AT249116B - Verfahren zum Ziehen von einkristallinem Halbleitermaterial - Google Patents
Verfahren zum Ziehen von einkristallinem HalbleitermaterialInfo
- Publication number
- AT249116B AT249116B AT1038464A AT1038464A AT249116B AT 249116 B AT249116 B AT 249116B AT 1038464 A AT1038464 A AT 1038464A AT 1038464 A AT1038464 A AT 1038464A AT 249116 B AT249116 B AT 249116B
- Authority
- AT
- Austria
- Prior art keywords
- single crystal
- semiconductor material
- crystal semiconductor
- pulling single
- pulling
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C30B15/16—Heating of the melt or the crystallised materials by irradiation or electric discharge
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B9/00—Single-crystal growth from melt solutions using molten solvents
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/90—Apparatus characterized by composition or treatment thereof, e.g. surface finish, surface coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/903—Dendrite or web or cage technique
- Y10S117/904—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/905—Electron beam
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DEJ24946A DE1208739B (de) | 1963-12-17 | 1963-12-17 | Verfahren zum Ziehen von einkristallinem Siliziumkarbid |
Publications (1)
Publication Number | Publication Date |
---|---|
AT249116B true AT249116B (de) | 1966-09-12 |
Family
ID=7202008
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT1038464A AT249116B (de) | 1963-12-17 | 1964-12-07 | Verfahren zum Ziehen von einkristallinem Halbleitermaterial |
Country Status (4)
Country | Link |
---|---|
US (1) | US3278274A (de) |
AT (1) | AT249116B (de) |
DE (1) | DE1208739B (de) |
GB (1) | GB1031136A (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1264399B (de) * | 1965-06-10 | 1968-03-28 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen |
US3607139A (en) * | 1968-05-02 | 1971-09-21 | Air Reduction | Single crystal growth and diameter control by magnetic melt agitation |
US3897590A (en) * | 1968-05-18 | 1975-07-29 | Battelle Development Corp | Method and apparatus for making monocrystals |
US3494804A (en) * | 1968-07-15 | 1970-02-10 | Air Reduction | Method for growing crystals |
US3943324A (en) * | 1970-12-14 | 1976-03-09 | Arthur D. Little, Inc. | Apparatus for forming refractory tubing |
US4012213A (en) * | 1973-06-14 | 1977-03-15 | Arthur D. Little, Inc. | Apparatus for forming refractory fibers |
US4349407A (en) * | 1979-05-09 | 1982-09-14 | The United States Of America As Represented By The United States Department Of Energy | Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent |
US4971650A (en) * | 1989-09-22 | 1990-11-20 | Westinghouse Electric Corp. | Method of inhibiting dislocation generation in silicon dendritic webs |
JP4450075B2 (ja) * | 2008-01-15 | 2010-04-14 | トヨタ自動車株式会社 | 炭化珪素単結晶の成長方法 |
JP6129065B2 (ja) * | 2013-12-06 | 2017-05-17 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
JP6129064B2 (ja) * | 2013-12-06 | 2017-05-17 | 信越化学工業株式会社 | 炭化珪素の結晶成長方法 |
PL2881498T3 (pl) * | 2013-12-06 | 2020-06-15 | Shin-Etsu Chemical Co., Ltd. | Sposób hodowli kryształu węgliku krzemu |
JP6533716B2 (ja) | 2015-08-06 | 2019-06-19 | 信越化学工業株式会社 | SiC単結晶の製造方法 |
CN106482514A (zh) * | 2016-12-09 | 2017-03-08 | 永平县泰达废渣开发利用有限公司 | 一种基于电子束枪的感应炉熔硅起炉装置及工艺 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE542056A (de) * | 1954-10-15 | |||
US2968723A (en) * | 1957-04-11 | 1961-01-17 | Zeiss Carl | Means for controlling crystal structure of materials |
US3053635A (en) * | 1960-09-26 | 1962-09-11 | Clevite Corp | Method of growing silicon carbide crystals |
-
1963
- 1963-12-17 DE DEJ24946A patent/DE1208739B/de active Pending
-
1964
- 1964-11-13 US US411067A patent/US3278274A/en not_active Expired - Lifetime
- 1964-12-04 GB GB48622/64A patent/GB1031136A/en not_active Expired
- 1964-12-07 AT AT1038464A patent/AT249116B/de active
Also Published As
Publication number | Publication date |
---|---|
US3278274A (en) | 1966-10-11 |
DE1208739B (de) | 1966-01-13 |
GB1031136A (en) | 1966-05-25 |
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