CH421060A - Verfahren zum Herstellen von streifenfreien Festkörpern - Google Patents
Verfahren zum Herstellen von streifenfreien FestkörpernInfo
- Publication number
- CH421060A CH421060A CH1071764A CH1071764A CH421060A CH 421060 A CH421060 A CH 421060A CH 1071764 A CH1071764 A CH 1071764A CH 1071764 A CH1071764 A CH 1071764A CH 421060 A CH421060 A CH 421060A
- Authority
- CH
- Switzerland
- Prior art keywords
- streak
- production
- free solids
- solids
- free
- Prior art date
Links
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/02—Unidirectional solidification of eutectic materials by normal casting or gradient freezing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/28—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B21/00—Unidirectional solidification of eutectic materials
- C30B21/04—Unidirectional solidification of eutectic materials by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DES86783A DE1217926B (de) | 1963-08-17 | 1963-08-17 | Verfahren zum Vermeiden von Streifen in Metall- oder Halbleiterkristallen |
Publications (1)
Publication Number | Publication Date |
---|---|
CH421060A true CH421060A (de) | 1966-09-30 |
Family
ID=7513266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1071764A CH421060A (de) | 1963-08-17 | 1964-08-17 | Verfahren zum Herstellen von streifenfreien Festkörpern |
Country Status (6)
Country | Link |
---|---|
US (1) | US3410665A (de) |
BE (1) | BE651855A (de) |
CH (1) | CH421060A (de) |
DE (1) | DE1217926B (de) |
GB (1) | GB1075148A (de) |
NL (1) | NL6409287A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1598493A (de) * | 1968-12-18 | 1970-07-06 | ||
US3622399A (en) * | 1968-12-31 | 1971-11-23 | Texas Instruments Inc | Method for preparing single crystal pseudobinary alloys |
JPS6041033B2 (ja) * | 1982-06-24 | 1985-09-13 | 財団法人 半導体研究振興会 | 結晶成長装置 |
US4853066A (en) * | 1986-10-31 | 1989-08-01 | Furukawa Electric Co., Ltd. | Method for growing compound semiconductor crystal |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2679080A (en) * | 1949-12-30 | 1954-05-25 | Bell Telephone Labor Inc | Production of single crystals of germanium |
DE1061527B (de) * | 1953-02-14 | 1959-07-16 | Siemens Ag | Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken |
US2889240A (en) * | 1956-03-01 | 1959-06-02 | Rca Corp | Method and apparatus for growing semi-conductive single crystals from a melt |
NL104388C (de) * | 1956-11-28 | |||
NL237834A (de) * | 1958-04-09 | |||
NL238924A (de) * | 1959-05-05 | |||
US3240568A (en) * | 1961-12-20 | 1966-03-15 | Monsanto Co | Process and apparatus for the production of single crystal compounds |
US3291571A (en) * | 1963-12-23 | 1966-12-13 | Gen Motors Corp | Crystal growth |
US3265469A (en) * | 1964-09-21 | 1966-08-09 | Gen Electric | Crystal growing apparatus |
-
1963
- 1963-08-17 DE DES86783A patent/DE1217926B/de active Pending
-
1964
- 1964-08-12 NL NL6409287A patent/NL6409287A/xx unknown
- 1964-08-14 GB GB33392/64A patent/GB1075148A/en not_active Expired
- 1964-08-14 US US389537A patent/US3410665A/en not_active Expired - Lifetime
- 1964-08-14 BE BE651855D patent/BE651855A/xx unknown
- 1964-08-17 CH CH1071764A patent/CH421060A/de unknown
Also Published As
Publication number | Publication date |
---|---|
GB1075148A (en) | 1967-07-12 |
NL6409287A (de) | 1965-02-18 |
US3410665A (en) | 1968-11-12 |
BE651855A (de) | 1964-12-01 |
DE1217926B (de) | 1966-06-02 |
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