AT261675B - Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen - Google Patents

Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen

Info

Publication number
AT261675B
AT261675B AT1097264A AT1097264A AT261675B AT 261675 B AT261675 B AT 261675B AT 1097264 A AT1097264 A AT 1097264A AT 1097264 A AT1097264 A AT 1097264A AT 261675 B AT261675 B AT 261675B
Authority
AT
Austria
Prior art keywords
epitaxial growth
single crystals
semiconductor single
semiconductor
crystals
Prior art date
Application number
AT1097264A
Other languages
English (en)
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of AT261675B publication Critical patent/AT261675B/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B41/00—Obtaining germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT1097264A 1963-12-31 1964-12-28 Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen AT261675B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US334859A US3297501A (en) 1963-12-31 1963-12-31 Process for epitaxial growth of semiconductor single crystals

Publications (1)

Publication Number Publication Date
AT261675B true AT261675B (de) 1968-05-10

Family

ID=23309173

Family Applications (1)

Application Number Title Priority Date Filing Date
AT1097264A AT261675B (de) 1963-12-31 1964-12-28 Verfahren zum epitaktischen Aufwachsen von Halbleitereinkristallen

Country Status (5)

Country Link
US (1) US3297501A (de)
AT (1) AT261675B (de)
DE (1) DE1282613B (de)
FR (1) FR1419209A (de)
GB (1) GB1056919A (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1458474A1 (de) * 1963-12-21 1968-12-19 Siemens Ag Verfahren zur Darstellung von intermetallischen supraleitenden Verbindungen
US3502516A (en) * 1964-11-06 1970-03-24 Siemens Ag Method for producing pure semiconductor material for electronic purposes
DE1544259A1 (de) * 1965-02-05 1970-07-09 Siemens Ag Verfahren zum Herstellen von gleichmaessigen epitaktischen Aufwachsschichten
US3338761A (en) * 1965-03-31 1967-08-29 Texas Instruments Inc Method and apparatus for making compound materials
US3635771A (en) * 1968-05-21 1972-01-18 Texas Instruments Inc Method of depositing semiconductor material
US3517643A (en) * 1968-11-25 1970-06-30 Sylvania Electric Prod Vapor deposition apparatus including diffuser means
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
JPS6047202B2 (ja) * 1976-01-13 1985-10-21 東北大学金属材料研究所長 超硬高純度の配向多結晶質窒化珪素
JPS55167041A (en) * 1979-06-14 1980-12-26 Toshiba Corp Vertical type gaseous phase growth device
JPS59156996A (ja) * 1983-02-23 1984-09-06 Koito Mfg Co Ltd 化合物結晶膜の製造方法とその装置
US4949671A (en) * 1985-10-24 1990-08-21 Texas Instruments Incorporated Processing apparatus and method
US5160543A (en) * 1985-12-20 1992-11-03 Canon Kabushiki Kaisha Device for forming a deposited film
US5391232A (en) * 1985-12-26 1995-02-21 Canon Kabushiki Kaisha Device for forming a deposited film
US4854266A (en) * 1987-11-02 1989-08-08 Btu Engineering Corporation Cross-flow diffusion furnace
JPH02222134A (ja) * 1989-02-23 1990-09-04 Nobuo Mikoshiba 薄膜形成装置
US6527865B1 (en) * 1997-09-11 2003-03-04 Applied Materials, Inc. Temperature controlled gas feedthrough
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US7112541B2 (en) * 2004-05-06 2006-09-26 Applied Materials, Inc. In-situ oxide capping after CVD low k deposition
WO2006020424A2 (en) * 2004-08-02 2006-02-23 Veeco Instruments Inc. Multi-gas distribution injector for chemical vapor deposition reactors
US7273823B2 (en) * 2005-06-03 2007-09-25 Applied Materials, Inc. Situ oxide cap layer development
US8741062B2 (en) * 2008-04-22 2014-06-03 Picosun Oy Apparatus and methods for deposition reactors

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE509317A (de) * 1951-03-07 1900-01-01
US2767052A (en) * 1952-06-26 1956-10-16 Eagle Picher Co Recovery of germanium from scrap materials
US2763581A (en) * 1952-11-25 1956-09-18 Raytheon Mfg Co Process of making p-n junction crystals
DE1054436B (de) * 1956-02-11 1959-04-09 Pechiney Prod Chimiques Sa Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
DE1048638B (de) * 1957-07-02 1959-01-15 Siemens &. Halske Aktiengesellschaft, Berlin und München Verfahren zur Herstellung von Halbleitereinkristallen, insbesondere von Silizium durch thermische Zersetzung oder Reduktion
US3020129A (en) * 1958-07-25 1962-02-06 Gen Electric Production of silicon of improved purity
US3068066A (en) * 1959-03-10 1962-12-11 Ciba Ltd Process for the manufacture of double salts of niobium chloride and tantalum chloride
US3009834A (en) * 1959-10-29 1961-11-21 Jacques M Hanlet Process of forming an electroluminescent article and the resulting article

Also Published As

Publication number Publication date
FR1419209A (fr) 1965-11-26
US3297501A (en) 1967-01-10
DE1282613B (de) 1968-11-14
GB1056919A (en) 1967-02-01

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