CH457371A - Verfahren zum Herstellen von hochreinem Silizium - Google Patents

Verfahren zum Herstellen von hochreinem Silizium

Info

Publication number
CH457371A
CH457371A CH1619865A CH1619865A CH457371A CH 457371 A CH457371 A CH 457371A CH 1619865 A CH1619865 A CH 1619865A CH 1619865 A CH1619865 A CH 1619865A CH 457371 A CH457371 A CH 457371A
Authority
CH
Switzerland
Prior art keywords
producing high
purity silicon
purity
silicon
producing
Prior art date
Application number
CH1619865A
Other languages
English (en)
Inventor
Reuschel Konrad Dr Dipl-Chem
Schink Norbert Dr Dipl-Chem
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH457371A publication Critical patent/CH457371A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/06—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt at least one but not all components of the crystal composition being added
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/016—Catalyst
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/049—Equivalence and options
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/06—Gettering
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/097—Lattice strain and defects
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/107—Melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/13—Purification

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CH1619865A 1964-12-12 1965-11-24 Verfahren zum Herstellen von hochreinem Silizium CH457371A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES94592A DE1261842B (de) 1964-12-12 1964-12-12 Verfahren zum Herstellen von hochreinem Silicium

Publications (1)

Publication Number Publication Date
CH457371A true CH457371A (de) 1968-06-15

Family

ID=7518791

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1619865A CH457371A (de) 1964-12-12 1965-11-24 Verfahren zum Herstellen von hochreinem Silizium

Country Status (6)

Country Link
US (1) US3446653A (de)
BE (1) BE673576A (de)
CH (1) CH457371A (de)
DE (1) DE1261842B (de)
FR (1) FR1456437A (de)
GB (1) GB1078216A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2508802A1 (de) * 1975-02-28 1976-09-09 Siemens Ag Verfahren zum abscheiden von elementarem silicium
US4312848A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Boron removal in silicon purification
JPH0729874B2 (ja) * 1989-11-04 1995-04-05 コマツ電子金属株式会社 多結晶シリコン製造装置の芯線間接続用ブリッジ
US7673656B2 (en) * 2003-10-15 2010-03-09 Standard Textile Co., Inc. Woven terry fabric with non-moisture-transporting synthetic filament yarns

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3173765A (en) * 1955-03-18 1965-03-16 Itt Method of making crystalline silicon semiconductor material
NL105573C (de) * 1955-08-25
DE1419717A1 (de) * 1960-12-06 1968-10-17 Siemens Ag Monokristalliner Halbleiterkoerper und Verfahren zur Herstellung desselben
DE1254607B (de) * 1960-12-08 1967-11-23 Siemens Ag Verfahren zum Herstellen von einkristallinen Halbleiterkoerpoern aus der Gasphase
US3129061A (en) * 1961-03-27 1964-04-14 Westinghouse Electric Corp Process for producing an elongated unitary body of semiconductor material crystallizing in the diamond cubic lattice structure and the product so produced
US3243323A (en) * 1962-06-11 1966-03-29 Motorola Inc Gas etching

Also Published As

Publication number Publication date
DE1261842B (de) 1968-02-29
FR1456437A (fr) 1966-10-21
US3446653A (en) 1969-05-27
BE673576A (de) 1966-06-10
GB1078216A (en) 1967-08-09

Similar Documents

Publication Publication Date Title
CH444646A (de) Verfahren zum Herstellen von geklärten Säften
AT275569B (de) Verfahren zum Herstellen von Druckformen
CH498493A (de) Verfahren zum Herstellen monolithischer Halbleiteranordnungen
AT251651B (de) Verfahren zum Ätzen von Siliziumkarbid
CH433191A (de) Verfahren zum Herstellen von einkristallinem Halbleitermaterial
AT258363B (de) Verfahren zum Serienfertigen von Halbleiterbauelementen
CH484198A (de) Verfahren zum Reduzieren von substituierten Silanen
CH457371A (de) Verfahren zum Herstellen von hochreinem Silizium
CH468157A (de) Verfahren zum Herstellen von Präparaten mit Rindfleischgeschmack
DE1911335B2 (de) Verfahren zum herstellen von volumeneffekt halbleiter bauelementen
CH477024A (de) Verfahren zum Herstellen von Druckformen
AT295557B (de) Verfahren zum Herstellen von Druckformen
AT254756B (de) Verfahren zum Herstellen von Porenbeton
AT256477B (de) Verfahren zum Herstellen von schaumförmigen Polyamiden
CH470411A (de) Verfahren zum Herstellen von Thiaminderivaten
CH470201A (de) Verfahren zum Herstellen von Kristallen
AT244078B (de) Verfahren zum Herstellen von Magnetogrammträgern
AT250929B (de) Verfahren zum Herstellen von Lactamen
AT273397B (de) Verfahren zum Herstellen von Scheibenglas
AT266399B (de) Verfahren zum Herstellen von Wandausbrüchen
CH421060A (de) Verfahren zum Herstellen von streifenfreien Festkörpern
CH454624A (de) Verfahren zum Herstellen photoleitender Gemische
CH454066A (de) Verfahren zum Abbau von B-Glucanen
CH414671A (de) Verfahren zum Herstellen von Methanen
AT265661B (de) Verfahren zum Herstellen von Schaumstoffen