A
Other languages
English (en)
Inventor
Theodor Dr Rummel
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH365545A publication Critical patent/CH365545A/de

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/02—Induction heating
    • H05B6/22—Furnaces without an endless core
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/003—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals by induction
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B9/00—General processes of refining or remelting of metals; Apparatus for electroslag or arc remelting of metals
    • C22B9/16—Remelting metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00—Technologies related to metal processing
    • Y02P10/25—Process efficiency
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]
CH5800158A 1957-04-15 1958-04-08 Verfahren zum Herstellen von Kristallen aus hochreinem Halbleitermaterial aus einer in einem Tiegel befindlichen Schmelze CH365545A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES53137A DE1159903B (de) 1957-04-15 1957-04-15 Vorrichtung zum Schmelzen von reinstem Silizium und anderen reinen Halbleiterstoffen

Publications (1)

Publication Number Publication Date
CH365545A true CH365545A (de) 1962-11-15

Family

ID=7489101

Family Applications (1)

Application Number Title Priority Date Filing Date
CH5800158A CH365545A (de) 1957-04-15 1958-04-08 Verfahren zum Herstellen von Kristallen aus hochreinem Halbleitermaterial aus einer in einem Tiegel befindlichen Schmelze

Country Status (6)

Country Link
US (1) US3051555A (de)
CH (1) CH365545A (de)
DE (1) DE1159903B (de)
FR (1) FR1203822A (de)
GB (1) GB840135A (de)
NL (2) NL226823A (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3404966A (en) * 1964-09-04 1968-10-08 Northeru Electric Company Ltd Melting a ferrous ion containing ferrimagnetic oxide in a ferric ion crucible
US3433602A (en) * 1966-01-29 1969-03-18 Sharp Kk Method for growing single crystals
FR1492063A (fr) * 1966-04-05 1967-08-18 Commissariat Energie Atomique Perfectionnement aux fours électriques haute fréquence pour la fabrication en continu de réfractaires électrofondus
US3437734A (en) * 1966-06-21 1969-04-08 Isofilm Intern Apparatus and method for effecting the restructuring of materials
US3911994A (en) * 1974-11-08 1975-10-14 Reynolds Metals Co Utilization of silicon fines in casting
DE2508803C3 (de) * 1975-02-28 1982-07-08 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur
US4054641A (en) * 1976-05-07 1977-10-18 John S. Pennish Method for making vitreous silica
US4224100A (en) * 1978-06-16 1980-09-23 Litton Systems, Inc. Method and apparatus for making crystals
US4390379A (en) * 1981-06-25 1983-06-28 Western Electric Company, Inc. Elimination of edge growth in liquid phase epitaxy
US4412502A (en) * 1981-06-25 1983-11-01 Western Electric Co., Inc. Apparatus for the elimination of edge growth in liquid phase epitaxy
JPH04331792A (ja) * 1991-04-30 1992-11-19 Osaka Titanium Co Ltd シリコン単結晶製造方法
US6126742A (en) * 1996-09-20 2000-10-03 Forshungszentrum Karlsruhe Gmbh Method of drawing single crystals
DE19638563C2 (de) * 1996-09-20 1999-07-08 Karlsruhe Forschzent Verfahren zum Ziehen von Einkristallen
US6385230B1 (en) 2001-03-14 2002-05-07 Floswerve Manage Company Homogeneous electrode of a reactive metal alloy for vacuum arc remelting and a method for making the same from a plurality of induction melted charges
US9982334B2 (en) * 2012-02-01 2018-05-29 Jx Nippon Mining & Metals Corporation Polycrystalline silicon sputtering target

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US589221A (en) * 1897-08-31 Paul emile placet
DE38055C (de) * J. H. CAMPBELL in New-York, V. St. A Absorptions-Dampfmaschine
GB191214020A (de) * 1911-06-26
DE903266C (de) * 1941-04-05 1954-02-04 Aeg Elektrischer Induktionsofen zum Schmelzen von Magnesium und seinen Legierungen
US2354876A (en) * 1941-05-20 1944-08-01 Owens Calvin Arthur Method of treating cementitious objects
NL107897C (de) * 1953-05-18
US2858586A (en) * 1954-01-28 1958-11-04 Joseph B Brennan Smelting apparatus and method
US2793103A (en) * 1954-02-24 1957-05-21 Siemens Ag Method for producing rod-shaped bodies of crystalline material
US2817509A (en) * 1954-08-19 1957-12-24 Electro Refractories & Abrasiv Lined crucibles
US2872299A (en) * 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
US2836412A (en) * 1955-08-22 1958-05-27 Titanium Metals Corp Arc melting crucible
US2818248A (en) * 1955-09-12 1957-12-31 Paul S Kelsey Refractory block and ladle lining construction
US2941867A (en) * 1957-10-14 1960-06-21 Du Pont Reduction of metal halides

Also Published As

Publication number Publication date
DE1159903B (de) 1963-12-27
GB840135A (en) 1960-07-06
FR1203822A (fr) 1960-01-21
US3051555A (en) 1962-08-28
NL226823A (de) 1900-01-01
NL112552C (de) 1900-01-01

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